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EP0129477
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EP About this file: EP0129477
| EP0129477 - Double heterojunction bipolar transistor suited for monolithic integration with optoelectronic devices [Right-click to bookmark this link] | Status | The application has been refused Status updated on 04.12.1987 Database last updated on 02.09.2024 | Most recent event Tooltip | 04.12.1987 | Refusal of application | published on 20.01.1988 [1988/03] | Applicant(s) | For all designated states Ankri, David 112 rue Branccou F-75015 Paris / FR | For all designated states Bouley, Jean-Claude 35, Avenue du Docteur Durand F-94110 Arcueil / FR | For all designated states Scavennec, André 8 rue Deslandres F-75013 Paris / FR | [1987/13] |
| Former [1984/52] | For all designated states Ankri, David 112 rue Branccou F-75015 Paris / FR | ||
| For all designated states Bouley, Jean-Claude 35, Avenue du DR. Durand F-94110 Arcueil / FR | |||
| For all designated states Scavennec, André 8 rue Deslandres F-75013 Paris / FR | Inventor(s) | 01 /
see applicant ... | [1984/52] | Representative(s) | Mongrédien, André, et al c/o BREVATOME 25, rue de Ponthieu F-75008 Paris / FR | [1984/52] | Application number, filing date | 84401225.2 | 14.06.1984 | [1984/52] | Priority number, date | FR19830010073 | 17.06.1983 Original published format: FR 8310073 | [1984/52] | Filing language | FR | Procedural language | FR | Publication | Type: | A1 Application with search report | No.: | EP0129477 | Date: | 27.12.1984 | Language: | FR | [1984/52] | Search report(s) | (Supplementary) European search report - dispatched on: | EP | 05.11.1984 | Classification | IPC: | H01L29/72, H01L29/205, H01L27/15 | [1984/52] | CPC: |
H01L29/205 (EP);
H01L27/15 (EP);
H01L29/7371 (EP)
| Designated contracting states | DE, GB, NL [1984/52] | Title | German: | Bipolartransistor mit doppelten Heteroübergängen, geeignet für eine monolithische Integration mit optoelektronischen Anordnungen | [1984/52] | English: | Double heterojunction bipolar transistor suited for monolithic integration with optoelectronic devices | [1984/52] | French: | Transistor bipolaire à double hétérojonction compatible avec des composants optoélectroniques pour l'intégration monolithique | [1984/52] | File destroyed: | 01.06.1993 | Examination procedure | 04.06.1985 | Examination requested [1985/33] | 01.04.1986 | Despatch of a communication from the examining division (Time limit: M04) | 10.07.1986 | Reply to a communication from the examining division | 12.09.1986 | Despatch of a communication from the examining division (Time limit: M06) | 20.03.1987 | Reply to a communication from the examining division | 20.08.1987 | Despatch of communication that the application is refused, reason: substantive examination [1988/03] | 30.08.1987 | Application refused, date of legal effect [1988/03] | Fees paid | Renewal fee | 18.06.1986 | Renewal fee patent year 03 | 20.06.1987 | Renewal fee patent year 04 |
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| Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Documents cited: | Search | [A]US4160258 ; | [A]US4352116 | [X] - IEEE ELECTRON DEVICES LETTERS, volume EDL-4, no. 5, mai 1983 (NEW YORK, US) S.L. SU et al.: "Double heterojunction AlxGa1-xAs/GaAs bipolar transistors (DHBJT's) by MBE with a current gain of 1650", pages 130-132 |