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EP0182422
European procedure
Extract from the Register of European Patents
EP About this file: EP0182422
| EP0182422 - High breakdown voltage semiconductor devices [Right-click to bookmark this link] | Status | No opposition filed within time limit Status updated on 10.12.1992 Database last updated on 26.06.2024 | Most recent event Tooltip | 22.06.1995 | Change - lapse in a contracting state State(s) deleted from list of lapses: GB | published on 09.08.1995 [1995/32] | Applicant(s) | For:GB
PHILIPS ELECTRONICS UK LIMITED 420-430 London Road Croydon CR9 3QR / GB | For:CH
DE
FR
IT
LI
NL
Koninklijke Philips Electronics N.V. Groenewoudseweg 1 5621 BA Eindhoven / NL | [N/P] |
| Former [1986/22] | For:GB
PHILIPS ELECTRONICS UK LIMITED 420-430 London Road Croydon CR9 3QR / GB | ||
| For:CH
DE
FR
IT
LI
NL
Philips Electronics N.V. Groenewoudseweg 1 NL-5621 BA Eindhoven / NL | Inventor(s) | 01 /
Whight, Kenneth Ronald c/o Philips Research Laboratories Redhill Surrey RH1 5HA / GB | [1986/22] | Representative(s) | Stevens, Brian Thomas, et al Philips Electronics UK Limited Patents and Trade Marks Department Cross Oak Lane Redhill, Surrey RH1 5HA / GB | [1989/05] |
| Former [1988/10] | Stevens, Brian Thomas PHILIPS ELECTRONICS Patents and Trade Marks Department Centre Point New Oxford Street London WC1A 1QJ / GB | ||
| Former [1986/22] | Stevens, Brian Thomas Philips Electronics UK Limited Patents and Trade Marks Department Cross Oak Lane Redhill, Surrey RH1 5HA / GB | Application number, filing date | 85201810.0 | 08.11.1985 | [1986/22] | Priority number, date | GB19840029410 | 21.11.1984 Original published format: GB 8429410 | [1986/22] | Filing language | EN | Procedural language | EN | Publication | Type: | A2 Application without search report | No.: | EP0182422 | Date: | 28.05.1986 | Language: | DE | [1986/22] | Type: | A3 Search report | No.: | EP0182422 | Date: | 07.01.1988 | Language: | DE | [1988/01] | Type: | B1 Patent specification | No.: | EP0182422 | Date: | 05.02.1992 | Language: | EN | [1992/06] | Search report(s) | (Supplementary) European search report - dispatched on: | EP | 18.11.1987 | Classification | IPC: | H01L29/06 | [1986/22] | CPC: |
H01L29/405 (EP,US);
H01L29/0619 (EP,US);
H01L29/7322 (EP,US);
H01L29/7393 (EP,US);
H01L29/74 (EP,US);
H01L29/8611 (EP,US);
| Designated contracting states | CH, DE, FR, GB, IT, LI, NL [1986/22] | Title | German: | Halbleitervorrichtungen mit hoher Durchbruchspannung | [1986/22] | English: | High breakdown voltage semiconductor devices | [1986/22] | French: | Dispositifs semi-conducteurs à haute tension de claquage | [1986/22] | Examination procedure | 17.06.1988 | Examination requested [1988/33] | 15.03.1991 | Despatch of communication of intention to grant (Approval: No) | 12.07.1991 | Despatch of communication of intention to grant (Approval: later approval) | 25.07.1991 | Communication of intention to grant the patent | 22.10.1991 | Fee for grant paid | 22.10.1991 | Fee for publishing/printing paid | Opposition(s) | 06.11.1992 | No opposition filed within time limit [1993/04] | Fees paid | Renewal fee | 13.11.1987 | Renewal fee patent year 03 | 28.11.1988 | Renewal fee patent year 04 | 27.11.1989 | Renewal fee patent year 05 | 27.11.1990 | Renewal fee patent year 06 | 26.11.1991 | Renewal fee patent year 07 |
| Opt-out from the exclusive Tooltip competence of the Unified Patent Court | See the Register of the Unified Patent Court for opt-out data | ||
| Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Lapses during opposition Tooltip | NL | 05.02.1992 | [1995/32] |
| Former [1993/14] | GB | 05.02.1992 | |
| NL | 05.02.1992 | ||
| Former [1992/37] | NL | 05.02.1992 | Documents cited: | Search | [A]DE3338718 (MITSUBISHI ELECTRIC CORP [JP]); | [A]US4157563 (BOSSELAAR CORNELIS A [NL]); | [AD]FR2070661 (SOC GEN SEMICONDUTTORI SPA [IT]); | [AD]GB2131603 (PHILIPS ELECTRONIC ASSOCIATED) | [A] - NEUES AUS DER TECHNIK, no. 4, 1st August 1975, page 2, Würzburg, DE; "Erhöhung der Durchbruchspannung eines planaren PN-Überganges" | [A] - IEEE ELECTRON DEVICE LETTERS, vol. EDL-2, no. 9, September 1981, pages 219-221, IEEE, New York, US; F.A. SELIM: "High-voltage, large-area planar devices" |