Extract from the Register of European Patents

EP About this file: EP0139019

EP0139019 - SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURE THEREOF [Right-click to bookmark this link]
StatusNo opposition filed within time limit
Status updated on  21.06.1990
Database last updated on 11.04.2026
Most recent event   Tooltip15.08.2008Change - representativepublished on 17.09.2008  [2008/38]
Applicant(s)For all designated states
Hitachi, Ltd.
6, Kanda Surugadai 4-chome
Chiyoda-ku
Tokyo / JP
[N/P]
Former [1985/18]For all designated states
HITACHI, LTD.
6, Kanda Surugadai 4-chome
Chiyoda-ku, Tokyo 100 / JP
Inventor(s)01 / IKEDA, Takahide
41-11, Nakaarai 4-chome Tokorozawa-shi
Saitama 359 / JP
02 / WATANABE, Atsuo
3949-3, Yamashita-cho Hitachiota-shi
Ibaraki 313 / JP
03 / MUKAI, Touji
89, Aimoto, Sanda-shi
Hyougo 669-16 / JP
04 / ODAKA, Masanori
1-17-7-201, Gakuennishi-cho Kodaira-shi
Tokyo 187 / JP
05 / OGIUE, Katsumi
2196-98, Hirai, Hinode-cho Nishitama-Gun
Tokyo 190-01 / JP
[1985/18]
Representative(s)Beetz & Partner mbB
Patentanwälte
Prinzregentenstraße 54
80538 München / DE
[N/P]
Former [2008/38]Beetz & Partner
Patentanwälte Steinsdorfstrasse 10
80538 München / DE
Former [1985/18]Patentanwälte Beetz - Timpe - Siegfried Schmitt-Fumian - Mayr
Steinsdorfstrasse 10
D-80538 München / DE
Application number, filing date84901232.326.03.1984
[1985/18]
WO1984JP00133
Priority number, dateJP1983005307728.03.1983         Original published format: JP 5307783
[1985/18]
Filing languageJA
Procedural languageEN
PublicationType: A2 Application without search report
No.:WO8403996
Date:11.10.1984
[1984/24]
Type: A1 Application with search report 
No.:EP0139019
Date:02.05.1985
Language:EN
[1985/18]
Type: B1 Patent specification 
No.:EP0139019
Date:23.08.1989
Language:EN
[1989/34]
Search report(s)(Supplementary) European search report - dispatched on:EP02.12.1985
ClassificationIPC:H01L27/06, H01L27/08, H01L29/78
[1985/18]
CPC:
H10W15/00 (EP,KR,US); H10D84/0109 (EP,KR,US); H10D84/0165 (KR);
H10D84/038 (EP,US); H10D84/401 (EP,KR,US); H10D84/85 (KR);
H10W15/01 (EP,US) (-)
Designated contracting statesCH,   DE,   FR,   GB,   LI,   NL,   SE [1985/18]
TitleGerman:HALBLEITERANORDNUNG UND DEREN HERSTELLUNG[1985/18]
English:SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURE THEREOF[1985/18]
French:DISPOSITIF SEMICONDUCTEUR ET SON PROCEDE DE FABRICATION[1985/18]
Entry into regional phase14.11.1984Translation filed 
15.11.1984National basic fee paid 
15.11.1984Search fee paid 
15.11.1984Designation fee(s) paid 
15.11.1984Examination fee paid 
Examination procedure15.11.1984Examination requested  [1985/18]
19.11.1987Despatch of a communication from the examining division (Time limit: M06)
12.04.1988Reply to a communication from the examining division
15.09.1988Despatch of communication of intention to grant (Approval: No)
10.02.1989Despatch of communication of intention to grant (Approval: later approval)
16.02.1989Communication of intention to grant the patent
21.02.1989Fee for grant paid
21.02.1989Fee for publishing/printing paid
Opposition(s)24.05.1990No opposition filed within time limit [1990/32]
Fees paidRenewal fee
01.04.1986Renewal fee patent year 03
25.03.1987Renewal fee patent year 04
22.03.1988Renewal fee patent year 05
22.03.1989Renewal fee patent year 06
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Documents cited:Search[YD]   PROCEEDINGS OF THE 1981 CUSTOM INTEGRATED CIRCUIT CONFERENCE, 11th-13th May 1981, pages 8-12, IEEE, Rochester, N.Y., US; M. HEISIG: "BiMOS - A new way to simplify high-power custom interface" [YD]
 [A]   IBM TECHNICAL DISCLOSURE BULLETIN, vol. 13, no. 5, October 1970, page 1106, New York, US; M.B. VORA: "FET-bipolar integration" [A]
International search[X] JPH0537507   [X]
 [X]   IBM Technical Disclosure Bulletin Vol. 16 No. 6 (1973-11) p. 1985-1986 [X]
 [A]   IBM Technical Disclosure Bulletin Vol. 13 No. 5 (1970-10) p. 1160 [A]
Examination  IBM Technical Disclosure Bulletin, vol. 16, no. 6 (1973-11), pp. 1985-1986 [YD]
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