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EP0156156
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EP About this file: EP0156156
| EP0156156 - Avalanche photodiodes [Right-click to bookmark this link] | Status | The application has been refused Status updated on 11.04.1991 Database last updated on 20.12.2024 | Most recent event Tooltip | 07.07.2007 | Change - inventor | published on 08.08.2007 [2007/32] | Applicant(s) | For all designated states FUJITSU LIMITED 1015, Kamikodanaka, Nakahara-ku Kawasaki-shi Kanagawa 211 / JP | [N/P] |
| Former [1985/40] | For all designated states FUJITSU LIMITED 1015, Kamikodanaka, Nakahara-ku Kawasaki-shi, Kanagawa 211 / JP | Inventor(s) | 01 /
Osaka, Fukunobu c/o FUJITSU LIMITED Patent Department 1015 Kamikodanaka Nakahara-ku Kawasaki-shi Kanagawa 211 / JP | 02 /
Shirai, Tatsunori c/o FUJITSU LIMITED Patent Department 1015 Kamikodanaka Nakahara-ku Kawasaki-shi Kanagawa 211 / JP | [1985/40] | Representative(s) | Sunderland, James Harry, et al Haseltine Lake LLP Lincoln House 300 High Holborn London WC1V 7JH / GB | [N/P] |
| Former [1985/40] | Sunderland, James Harry, et al HASELTINE LAKE & CO Hazlitt House 28 Southampton Buildings Chancery Lane London WC2A 1AT / GB | Application number, filing date | 85101755.8 | 01.12.1981 | [1985/40] | Priority number, date | JP19800169889 | 02.12.1980 Original published format: JP 16988980 | [1985/40] | Filing language | EN | Procedural language | EN | Publication | Type: | A1 Application with search report | No.: | EP0156156 | Date: | 02.10.1985 | Language: | EN | [1985/40] | Search report(s) | (Supplementary) European search report - dispatched on: | EP | 30.07.1985 | Classification | IPC: | H01L31/10 | [1985/40] | CPC: |
H01L31/1075 (EP,US)
| Designated contracting states | DE, FR, GB, NL [1985/40] | Title | German: | Avalanche-Photodioden | [1985/40] | English: | Avalanche photodiodes | [1985/40] | French: | Photodiodes à avalanche | [1985/40] | Examination procedure | 04.03.1985 | Examination requested [1985/40] | 04.03.1988 | Despatch of a communication from the examining division (Time limit: M08) | 04.11.1988 | Reply to a communication from the examining division | 04.12.1989 | Despatch of communication that the application is refused, reason: substantive examination [1991/22] | 29.01.1991 | Application refused, date of legal effect [1991/22] | Appeal following examination | 05.02.1990 | Appeal received No. T0409/90 | 17.04.1990 | Statement of grounds filed | 29.01.1991 | Result of appeal procedure: appeal of the applicant was rejected | 29.01.1991 | Date of oral proceedings | 30.01.1991 | Minutes of oral proceedings despatched | Parent application(s) Tooltip | EP81305658.7 / EP0053513 | Fees paid | Renewal fee | 04.03.1985 | Renewal fee patent year 03 | 04.03.1985 | Renewal fee patent year 04 | 22.11.1985 | Renewal fee patent year 05 | 25.11.1986 | Renewal fee patent year 06 | 20.11.1987 | Renewal fee patent year 07 | 22.11.1988 | Renewal fee patent year 08 | 23.11.1989 | Renewal fee patent year 09 | 22.11.1990 | Renewal fee patent year 10 |
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| Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Documents cited: | Search | [A]JP55132079 | [Y] - ELECTRONICS LETTERS, vol. 16, no. 18, 28th August 1980, pages 716-717, Hitchin Herts, GB; F.OSAKA et al.: "InP/InGaAsP avalanche photodiodes with new guard ring structure" | [Y] - APPLIED PHYSICS LETTERS, vol. 35, no. 3, August 1979, pages 251-253, American Institute of Physics, New York, US; KATSUHIKO NISHIDA et al.: "InGaAsP heterostructure avalanche photodiodes with high avalanche gain" | [A] - ELECTRONICS LETTERS, vol. 15, no. 15, July 1979, pages 453-455, Hitchin Herts, GB; K.TAGUCHI et al.: "InP-InGaAsP planar avalanche photodiodes with self-guard-ring effect" | [A] - PATENTS ABSTRACTS OF JAPAN, vol. 4, no. 189 (E-39)[671], 25th December 1980; & JP - A - 55 132 079 (NIPPON DENKI K.K.) 14-10-1980, & JP55132079 A 00000000 | [XP] - IEEE JOURNAL OF QUANTUM ELECTRONICS, vol. QE-15, no. 7, July 1979, pages 549-558, New York, US; H.D.LAW et al.: "III-V alloy heterostructure high speed avalanche photodiodes" | [ ] - ELECTRONICS LETTERS, vol. 17, no. 22, October 1981, pages 826-827, London, GB; T.SHIRAI et al.: "1.3 mum InP/InGaAsP planar avalanche photodiodes" |