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Extract from the Register of European Patents

EP About this file: EP0181188

EP0181188 - Forming trenches in integrated circuit structures [Right-click to bookmark this link]
StatusNo opposition filed within time limit
Status updated on  14.01.1993
Database last updated on 31.08.2024
Most recent event   Tooltip28.09.2007Lapse of the patent in a contracting statepublished on 31.10.2007  [2007/44]
Applicant(s)For all designated states
ADVANCED MICRO DEVICES, INC.
901 Thompson Place P.O. Box 3453
Sunnyvale CA 94088-3453 / US
[N/P]
Former [1986/20]For all designated states
ADVANCED MICRO DEVICES, INC.
901 Thompson Place P.O. Box 3453
Sunnyvale, CA 94088 / US
Inventor(s)01 / Price, William L.
20335 Argonaut
Saratoga California / US
02 / Schlupp, Ronald L.
227 Arroya Grande
Los Gatos California / US
03 / Thomas, Mammen
1081 Corvette Drive
San Jose California 95129 / US
[1986/20]
Representative(s)Sanders, Peter Colin Christopher, et al
Brookes Batchellor 1 Boyne Park Tunbridge Wells
Kent TN4 8EL / GB
[N/P]
Former [1986/20]Sanders, Peter Colin Christopher, et al
BROOKES & MARTIN High Holborn House 52/54 High Holborn
London WC1V 6SE / GB
Application number, filing date85307999.404.11.1985
[1986/20]
Priority number, dateUS1984066822505.11.1984         Original published format: US 668225
[1986/20]
Filing languageEN
Procedural languageEN
PublicationType: A2 Application without search report 
No.:EP0181188
Date:14.05.1986
Language:EN
[1986/20]
Type: A3 Search report 
No.:EP0181188
Date:28.09.1988
Language:EN
[1988/39]
Type: B1 Patent specification 
No.:EP0181188
Date:11.03.1992
Language:EN
[1992/11]
Search report(s)(Supplementary) European search report - dispatched on:EP10.08.1988
ClassificationIPC:H01L21/76, H01L21/306
[1988/35]
CPC:
H01L21/76232 (EP,US); H01L21/3065 (EP,US); H01L21/3081 (EP,US);
H01L21/3085 (EP,US); H01L21/763 (EP,US)
Former IPC [1986/20]H01L21/306, H01L21/76
Designated contracting statesAT,   BE,   CH,   DE,   FR,   GB,   IT,   LI,   LU,   NL,   SE [1986/20]
TitleGerman:Verfahren zur Herstellung von Gräben in integrierten Schaltungen[1986/20]
English:Forming trenches in integrated circuit structures[1986/20]
French:Procédé de formation de rainures dans des circuits intégrés[1986/20]
Examination procedure14.11.1988Examination requested  [1989/02]
10.01.1990Despatch of a communication from the examining division (Time limit: M06)
01.06.1990Reply to a communication from the examining division
13.03.1991Despatch of communication of intention to grant (Approval: Yes)
30.04.1991Communication of intention to grant the patent
25.07.1991Fee for grant paid
25.07.1991Fee for publishing/printing paid
Opposition(s)12.12.1992No opposition filed within time limit [1993/09]
Fees paidRenewal fee
28.11.1987Renewal fee patent year 03
24.11.1988Renewal fee patent year 04
25.11.1989Renewal fee patent year 05
19.11.1990Renewal fee patent year 06
27.11.1991Renewal fee patent year 07
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Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court.
Lapses during opposition  TooltipAT11.03.1992
BE11.03.1992
CH11.03.1992
IT11.03.1992
LI11.03.1992
NL11.03.1992
SE11.03.1992
LU30.11.1992
[2007/44]
Former [1999/52]AT11.03.1992
BE11.03.1992
CH11.03.1992
IT11.03.1992
LI11.03.1992
NL11.03.1992
SE11.03.1992
LU30.11.1992
Former [1999/42]AT11.03.1992
BE11.03.1992
CH11.03.1992
IT11.03.1992
LI11.03.1992
NL11.03.1992
SE11.03.1992
Former [1993/03]AT11.03.1992
BE11.03.1992
CH11.03.1992
LI11.03.1992
NL11.03.1992
SE11.03.1992
Former [1992/48]BE11.03.1992
CH11.03.1992
LI11.03.1992
NL11.03.1992
SE11.03.1992
Former [1992/47]CH11.03.1992
LI11.03.1992
SE11.03.1992
Former [1992/37]CH11.03.1992
LI11.03.1992
Documents cited:Search[A]EP0048175  (HITACHI LTD [JP]);
 [A]US4403396  (STEIN RICHARD J [US]);
 [A]US4472240  (KAMEYAMA SHUICHI [JP])
The EPO accepts no responsibility for the accuracy of data originating from other authorities; in particular, it does not guarantee that it is complete, up to date or fit for specific purposes.