Extract from the Register of European Patents

EP About this file: EP0144223

EP0144223 - Semiconductor memory device [Right-click to bookmark this link]
StatusNo opposition filed within time limit
Status updated on  16.02.1991
Database last updated on 11.04.2026
Most recent event   Tooltip16.02.1991No opposition filed within time limitpublished on 10.04.1991 [1991/15]
Applicant(s)For all designated states
FUJITSU LIMITED
1015, Kamikodanaka, Nakahara-ku Kawasaki-shi
Kanagawa 211 / JP
[N/P]
Former [1985/24]For all designated states
FUJITSU LIMITED
1015, Kamikodanaka, Nakahara-ku
Kawasaki-shi, Kanagawa 211 / JP
Inventor(s)01 / Baba, Fumio
48-303, Miyamaedaira Gurin Haitsu 430, Mukougaoka
Miyamae-ku Kawasaki-shi Kanagawa 213 / JP
02 / Mochizuki, Hirohiko
2393-1-401, Arima Miyamae-ku
Kawasaki-shi Kanagawa 213 / JP
03 / Miyahara, Hatsuo
8, Dai-2 Yayoi-so, 5-2 Shimoshinjo 3-chome
Nakahara-ku Kawasaki-shi Kanagawa 211 / JP
[1985/24]
Representative(s)Sunderland, James Harry, et al
Haseltine Lake LLP Lincoln House 300 High Holborn London
WC1V 7JH / GB
[N/P]
Former [1985/24]Sunderland, James Harry, et al
HASELTINE LAKE & CO Hazlitt House 28 Southampton Buildings Chancery Lane
London WC2A 1AT / GB
Application number, filing date84308327.030.11.1984
[1985/24]
Priority number, dateJP1983022737201.12.1983         Original published format: JP 22737283
[1985/24]
Filing languageEN
Procedural languageEN
PublicationType: A2 Application without search report 
No.:EP0144223
Date:12.06.1985
Language:EN
[1985/24]
Type: A3 Search report 
No.:EP0144223
Date:08.10.1986
Language:EN
[1986/41]
Type: B1 Patent specification 
No.:EP0144223
Date:25.04.1990
Language:EN
[1990/17]
Search report(s)(Supplementary) European search report - dispatched on:EP18.08.1986
ClassificationIPC:G11C7/00
[1985/24]
CPC:
G11C7/1057 (EP,US); G11C11/34 (KR); G11C11/4093 (EP,US);
G11C7/1006 (EP,US); G11C7/1051 (EP,US)
Designated contracting statesDE,   FR,   GB [1985/24]
TitleGerman:Halbleiterspeicheranordnung[1985/31]
English:Semiconductor memory device[1985/24]
French:Dispositif de mémoire semi-conductrice[1985/31]
Examination procedure13.02.1987Examination requested  [1987/17]
28.01.1988Despatch of a communication from the examining division (Time limit: M08)
06.10.1988Reply to a communication from the examining division
07.11.1988Despatch of a communication from the examining division (Time limit: M08)
12.07.1989Reply to a communication from the examining division
25.08.1989Despatch of communication of intention to grant (Approval: Yes)
30.10.1989Communication of intention to grant the patent
02.01.1990Fee for grant paid
02.01.1990Fee for publishing/printing paid
Opposition(s)26.01.1991No opposition filed within time limit [1991/15]
Fees paidRenewal fee
25.11.1986Renewal fee patent year 03
20.11.1987Renewal fee patent year 04
22.11.1988Renewal fee patent year 05
21.11.1989Renewal fee patent year 06
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Documents cited:Search[A] JP54032236  
 [A]   PATENTS ABSTRACTS OF JAPAN, vol. 3, no. 54 (E-109), 10th May 1979, page 21 E109; & JP-A-54 032 236 (MITSUBISHI DENKI K.K.) 09-03-1979 [A]
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