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EP0205139
European procedure
Extract from the Register of European Patents
EP About this file: EP0205139
| EP0205139 - Distributed feedback semiconductor laser device [Right-click to bookmark this link] | Status | No opposition filed within time limit Status updated on 24.07.1993 Database last updated on 11.05.2024 | Most recent event Tooltip | 17.08.1993 | Change - lapse in a contracting state State(s) deleted from list of lapses: DE | published on 06.10.1993 [1993/40] | Applicant(s) | For all designated states NEC Corporation 7-1, Shiba 5-chome Minato-ku Tokyo 108-8001 / JP | [N/P] |
| Former [1986/51] | For all designated states NEC CORPORATION 7-1, Shiba 5-chome Minato-ku Tokyo / JP | Inventor(s) | 01 /
Mito, Ikuo c/o NEC Corporation 7-1, Shiba 5-chome Minato-ku Tokyo 108-01 / JP | 02 /
Yamaguchi, Masayuki c/o NEC Corporation 7-1, Shiba 5-chome Minato-ku Tokyo 108-01 / JP | [1992/38] |
| Former [1986/51] | 01 /
Mito, Ikuo c/o NEC Corporation 33-1, Shiba 5-chome Minato-ku Tokyo / JP | ||
| 02 /
Yamaguchi, Masayuki c/o NEC Corporation 33-1, Shiba 5-chome Minato-ku Tokyo / JP | Representative(s) | Vossius & Partner Patentanwälte Rechtsanwälte mbB Siebertstrasse 3 81675 München / DE | [N/P] |
| Former [1987/15] | VOSSIUS & PARTNER Postfach 86 07 67 D-81634 München / DE | ||
| Former [1986/51] | VOSSIUS & PARTNER Siebertstrasse 4 P.O. Box 86 07 67 D-8000 München 86 / DE | Application number, filing date | 86107823.6 | 09.06.1986 | [1986/51] | Priority number, date | JP19850125449 | 10.06.1985 Original published format: JP 12544985 | JP19850280342 | 13.12.1985 Original published format: JP 28034285 | [1986/51] | Filing language | EN | Procedural language | EN | Publication | Type: | A2 Application without search report | No.: | EP0205139 | Date: | 17.12.1986 | Language: | EN | [1986/51] | Type: | A3 Search report | No.: | EP0205139 | Date: | 18.05.1988 | Language: | EN | [1988/20] | Type: | B1 Patent specification | No.: | EP0205139 | Date: | 23.09.1992 | Language: | EN | [1992/39] | Search report(s) | (Supplementary) European search report - dispatched on: | EP | 28.03.1988 | Classification | IPC: | H01S3/19, H01S3/06 | [1986/51] | CPC: |
H01S5/0625 (EP,US);
H01S5/12 (EP,US);
H01S5/06255 (EP,US);
H01S5/06258 (EP,US);
H01S5/227 (EP,US);
H01S5/2275 (EP,US);
H01S5/2277 (EP,US)
(-)
| Designated contracting states | DE, FR, GB, NL [1986/51] | Title | German: | Halbleiterlaservorrichtung mit verteilter Rückkopplung | [1986/51] | English: | Distributed feedback semiconductor laser device | [1986/51] | French: | Dispositif laser à semi-conducteur à reaction distribuée | [1992/39] |
| Former [1986/51] | Dispositif laser à semi-conducteur à réflecteur distribué | Examination procedure | 09.06.1986 | Examination requested [1986/51] | 04.09.1991 | Despatch of communication of intention to grant (Approval: No) | 11.03.1992 | Despatch of communication of intention to grant (Approval: later approval) | 19.03.1992 | Communication of intention to grant the patent | 24.06.1992 | Fee for grant paid | 24.06.1992 | Fee for publishing/printing paid | Opposition(s) | 24.06.1993 | No opposition filed within time limit [1993/37] | Fees paid | Renewal fee | 29.06.1988 | Renewal fee patent year 03 | 30.06.1989 | Renewal fee patent year 04 | 27.06.1990 | Renewal fee patent year 05 | 28.06.1991 | Renewal fee patent year 06 | 29.06.1992 | Renewal fee patent year 07 |
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| Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Lapses during opposition Tooltip | deleted | [1993/40] |
| Former [1993/28] | DE | 23.09.1992 | Documents cited: | Search | JP5878488 [ ] | [ ] - NINTH EUROPEAN CONFERENCE ON OPTICAL COMMUNICATION - ECOC 83, Geneva, 23rd-26th October 1983, pages 431-434, Elsevier Science Publishers B.V., Amsterdam, NL; TAKESHI KAMIYA et al.: "Multi-electrode semiconductor lasers for coherence length control" | [ ] - ELECTRONICS LETTERS, vol. 20, no. 6, 15th March 1984, pages 233-235, Stevenage, Herts, GB; M. YAMAGUCHI et al.: "Highly efficient single-longitudinal-mode operation of antireflection-coated 1.3mum DFB-DC-PBH LD" | [ ] - PATENT ABSTRACTS OF JAPAN, vol. 7, no. 174 (E-190)[1319], 2nd August 1983; & JP-A-58 78 488 (KOKUSAI DENSHIN DENWA K.K.) 12-05-1983, & JP5878488 A 00000000 | [ ] - ELECTRONICS LETTERS, vol. 21, no. 9, 25th April 1985, pages 367-368, Stevenage, Herts, GB; K. UTAKA et al.: "Longitudinal-mode behaviour of lambda/4-shifted inGaAsP/InP DFB lasers" | [ ] - APPLIED PHYSICS LETTERS, vol. 38, no. 12, June 1981, pages 957-959, American Institute of Physics, New York, US; H. KAWAGUCHI et al.: "1.55-mum narrow planar stripe InGaAsP lasers with deep Zn diffusion" | [ ] - ELECTRONICS LETTRES, vol. 14, no. 6, 16th March 1978, pages 197-198, Stevenage, Herts, GB; S. AKIBA et al.: "Direct modulation of InGaAsP/InP double heterostructure lasers" | [ ] - JOURNAL OF ELECTRONIC ENGINEERING, no. 117, September 76, pages 33-36, Tokyo, JP; K. ITOH et al.: "Semiconductor laser R&D paces industry expectation" | Examination | - ELECTRONICS LETTERS, vol. 14, no. 6, 16th March 1978, pages 197-198, Stevenage, Herts, GB; S. AKIBA et al.: "Direct modulation of InGaAsP/InP double heterostructure lasers" |