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Extract from the Register of European Patents

EP About this file: EP0164182

EP0164182 - JFET active load input stage [Right-click to bookmark this link]
StatusNo opposition filed within time limit
Status updated on  27.10.1989
Database last updated on 24.04.2024
Most recent event   Tooltip27.10.1989No opposition filed within time limitpublished on 13.12.1989 [1989/50]
Applicant(s)For all designated states
PRECISION MONOLITHICS INC.
1500 Space Park Drive Santa Clara
California 95050 / US
[N/P]
Former [1985/50]For all designated states
PRECISION MONOLITHICS INC.
1500 Space Park Drive
Santa Clara California 95050 / US
Inventor(s)01 / Butler, James R.
925 Foxridge Way
San Jose California 95133 / US
[1985/50]
Representative(s)Crawford, Andrew Birkby, et al
A.A. Thornton & Co. 235 High Holborn
London WC1V 7LE / GB
[N/P]
Former [1985/50]Crawford, Andrew Birkby, et al
A.A. THORNTON & CO. Northumberland House 303-306 High Holborn
London WC1V 7LE / GB
Application number, filing date85301899.219.03.1985
[1985/50]
Priority number, dateUS1984061599631.05.1984         Original published format: US 615996
[1985/50]
Filing languageEN
Procedural languageEN
PublicationType: A1 Application with search report 
No.:EP0164182
Date:11.12.1985
Language:EN
[1985/50]
Type: B1 Patent specification 
No.:EP0164182
Date:28.12.1988
Language:EN
[1988/52]
Search report(s)(Supplementary) European search report - dispatched on:EP25.09.1985
ClassificationIPC:H03F3/45
[1985/50]
CPC:
H03F3/4508 (EP,US); H03F3/45291 (EP,US); H03F3/45381 (EP,US);
H03F3/45654 (EP,US); H03F3/45659 (EP,US); H03F2203/45304 (EP,US);
H03F2203/45648 (EP,US) (-)
Designated contracting statesDE,   FR,   GB [1985/50]
TitleGerman:JFET Eingangsstufe mit aktiver Last[1985/50]
English:JFET active load input stage[1985/50]
French:Etage d'entrée JFET à résistance de charge active[1985/50]
Examination procedure29.01.1986Examination requested  [1986/14]
09.07.1987Despatch of a communication from the examining division (Time limit: M04)
08.10.1987Reply to a communication from the examining division
01.12.1987Despatch of communication of intention to grant (Approval: Yes)
05.02.1988Communication of intention to grant the patent
31.03.1988Fee for grant paid
31.03.1988Fee for publishing/printing paid
Opposition(s)29.09.1989No opposition filed within time limit [1989/50]
Fees paidRenewal fee
09.03.1987Renewal fee patent year 03
07.03.1988Renewal fee patent year 04
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Documents cited:Search[Y]US4121169  (IWAMATSU MASAYUKI);
 [Y]US3851270  (VOSTEEN R);
 [AP]EP0115165  (FUJITSU LTD [JP]);
 [A]US3947778  (HSIAO PERNG, et al);
 [A]US3852679  (SCHADE O);
 [A]US3873933  (WHEATLEY JR CARL FRANKLIN)
ExaminationEP0127832
The EPO accepts no responsibility for the accuracy of data originating from other authorities; in particular, it does not guarantee that it is complete, up to date or fit for specific purposes.