-
EP0177903
European procedure
Extract from the Register of European Patents
EP About this file: EP0177903
| EP0177903 - Semiconductor device having a gallium arsenide crystal layer grown on a silicon substrate and method for producing it [Right-click to bookmark this link] | Status | No opposition filed within time limit Status updated on 16.11.1991 Database last updated on 10.03.2026 | Most recent event Tooltip | 16.11.1991 | No opposition filed within time limit | published on 08.01.1992 [1992/02] | Applicant(s) | For all designated states DAIDOTOKUSHUKO KABUSHIKI KAISHA 66 Aza-Kuridashi Hoshizaki-cho Minami-ku Nagoya-shi Aichi-ken / JP | For all designated states Umeno, Masayoshi 43-2 Nishizato-cho 2-chome Meitoh-ku Nagoya-shi Aichi-ken / JP | [N/P] |
| Former [1986/16] | For all designated states DAIDOTOKUSHUKO KABUSHIKI KAISHA 66 Aza-Kuridashi Hoshizaki-cho Minami-ku Nagoya-shi Aichi-ken / JP | ||
| For all designated states Umeno, Masayoshi 43-2 Nishizato-cho 2-chome Meitoh-ku Nagoya-shi Aichi-ken / JP | Inventor(s) | 01 /
Umeno, Masayoshi 43-2 Nishizato-cho 2-chome Meitoh-ku Nagoya-shi Aichi-ken / JP | 02 /
Sakai, Shiro 128-4 Kawanayama-cho Shohwa-ku Nagoya-shi Aichi-ken / JP | 03 /
Soga, Tetsuo 2-13 Hinode-cho Nakatsugawa-shi Gifu-ken / JP | [1986/16] | Representative(s) | Blumbach Weser Bergen Kramer Zwirner Hoffmann Patentanwälte Radeckestrasse 43 81245 München / DE | [N/P] |
| Former [1986/16] | Blumbach Weser Bergen Kramer Zwirner Hoffmann Patentanwälte Radeckestrasse 43 D-81245 München / DE | Application number, filing date | 85112542.7 | 03.10.1985 | [1986/16] | Priority number, date | JP19840213188 | 09.10.1984 Original published format: JP 21318884 | [1986/16] | Filing language | EN | Procedural language | EN | Publication | Type: | A2 Application without search report | No.: | EP0177903 | Date: | 16.04.1986 | Language: | EN | [1986/16] | Type: | A3 Search report | No.: | EP0177903 | Date: | 09.09.1987 | Language: | EN | [1987/37] | Type: | B1 Patent specification | No.: | EP0177903 | Date: | 16.01.1991 | Language: | EN | [1991/03] | Search report(s) | (Supplementary) European search report - dispatched on: | EP | 23.07.1987 | Classification | IPC: | H01L29/167, H01L21/205 | [1986/16] | CPC: |
H10P14/2905 (EP,US);
H10D62/82 (US);
H10P14/24 (EP,US);
H10P14/3211 (EP,US);
H10P14/3218 (EP,US);
H10P14/3221 (EP,US);
| Designated contracting states | DE, FR, GB, NL [1986/16] | Title | German: | Halbleiteranordnung mit monokristalliner Schicht aus Ga-As auf einem Substrat aus Silicium und Verfahren zu deren Herstellung | [1986/16] | English: | Semiconductor device having a gallium arsenide crystal layer grown on a silicon substrate and method for producing it | [1986/16] | French: | Dispositif semi-conducteur comportant une couche de Ga-As monocristallin formée sur un substrat en silicium et procédé pour la fabrication de ce dispositif | [1986/16] | Examination procedure | 12.09.1986 | Examination requested [1986/46] | 01.06.1989 | Despatch of a communication from the examining division (Time limit: M04) | 28.09.1989 | Reply to a communication from the examining division | 04.01.1990 | Despatch of communication of intention to grant (Approval: Yes) | 17.04.1990 | Communication of intention to grant the patent | 06.07.1990 | Fee for grant paid | 06.07.1990 | Fee for publishing/printing paid | Opposition(s) | 17.10.1991 | No opposition filed within time limit [1992/02] | Fees paid | Renewal fee | 17.10.1987 | Renewal fee patent year 03 | 19.10.1988 | Renewal fee patent year 04 | 14.10.1989 | Renewal fee patent year 05 | 16.10.1990 | Renewal fee patent year 06 |
| Opt-out from the exclusive Tooltip competence of the Unified Patent Court | See the Register of the Unified Patent Court for opt-out data | ||
| Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Documents cited: | Search | [A] JAPANESE JOURNAL OF APPLIED PHYSICS. SUPPLEMENTS 16th INTERNATIONAL CONFERENCE SOLID STATE DEVICES AND MATERIALS, 30th August - 1st September 1984, Kobe, JP, pages 115-119, Tokyo, JP; J.C.C. FAN: "Monolithic integration of GaAs and Si" [A] | [A] APPLIED PHYSICS LETTERS, vol. 43, no. 8, 15th October 1983, pages 759-761, American Institute of Physics, New York, US; R.M. BIEFELD et al.: "Independently variable band gaps and lattice constants in GaAsP strained-layer superlattices" [A] | [XP] ELECTRONICS LETTERS, vol. 20, no. 22, 25th October 1984, page 916-918, Hitchin Herts, GB; T. SOGA et al.: "MOCVD growth of GaAs on Si substrates with AlGaP and strained superlattice layers" [XP] |