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Extract from the Register of European Patents

EP About this file: EP0150885

EP0150885 - Semiconductor device for producing an electron beam [Right-click to bookmark this link]
StatusNo opposition filed within time limit
Status updated on  24.04.1989
Database last updated on 11.09.2024
Most recent event   Tooltip24.04.1989No opposition filed within time limitpublished on 14.06.1989 [1989/24]
Applicant(s)For all designated states
Koninklijke Philips Electronics N.V.
Groenewoudseweg 1
5621 BA Eindhoven / NL
[N/P]
Former [1985/32]For all designated states
Philips Electronics N.V.
Groenewoudseweg 1
NL-5621 BA Eindhoven / NL
Inventor(s)01 / van der Mast, Karel Diederick
c/o INT. OCTROOIBUREAU B.V. Prof. Holstlaan 6
NL-5656 AA Eindhoven / NL
02 / Hoeberechts, Arthur Marie Eugene
c/o INT. OCTROOIBUREAU B.V. Prof. Holstlaan 6
NL-5656 AA Eindhoven / NL
03 / van Gorkom, Gerardus Gegorius Petrus
c/o INT. OCTROOIBUREAU B.V. Prof. Holstlaan 6
NL-5656 AA Eindhoven / NL
[1985/32]
Representative(s)Raap, Adriaan Yde, et al
Philips Intellectual Property & Standards P.O. Box 220
5600 AE Eindhoven / NL
[N/P]
Former [1985/32]Raap, Adriaan Yde, et al
INTERNATIONAAL OCTROOIBUREAU B.V., Prof. Holstlaan 6
NL-5656 AA Eindhoven / NL
Application number, filing date85200083.528.01.1985
[1985/32]
Priority number, dateNL1984000029701.02.1984         Original published format: NL 8400297
[1985/32]
Filing languageNL
Procedural languageEN
PublicationType: A2 Application without search report 
No.:EP0150885
Date:07.08.1985
Language:EN
[1985/32]
Type: A3 Search report 
No.:EP0150885
Date:28.08.1985
Language:EN
[1985/35]
Type: B1 Patent specification 
No.:EP0150885
Date:29.06.1988
Language:EN
[1988/26]
Search report(s)(Supplementary) European search report - dispatched on:EP25.06.1985
ClassificationIPC:H01J1/30, H01J29/04, H01J37/073
[1985/32]
CPC:
H01J1/308 (EP,US)
Designated contracting statesAT,   DE,   FR,   GB,   IT,   NL [1985/32]
TitleGerman:Halbleitervorrichtung zur Erzeugung eines Elektronenstrahles[1985/32]
English:Semiconductor device for producing an electron beam[1985/32]
French:Dispositif à semi-conducteur émettant un faisceau d'électrons[1985/32]
Examination procedure27.02.1986Examination requested  [1986/18]
13.10.1986Despatch of a communication from the examining division (Time limit: M04)
15.01.1987Reply to a communication from the examining division
13.02.1987Despatch of a communication from the examining division (Time limit: M02)
20.03.1987Reply to a communication from the examining division
13.07.1987Despatch of communication of intention to grant (Approval: )
27.10.1987Communication of intention to grant the patent
27.01.1988Fee for grant paid
27.01.1988Fee for publishing/printing paid
Opposition(s)30.03.1989No opposition filed within time limit [1989/24]
Fees paidRenewal fee
22.01.1987Renewal fee patent year 03
19.01.1988Renewal fee patent year 04
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Documents cited:Search[A]JP56160740  ;
 [A]US3581151  (BOYLE WILLARD S, et al);
 [A]US4168213  (HOEBERECHTS ARTHUR M E);
 [A]GB2054959  (PHILIPS NV)
 [A]  - PATENTS ABSTRACTS OF JAPAN, vol. 6, no. 47 (E-99)[925], 26th March 1982, page 12E99; & JP-A-56 160 740 (SONY K.K.) 10-12-1981, & JP56160740 A 00000000
The EPO accepts no responsibility for the accuracy of data originating from other authorities; in particular, it does not guarantee that it is complete, up to date or fit for specific purposes.