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Extract from the Register of European Patents

EP About this file: EP0195445

EP0195445 - Semiconductor memory device with an error correction function [Right-click to bookmark this link]
StatusNo opposition filed within time limit
Status updated on  06.08.1994
Database last updated on 24.04.2024
Most recent event   Tooltip06.08.1994No opposition filed within time limitpublished on 28.09.1994 [1994/39]
Applicant(s)For all designated states
Kabushiki Kaisha Toshiba
72, Horikawa-cho, Saiwai-ku Kawasaki-shi
Kanagawa-ken 210-8572 / JP
[N/P]
Former [1986/39]For all designated states
KABUSHIKI KAISHA TOSHIBA
72, Horikawa-cho, Saiwai-ku
Kawasaki-shi, Kanagawa-ken 210, Tokyo / JP
Inventor(s)01 / Ohsawa, Takashi c/o Patent Division
K.K. Toshiba 1-1 Shibaura 1-chome
Minato-ku Tokyo 105 / JP
[1986/39]
Representative(s)Hoffmann, Klaus, et al
Hoffmann Eitle, Patent- und Rechtsanwälte, Postfach 81 04 20
81904 München / DE
[N/P]
Former [1989/17]Hoffmann, Klaus, Dr. rer. nat., et al
Hoffmann, Eitle & Partner Patentanwälte Postfach 81 04 20
D-81904 München / DE
Former [1986/39]Hoffmann, Klaus, Dr. rer. nat.
Hoffmann, Eitle & Partner, Patentanwälte, Postfach 81 04 20
D-81925 München / DE
Application number, filing date86103788.520.03.1986
[1986/39]
Priority number, dateJP1985005651520.03.1985         Original published format: JP 5651585
[1986/39]
Filing languageEN
Procedural languageEN
PublicationType: A2 Application without search report 
No.:EP0195445
Date:24.09.1986
Language:EN
[1986/39]
Type: A3 Search report 
No.:EP0195445
Date:18.01.1989
Language:EN
[1989/03]
Type: B1 Patent specification 
No.:EP0195445
Date:06.10.1993
Language:EN
[1993/40]
Search report(s)(Supplementary) European search report - dispatched on:EP01.12.1988
ClassificationIPC:G06F11/00
[1986/39]
CPC:
G06F11/1008 (EP,US); G06F11/1076 (EP,US)
Designated contracting statesDE,   FR,   GB [1986/39]
TitleGerman:Halbleiterspeichergerät mit einer Korrekturfunktion[1986/39]
English:Semiconductor memory device with an error correction function[1986/39]
French:Dispositif de mémoire à semi-conducteur munie d'une fonction de correction d'erreurs[1986/39]
Examination procedure20.03.1986Examination requested  [1986/39]
09.10.1990Despatch of a communication from the examining division (Time limit: M06)
09.04.1991Reply to a communication from the examining division
29.04.1991Despatch of a communication from the examining division (Time limit: M06)
30.10.1991Reply to a communication from the examining division
01.12.1992Despatch of communication of intention to grant (Approval: Yes)
07.04.1993Communication of intention to grant the patent
01.07.1993Fee for grant paid
01.07.1993Fee for publishing/printing paid
Opposition(s)07.07.1994No opposition filed within time limit [1994/39]
Fees paidRenewal fee
07.03.1988Renewal fee patent year 03
13.03.1989Renewal fee patent year 04
15.03.1990Renewal fee patent year 05
17.12.1990Renewal fee patent year 06
13.03.1992Renewal fee patent year 07
09.03.1993Renewal fee patent year 08
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Documents cited:Search[A]JP57162195  ;
 [X]US4412314  (PROEBSTING ROBERT J [US]);
 [A]GB2075730  (DATA GENERAL CORP);
 [A]US4493081  (SCHMIDT FREDERICK W [US])
 [A]  - PATENT ABSTRACTS OF JAPAN, vol. 7, no. 2 (P-166)[1147], 7th January 1983; & JP-A-57 162 195 (KIYOUSAN SEISAKUSHO K.K.) 05-10-1982, & JP57162195 A 00000000
The EPO accepts no responsibility for the accuracy of data originating from other authorities; in particular, it does not guarantee that it is complete, up to date or fit for specific purposes.