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Extract from the Register of European Patents

EP About this file: EP0165106

EP0165106 - Semiconductor memory device [Right-click to bookmark this link]
StatusNo opposition filed within time limit
Status updated on  30.07.1992
Database last updated on 27.07.2024
Most recent event   Tooltip30.07.1992No opposition filed within time limitpublished on 16.09.1992 [1992/38]
Applicant(s)For all designated states
FUJITSU LIMITED
1015, Kamikodanaka, Nakahara-ku Kawasaki-shi
Kanagawa 211 / JP
[N/P]
Former [1985/51]For all designated states
FUJITSU LIMITED
1015, Kamikodanaka, Nakahara-ku
Kawasaki-shi, Kanagawa 211 / JP
Inventor(s)01 / Takemae, Yoshihiro
8-13-24-303, Akasaka Minato-ku
Tokyo 107 / JP
02 / Nakano, Tomio
12-404, 1-11-2, Shirahatadai Miyamae-ku
Kawasaki-shi Kanagawa 213 / JP
03 / Sato, Kimiaki
4-11-35-204, Minamiazabu Minato-ku
Tokyo 106 / JP
[1985/51]
Representative(s)Descourtieux, Philippe, et al
Cabinet Beau de Loménie 158, rue de l'Université
75340 Paris Cédex 07 / FR
[N/P]
Former [1985/51]Descourtieux, Philippe, et al
Cabinet Beau de Loménie 158, rue de l'Université
F-75340 Paris Cédex 07 / FR
Application number, filing date85400865.303.05.1985
[1985/51]
Priority number, dateJP1984008833104.05.1984         Original published format: JP 8833184
[1985/51]
Filing languageEN
Procedural languageEN
PublicationType: A2 Application without search report 
No.:EP0165106
Date:18.12.1985
Language:EN
[1985/51]
Type: A3 Search report 
No.:EP0165106
Date:15.02.1989
Language:EN
[1989/07]
Type: B1 Patent specification 
No.:EP0165106
Date:25.09.1991
Language:EN
[1991/39]
Search report(s)(Supplementary) European search report - dispatched on:EP28.12.1988
ClassificationIPC:G11C11/407, G11C11/408, G11C11/409
[1991/39]
CPC:
G11C8/12 (EP,US); H01L29/93 (KR); G11C11/4076 (EP,US);
G11C11/408 (EP,US); G11C11/4096 (EP,US); G11C11/4097 (EP,US)
Former IPC [1985/51]G11C11/24, G11C11/40, G11C8/00, G11C7/00
Designated contracting statesDE,   FR,   GB [1985/51]
TitleGerman:Halbleiterspeichergerät[1985/51]
English:Semiconductor memory device[1985/51]
French:Dispositif de mémoire semi-conductrice[1985/51]
File destroyed:03.03.2001
Examination procedure14.03.1989Examination requested  [1989/44]
22.10.1990Despatch of communication of intention to grant (Approval: No)
18.02.1991Despatch of communication of intention to grant (Approval: later approval)
26.02.1991Communication of intention to grant the patent
15.05.1991Fee for grant paid
15.05.1991Fee for publishing/printing paid
Opposition(s)26.06.1992No opposition filed within time limit [1992/38]
Fees paidRenewal fee
19.05.1987Renewal fee patent year 03
18.05.1988Renewal fee patent year 04
23.05.1989Renewal fee patent year 05
25.05.1990Renewal fee patent year 06
27.05.1991Renewal fee patent year 07
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Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court.
Documents cited:Search[A]EP0087754  (TOKYO SHIBAURA ELECTRIC CO [JP]);
 [AD]US4122546  (VON BASSE PAUL-WERNER, et al)
The EPO accepts no responsibility for the accuracy of data originating from other authorities; in particular, it does not guarantee that it is complete, up to date or fit for specific purposes.