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Extract from the Register of European Patents

EP About this file: EP0184868

EP0184868 - Electron-beam device and semiconducteur device for use in such an electron-beam device [Right-click to bookmark this link]
StatusNo opposition filed within time limit
Status updated on  15.12.1990
Database last updated on 05.10.2024
Most recent event   Tooltip15.12.1990No opposition filed within time limitpublished on 06.02.1991 [1991/06]
Applicant(s)For all designated states
Koninklijke Philips Electronics N.V.
Groenewoudseweg 1
5621 BA Eindhoven / NL
[N/P]
Former [1986/25]For all designated states
Philips Electronics N.V.
Groenewoudseweg 1
NL-5621 BA Eindhoven / NL
Inventor(s)01 / Hoeberechts, Arthur Marie Eugene
INT. OCTROOIBUREAU B.V. Prof.Holstlaan 6
NL-5656 AA Eindhoven / NL
02 / Van Gorkom, Gerardus Gegorius Petrus
INT. OCTROOIBUREAU B.V. Prof.Holstlaan 6
NL-5656 AA Eindhoven / NL
[1986/25]
Representative(s)Raap, Adriaan Yde, et al
Philips Intellectual Property & Standards P.O. Box 220
5600 AE Eindhoven / NL
[N/P]
Former [1986/25]Raap, Adriaan Yde, et al
INTERNATIONAAL OCTROOIBUREAU B.V., Prof. Holstlaan 6
NL-5656 AA Eindhoven / NL
Application number, filing date85201866.213.11.1985
[1986/25]
Priority number, dateNL1984000361328.11.1984         Original published format: NL 8403613
[1986/25]
Filing languageNL
Procedural languageEN
PublicationType: A1 Application with search report 
No.:EP0184868
Date:18.06.1986
Language:EN
[1986/25]
Type: B1 Patent specification 
No.:EP0184868
Date:21.02.1990
Language:EN
[1990/08]
Search report(s)(Supplementary) European search report - dispatched on:EP24.04.1986
ClassificationIPC:H01J29/48, H01J3/02
[1986/25]
CPC:
H01J29/481 (EP,US); H01J3/021 (EP,US)
Designated contracting statesDE,   FR,   GB,   IT,   NL [1986/25]
TitleGerman:Elektronenstrahlvorrichtung und Halbleitervorrichtung zur Verwendung in solch einer Elektronenstrahlvorrichtung[1986/25]
English:Electron-beam device and semiconducteur device for use in such an electron-beam device[1986/25]
French:Dispositif à faisceau d'électrons et dispositif semi-conducteur destiné à être utilisé dans un tel dispositif à faisceau d'électrons[1986/25]
Examination procedure12.12.1986Examination requested  [1987/09]
25.01.1988Despatch of a communication from the examining division (Time limit: M04)
21.04.1988Reply to a communication from the examining division
19.10.1988Despatch of communication of intention to grant (Approval: No)
10.05.1989Despatch of communication of intention to grant (Approval: later approval)
22.05.1989Communication of intention to grant the patent
21.08.1989Fee for grant paid
21.08.1989Fee for publishing/printing paid
Opposition(s)23.11.1990No opposition filed within time limit [1991/06]
Fees paidRenewal fee
13.11.1987Renewal fee patent year 03
28.11.1988Renewal fee patent year 04
27.11.1989Renewal fee patent year 05
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Documents cited:Search[A]JP5738528  ;
 [A]GB2109156  (PHILIPS NV);
 [A]EP0086431  (SIEMENS AG [DE])
 [A]  - PATENTS ABSTRACTS OF JAPAN, vol. 6, no. 107 (E-113) [985], 17th June 1982, page 133 E 113; & JP - A - 57 38 528 (HAMAMATSU TELEVISION K.K.) 03-03-1982, & JP5738528 A 00000000
The EPO accepts no responsibility for the accuracy of data originating from other authorities; in particular, it does not guarantee that it is complete, up to date or fit for specific purposes.