-
EP0213299
European procedure
- EP About this file
- EP Legal status
- EP Federated register
- EP Event history
- EP Citations
- EP Patent family
- EP All documents
Extract from the Register of European Patents
EP About this file: EP0213299
| EP0213299 - Method for manufacturing a semiconductor device having an element isolation area [Right-click to bookmark this link] | Status | The application has been withdrawn Status updated on 19.01.1989 Database last updated on 30.07.2024 | Most recent event Tooltip | 07.07.2007 | Change - inventor | published on 08.08.2007 [2007/32] | Applicant(s) | For all designated states Kabushiki Kaisha Toshiba 72, Horikawa-cho, Saiwai-ku Kawasaki-shi Kanagawa-ken 210-8572 / JP | [N/P] |
| Former [1987/11] | For all designated states KABUSHIKI KAISHA TOSHIBA 72, Horikawa-cho, Saiwai-ku Kawasaki-shi, Kanagawa-ken 210, Tokyo / JP | Inventor(s) | 01 /
Kitahara, Koichi c/o Patent Division K.K. Toshiba 1-1 Shibaura 1-chome Minato-ku Tokyo 105 / JP | [1987/11] | Representative(s) | Eitle, Werner, et al Hoffmann Eitle, Patent- und Rechtsanwälte, Postfach 81 04 20 81904 München / DE | [N/P] |
| Former [1987/11] | Eitle, Werner, Dipl.-Ing., et al Hoffmann, Eitle & Partner, Patent- und Rechtsanwälte, Postfach 81 04 20 D-81904 München / DE | Application number, filing date | 86108350.9 | 19.06.1986 | [1987/11] | Priority number, date | JP19850133940 | 21.06.1985 Original published format: JP 13394085 | [1987/11] | Filing language | EN | Procedural language | EN | Publication | Type: | A2 Application without search report | No.: | EP0213299 | Date: | 11.03.1987 | Language: | EN | [1987/11] | Classification | IPC: | H01L21/76 | [1987/11] | CPC: |
H01L21/76297 (EP);
H01L21/187 (EP)
| Designated contracting states | DE, FR, GB [1987/11] | Title | German: | Verfahren zur Herstellung einer Halbleiteranordnung mit einer Isolationszone | [1987/11] | English: | Method for manufacturing a semiconductor device having an element isolation area | [1987/11] | French: | Procédé pour la fabrication d'un dispositif semi-conducteur comportant une région d'isolation | [1987/11] | File destroyed: | 08.05.1995 | Examination procedure | 19.06.1986 | Examination requested [1987/11] | 11.01.1989 | Application withdrawn by applicant [1989/10] | Fees paid | Renewal fee | 14.06.1988 | Renewal fee patent year 03 |
| Opt-out from the exclusive Tooltip competence of the Unified Patent Court | See the Register of the Unified Patent Court for opt-out data | ||
| Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | |||