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EP0220410
European procedure
Extract from the Register of European Patents
EP About this file: EP0220410
| EP0220410 - A dynamic random access memory device having a single-crystal transistor on a trench capacitor structure and a fabrication method therefor [Right-click to bookmark this link] | Status | No opposition filed within time limit Status updated on 10.02.1994 Database last updated on 06.07.2024 | Most recent event Tooltip | 10.02.1994 | No opposition filed within time limit | published on 30.03.1994 [1994/13] | Applicant(s) | For all designated states International Business Machines Corporation New Orchard Road Armonk, NY 10504 / US | [N/P] |
| Former [1987/19] | For all designated states International Business Machines Corporation Old Orchard Road Armonk, N.Y. 10504 / US | Inventor(s) | 01 /
Lu, Nicky Chau-Chun 1424 Trout Brook Street Yorktown Heights New York 10598 / US | [1987/19] | Representative(s) | Burt, Roger James IBM United Kingdom Limited Intellectual Property Department Hursley Park Winchester Hampshire SO21 2JN / GB | [N/P] |
| Former [1993/39] | Burt, Roger James, Dr. IBM United Kingdom Limited Intellectual Property Department Hursley Park Winchester Hampshire SO21 2JN / GB | ||
| Former [1992/07] | Blakemore, Frederick Norman IBM United Kingdom Limited Intellectual Property Department Hursley Park Winchester Hampshire SO21 2JN / GB | ||
| Former [1987/19] | Grant, Iain Murray IBM United Kingdom Limited Intellectual Property Department Hursley Park Winchester Hampshire SO21 2JN / GB | Application number, filing date | 86111645.7 | 22.08.1986 | [1987/19] | Priority number, date | US19850789675 | 21.10.1985 Original published format: US 789675 | [1987/19] | Filing language | EN | Procedural language | EN | Publication | Type: | A2 Application without search report | No.: | EP0220410 | Date: | 06.05.1987 | Language: | EN | [1987/19] | Type: | A3 Search report | No.: | EP0220410 | Date: | 10.05.1989 | Language: | EN | [1989/19] | Type: | B1 Patent specification | No.: | EP0220410 | Date: | 07.04.1993 | Language: | EN | [1993/14] | Search report(s) | (Supplementary) European search report - dispatched on: | EP | 22.03.1989 | Classification | IPC: | H01L27/10, H01L21/82 | [1987/19] | CPC: |
H01L21/743 (EP,US);
H01L27/00 (KR);
H10B12/038 (EP,US);
H01L21/8221 (EP,US);
H10B12/373 (EP,US)
| Designated contracting states | CH, DE, FR, GB, IT, LI, NL, SE [1987/19] | Title | German: | Dynamische Speichervorrichtung mit wahlfreiem Zugriff mit einem monokristallinen Transistor auf einer rillenartigen Kondensatorstruktur und Herstellungsverfahren dafür | [1987/19] | English: | A dynamic random access memory device having a single-crystal transistor on a trench capacitor structure and a fabrication method therefor | [1987/19] | French: | Dispositif de mémoire dynamique à accès aléatoire comprenant un transistor monocristallin sur une structure de condensateur à sillon et son procédé de fabrication | [1987/19] | Examination procedure | 21.08.1987 | Examination requested [1987/42] | 28.11.1991 | Despatch of a communication from the examining division (Time limit: M04) | 19.02.1992 | Reply to a communication from the examining division | 10.07.1992 | Despatch of communication of intention to grant (Approval: Yes) | 07.10.1992 | Communication of intention to grant the patent | 17.10.1992 | Fee for grant paid | 17.10.1992 | Fee for publishing/printing paid | Opposition(s) | 08.01.1994 | No opposition filed within time limit [1994/13] | Fees paid | Renewal fee | 23.08.1988 | Renewal fee patent year 03 | 21.08.1989 | Renewal fee patent year 04 | 20.08.1990 | Renewal fee patent year 05 | 22.08.1991 | Renewal fee patent year 06 | 17.08.1992 | Renewal fee patent year 07 |
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| Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Documents cited: | Search | [A]EP0108390 (HITACHI LTD [JP]); | [AP]EP0167764 (IBM [US]) | [A] - SOLID STATE TECHNOLOGY, vol. 27, no. 9, September 1984, pages 239-243, Port Washington, New York, US; L. JASTRZEBSKI: "Silicon CVD for SOI: principles and possible applications" |