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Extract from the Register of European Patents

EP About this file: EP0224274

EP0224274 - Semiconductor device with protective means against overheating [Right-click to bookmark this link]
StatusNo opposition filed within time limit
Status updated on  13.01.1994
Database last updated on 22.08.2024
Most recent event   Tooltip29.08.2008Change - representativepublished on 01.10.2008  [2008/40]
Applicant(s)For all designated states
NIPPONDENSO CO., LTD.
1-1, Showa-cho Kariya-shi
Aichi-ken / JP
[N/P]
Former [1987/23]For all designated states
NIPPONDENSO CO., LTD.
1-1, Showa-cho
Kariya-shi Aichi-ken / JP
Inventor(s)01 / Tsuzuki, Yukio
15 Azabishamon Ooazahishiike Kota-cho
Nukata-gun Aichi-ken / JP
02 / Yamaoka, Masami
195 Shindandome Sasame-cho
Anjo-shi Aichi-ken / JP
[1987/23]
Representative(s)Winter, Brandl - Partnerschaft mbB
Alois-Steinecker-Straße 22
85354 Freising / DE
[N/P]
Former [2008/40]Winter, Brandl, Fürniss, Hübner Röss, Kaiser, Polte Partnerschaft Patent- und Rechtsanwaltskanzlei
Alois-Steinecker-Strasse 22
85354 Freising / DE
Former [1991/46]KUHNEN, WACKER & PARTNER
Patent- und Rechtsanwaltsbüro, Alois-Steineckerstrasse 22
D-85354 Freising / DE
Former [1987/23]KUHNEN, WACKER & PARTNER
Alois-Steinecker-Strasse 22
D-85354 Freising / DE
Application number, filing date86116560.328.11.1986
[1987/23]
Priority number, dateJP1985027014129.11.1985         Original published format: JP 27014185
[1987/23]
Filing languageEN
Procedural languageEN
PublicationType: A2 Application without search report 
No.:EP0224274
Date:03.06.1987
Language:EN
[1987/23]
Type: A3 Search report 
No.:EP0224274
Date:17.01.1990
Language:EN
[1990/03]
Type: B1 Patent specification 
No.:EP0224274
Date:10.03.1993
Language:EN
[1993/10]
Search report(s)(Supplementary) European search report - dispatched on:EP29.11.1989
ClassificationIPC:H01L27/02, H01L23/34, H01L23/58
[1993/10]
CPC:
H01L23/34 (EP,US); H01L27/0248 (EP,US); H01L29/7803 (EP,US);
H01L29/7804 (EP,US); H01L29/7808 (EP,US); H01L2924/0002 (EP,US)
C-Set:
H01L2924/0002, H01L2924/00 (EP,US)
Former IPC [1990/03]H01L27/02, H01L23/34, H01L23/56
Former IPC [1987/23]H01L23/56
Designated contracting statesDE,   FR,   GB,   IT [1987/23]
TitleGerman:Halbleiterbauelement mit Überhitzungsschutzmittel[1987/23]
English:Semiconductor device with protective means against overheating[1987/23]
French:Dispositif à semi-conducteur ayant des moyens le protégeant contre la surchauffe[1987/23]
Examination procedure03.05.1990Examination requested  [1990/27]
08.05.1991Despatch of a communication from the examining division (Time limit: M04)
18.09.1991Reply to a communication from the examining division
29.10.1991Despatch of a communication from the examining division (Time limit: M02)
23.12.1991Reply to a communication from the examining division
16.06.1992Despatch of communication of intention to grant (Approval: Yes)
03.09.1992Communication of intention to grant the patent
09.12.1992Fee for grant paid
09.12.1992Fee for publishing/printing paid
Opposition(s)11.12.1993No opposition filed within time limit [1994/09]
Fees paidRenewal fee
14.11.1988Renewal fee patent year 03
09.11.1989Renewal fee patent year 04
20.11.1990Renewal fee patent year 05
11.11.1991Renewal fee patent year 06
09.10.1992Renewal fee patent year 07
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Documents cited:Search[A]JP57040977  ;
 [A]EP0060635  (HITACHI LTD [JP]);
 [A]DE3007403  (ATES COMPONENTI ELETTRON);
 [A]EP0000863  (IBM [US])
 [A]  - IBM TECHNICAL DISCLOSURE BULLETIN. vol. 21, no. 2, 01 July 1978, NEW YORK US pages 677 - 678; F. A. PERNER ET AL: "POWER HIGH VOLTAGE/LOW VOLTAGE INTEGRATED CIRCUIT STRUCTURE"
 [A]  - PATENT ABSTRACTS OF JAPAN vol. 6, no. 111 (E-114)(989) 22 June 1982, & JP-A-57 040977 (NIPPON DENSO) 06 March 1982,, & JP57040977 A 19820306
The EPO accepts no responsibility for the accuracy of data originating from other authorities; in particular, it does not guarantee that it is complete, up to date or fit for specific purposes.