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Extract from the Register of European Patents

EP About this file: EP0196474

EP0196474 - Semiconductor device made of compound semiconductor material [Right-click to bookmark this link]
StatusNo opposition filed within time limit
Status updated on  12.06.1998
Database last updated on 02.07.2024
Most recent event   Tooltip05.10.2005Change: Appeal number 
Applicant(s)For all designated states
TEMIC TELEFUNKEN microelectronic GmbH
Theresienstrasse 2
74072 Heilbronn / DE
[N/P]
Former [1993/03]For all designated states
TEMIC TELEFUNKEN microelectronic GmbH
Theresienstrasse 2
D-74072 Heilbronn / DE
Former [1986/41]For all designated states
TELEFUNKEN electronic GmbH
Theresienstrasse 2
D-74072 Heilbronn / DE
Inventor(s)01 / Beneking, Heinz, Prof. Dr. rer. nat.
Waldstrasse 96
D-5100 Aachen / DE
[1986/41]
Representative(s)Maute, Hans-Jürgen
TEMIC TELEFUNKEN microelectronic GmbH Postfach 35 35
74025 Heilbronn / DE
[N/P]
Former [1993/03]Maute, Hans-Jürgen, Dipl.-Ing.
TEMIC TELEFUNKEN microelectronic GmbH Postfach 35 35
D-74025 Heilbronn / DE
Former [1986/41]Maute, Hans-Jürgen, Dipl.-Ing.
TEMIC TELEFUNKEN microelectronic GmbH, Postfach 35 35
D-74025 Heilbronn / DE
Application number, filing date86102757.103.03.1986
[1986/41]
Priority number, dateDE1985350802407.03.1985         Original published format: DE 3508024
[1986/41]
Filing languageDE
Procedural languageDE
PublicationType: A2 Application without search report 
No.:EP0196474
Date:08.10.1986
Language:DE
[1986/41]
Type: A3 Search report 
No.:EP0196474
Date:05.04.1989
Language:DE
[1989/14]
Type: B1 Patent specification 
No.:EP0196474
Date:06.08.1997
Language:DE
[1997/32]
Search report(s)(Supplementary) European search report - dispatched on:EP13.02.1989
ClassificationIPC:H01L29/207, H01L21/205, H01L21/208
[1989/07]
CPC:
H01L29/207 (EP,US)
Former IPC [1986/41]H01L21/20
Designated contracting statesFR,   GB,   IT,   NL [1986/41]
TitleGerman:Halbleiteranordnung aus Verbindungshalbleitermaterial[1986/41]
English:Semiconductor device made of compound semiconductor material[1986/41]
French:Dispositif semi-conducteur constitué de matériau semi-conducteur composé[1986/41]
Examination procedure12.09.1989Examination requested  [1989/45]
24.01.1991Despatch of a communication from the examining division (Time limit: M04)
10.05.1991Reply to a communication from the examining division
23.07.1991Despatch of a communication from the examining division (Time limit: M02)
29.08.1991Reply to a communication from the examining division
25.06.1992Despatch of a communication from the examining division (Time limit: M02)
20.08.1992Reply to a communication from the examining division
21.10.1992Despatch of communication that the application is refused, reason: substantive examination {1}
26.06.1996Despatch of communication of intention to grant (Approval: Yes)
20.08.1996Communication of intention to grant the patent
04.10.1996Fee for grant paid
04.10.1996Fee for publishing/printing paid
Appeal following examination27.11.1992Appeal received No.  T0177/93
13.02.1993Statement of grounds filed
26.06.1996Result of appeal procedure: remittal for grant
26.06.1996Date of oral proceedings
02.07.1996Minutes of oral proceedings despatched
Opposition(s)07.05.1998No opposition filed within time limit [1998/31]
Fees paidRenewal fee
08.02.1988Renewal fee patent year 03
24.02.1989Renewal fee patent year 04
12.03.1990Renewal fee patent year 05
06.03.1991Renewal fee patent year 06
05.03.1992Renewal fee patent year 07
18.03.1993Renewal fee patent year 08
09.03.1994Renewal fee patent year 09
03.03.1995Renewal fee patent year 10
06.03.1996Renewal fee patent year 11
21.05.1997Renewal fee patent year 12
Penalty fee
Additional fee for renewal fee
31.03.199712   M06   Fee paid on   21.05.1997
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Documents cited:Search[X]DE1803731  (PHILIPS NV)
 [A]  - JOURNAL OF CRYSTAL GROWTH, Band 61, 1983, Seiten 417-424, North-Holland Publishing Co.; G. JACOB et al.: "Dislocation-free GaAs and inP crystals by isoelectronic doping"
 [XP]  - APPLIED PHYSICS LETTERS, Band 46, Nr. 7, 1. April 1985, Seiten 668-670, American Institute of Physics, Woodbury, New York, US; H. EHRENREICH et al.: "Mechanism for dislocation density reduction in GaAs crystals by indium addition
The EPO accepts no responsibility for the accuracy of data originating from other authorities; in particular, it does not guarantee that it is complete, up to date or fit for specific purposes.