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EP0227076
European procedure
Extract from the Register of European Patents
EP About this file: EP0227076
| EP0227076 - Method of manufacturing monocrystal thin-film [Right-click to bookmark this link] | Status | No opposition filed within time limit Status updated on 17.04.1993 Database last updated on 19.10.2024 | Most recent event Tooltip | 12.06.2009 | Change - representative | published on 15.07.2009 [2009/29] | Applicant(s) | For all designated states AGENCY OF INDUSTRIAL SCIENCE AND TECHNOLOGY 3-1, Kasumigaseki 1-chome Chiyoda-ku Tokyo / JP | [N/P] |
| Former [1987/27] | For all designated states AGENCY OF INDUSTRIAL SCIENCE AND TECHNOLOGY 3-1, 1-chome, Kasumigaseki Chiyoda-ku Tokyo / JP | Inventor(s) | 01 /
Awane, Katunobu 15-2, Shinasahigaoka Ikoma-shi Nara-ken / JP | 02 /
Koba, Masayoshi 51-14-5, Shichijonishimachi 1-chome Nara-shi Nara-ken / JP | 03 /
Miyajima, Toshiaki 6-13-13, Tatsutanishi Ikaruga-cho Ikoma-gun Nara-Ken / JP | 04 /
Maekawa, Masashi 1-1-602, Kunimi-cho Saidaiji Nara-shi Nara-ken / JP | [1987/27] | Representative(s) | dompatent von Kreisler Selting Werner - Partnerschaft von Patent- und Rechtsanwälten mbB Deichmannhaus am Dom Bahnhofsvorplatz 1 50667 Köln / DE | [N/P] |
| Former [2009/29] | von Kreisler, Alek, et al Patentanwälte Von Kreisler-Selting-Werner Postfach 10 22 41 50462 Köln / DE | ||
| Former [1987/27] | von Kreisler, Alek, Dipl.-Chem., et al Patentanwälte von Kreisler-Selting-Werner Postfach 10 22 41 D-50462 Köln / DE | Application number, filing date | 86117799.6 | 19.12.1986 | [1987/27] | Priority number, date | JP19850285438 | 20.12.1985 Original published format: JP 28543885 | JP19860068554 | 28.03.1986 Original published format: JP 6855486 | JP19860225900 | 26.09.1986 Original published format: JP 22590086 | [1987/27] | Filing language | EN | Procedural language | EN | Publication | Type: | A2 Application without search report | No.: | EP0227076 | Date: | 01.07.1987 | Language: | EN | [1987/27] | Type: | A3 Search report | No.: | EP0227076 | Date: | 24.05.1989 | Language: | EN | [1989/21] | Type: | B1 Patent specification | No.: | EP0227076 | Date: | 17.06.1992 | Language: | EN | [1992/25] | Search report(s) | (Supplementary) European search report - dispatched on: | EP | 04.04.1989 | Classification | IPC: | H01L21/268, C30B1/06 | [1989/21] | CPC: |
H01L21/02691 (EP,US);
H01L21/02667 (US);
H01L21/02488 (EP,US);
H01L21/02494 (EP,US);
H01L21/02532 (EP,US);
H01L21/02598 (EP,US);
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| Former IPC [1987/27] | H01L21/208, H01L21/268 | Designated contracting states | DE, FR, GB [1987/27] | Title | German: | Verfahren zur Herstellung einer monokristallinen dünnen Schicht | [1987/27] | English: | Method of manufacturing monocrystal thin-film | [1987/27] | French: | Procédé pour la fabrication d'une couche mince monocristalline | [1987/27] | Examination procedure | 19.12.1986 | Examination requested [1987/27] | 31.01.1991 | Despatch of a communication from the examining division (Time limit: M04) | 25.05.1991 | Reply to a communication from the examining division | 09.08.1991 | Despatch of communication of intention to grant (Approval: Yes) | 17.12.1991 | Communication of intention to grant the patent | 05.03.1992 | Fee for grant paid | 05.03.1992 | Fee for publishing/printing paid | Opposition(s) | 18.03.1993 | No opposition filed within time limit [1993/23] | Fees paid | Renewal fee | 28.12.1988 | Renewal fee patent year 03 | 22.12.1989 | Renewal fee patent year 04 | 20.12.1990 | Renewal fee patent year 05 | 20.12.1991 | Renewal fee patent year 06 |
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| Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Documents cited: | Search | [X]FR2537607 (MITSUBISHI ELECTRIC CORP [JP]) | [X] - APPLIED PHYSICS LETTERS vol. 38, no. 4, February 1981, pages 248-250, NewYork, US; T.L. MAGEE et al.: "Seeded and limited seeding regrowth of Si over Si02 by cw laser annealing" | [A] - JAPANESE JOURNAL OF APPLIED PHYSICS. SUPPLEMENTS vol. 21, supplement 1,1982, pages 193-198, Tokyo, JP; M. TAMURA et al.: "Laser-Induced Lateral,Vertically-Seeded Epitaxial Regrowth of Deposited Si Films over Varios Si02 Patterns" | [A] - JOURNAL OF THE ELECTROCHEMICAL SOCIETY vol. 132, no. 8, August 1985, pages 1919-1924, Manchester, New Hampshire, US; J.R. Davies et al.: "Characterization of the Dual E-Beam Technique for Recrystallizing Polysilicon Film" | [XP] - JAPANESE JOURNAL OF APPLIED PHYSICS; SUPPLEMENTS 18th International Conference on Solid State Devices and Materials, Tokyo, JP, 20th-22nd August 1986, pages 565-568, Tokyo, JP; K. SUGAHARA: "Orientation Control of SOI Film by Laser Recrystallization" |