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EP0219995
European procedure
Extract from the Register of European Patents
EP About this file: EP0219995
| EP0219995 - Gate turn-off thyristor with independent turn-on/off controlling transistors [Right-click to bookmark this link] | Status | No opposition filed within time limit Status updated on 05.01.1995 Database last updated on 31.05.2024 | Most recent event Tooltip | 23.11.2007 | Lapse of the patent in a contracting state | published on 26.12.2007 [2007/52] | Applicant(s) | For all designated states Kabushiki Kaisha Toshiba 72, Horikawa-cho, Saiwai-ku Kawasaki-shi Kanagawa-ken 210-8572 / JP | [N/P] |
| Former [1987/18] | For all designated states KABUSHIKI KAISHA TOSHIBA 72, Horikawa-cho, Saiwai-ku Kawasaki-shi, Kanagawa-ken 210, Tokyo / JP | Inventor(s) | 01 /
Nakagawa, Akio Patent Division K.K. Toshiba 1-1 Shibaura 1-chome Minato-ku Tokyo 105 / JP | 02 /
Shinohe, Takashi Patent Division K.K. Toshiba 1-1 Shibaura 1-chome Minato-ku Tokyo 105 / JP | [1987/18] | Representative(s) | Freed, Arthur Woolf, et al Marks & Clerk Incorporating Edward Evans Barker 90 Long Acre London WC2E 9RA / GB | [N/P] |
| Former [1987/18] | Freed, Arthur Woolf, et al MARKS & CLERK, 57-60 Lincoln's Inn Fields London WC2A 3LS / GB | Application number, filing date | 86307495.1 | 30.09.1986 | [1987/18] | Priority number, date | JP19850214578 | 30.09.1985 Original published format: JP 21457885 | JP19860095418 | 24.04.1986 Original published format: JP 9541886 | [1987/18] | Filing language | EN | Procedural language | EN | Publication | Type: | A2 Application without search report | No.: | EP0219995 | Date: | 29.04.1987 | Language: | EN | [1987/18] | Type: | A3 Search report | No.: | EP0219995 | Date: | 29.11.1989 | Language: | EN | [1989/48] | Type: | B1 Patent specification | No.: | EP0219995 | Date: | 02.03.1994 | Language: | EN | [1994/09] | Search report(s) | (Supplementary) European search report - dispatched on: | EP | 10.10.1989 | Classification | IPC: | H01L29/10, H01L29/74, H01L29/60, H01L29/52, H01L29/08 | [1987/18] | CPC: |
H01L29/7455 (EP,US);
H01L29/7428 (EP,US);
H01L29/749 (EP,US)
| Designated contracting states | DE, IT [1987/18] | Title | German: | Mittels Steuerelektrode abschaltbarer Thyristor mit unabhängigen Zünd-/Lösch-Kontrolltransistoren | [1987/18] | English: | Gate turn-off thyristor with independent turn-on/off controlling transistors | [1987/18] | French: | Thyristor à commande d'extinction comportant des transistors d'allumage/extinction indépendants | [1987/18] | Examination procedure | 09.02.1988 | Examination requested [1988/15] | 23.08.1990 | Despatch of a communication from the examining division (Time limit: M04) | 24.12.1990 | Reply to a communication from the examining division | 19.09.1991 | Despatch of a communication from the examining division (Time limit: M06) | 28.01.1992 | Reply to a communication from the examining division | 08.10.1992 | Date of oral proceedings | 22.10.1992 | Despatch of a communication from the examining division (Time limit: M04) | 22.10.1992 | Minutes of oral proceedings despatched | 04.01.1993 | Reply to a communication from the examining division | 12.05.1993 | Despatch of communication of intention to grant (Approval: Yes) | 25.08.1993 | Communication of intention to grant the patent | 17.11.1993 | Fee for grant paid | 17.11.1993 | Fee for publishing/printing paid | Opposition(s) | 03.12.1994 | No opposition filed within time limit [1995/08] | Fees paid | Renewal fee | 14.09.1988 | Renewal fee patent year 03 | 11.09.1989 | Renewal fee patent year 04 | 21.09.1990 | Renewal fee patent year 05 | 09.09.1991 | Renewal fee patent year 06 | 15.09.1992 | Renewal fee patent year 07 | 16.09.1993 | Renewal fee patent year 08 |
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| Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Lapses during opposition Tooltip | IT | 02.03.1994 | [1999/42] | Documents cited: | Search | [A]JP60053078 ; | [A]EP0014435 (SIEMENS AG [DE]); | [A]EP0017980 (SIEMENS AG [DE]) | [A] - PATENT ABSTRACTS OF JAPAN, Vol. 9, No. 181 (E-331)(1904), July 26, 1985; & JP-A-60 053 078 (TOSHIBA K.K.) 26-03-1985, & JP60053078 A 00000000 | [A] - Siemens Forschungs- und Entwicklungsberichte, Vol. 14, No. 2, March/April 1985, pages 45-49; Berlin, DE, M. STOISIEK et al.: "Power devices with MOS-controlled emitter shorts". | [A] - IEEE Transactions on Electron Devices, Vol. ED-27, No. 2, February 1980, pages 380-387; IEEE, New York, US, J.D. PLUMMER et al.: "Insulated-gate planar thyristors: I-Structure and basic operation". | Examination | - IEEJ Annual Meeting Proceedings, 1984, page 443 | - IEEJ IEPC'83, 1983, pages 42-53 | - IEDM 1984, pages 282-285 | - IEDM 1985, pages 158-161 | - IEDM 1985, pages 118-121 | - IEDM 1987, pages 666-669 | - IEDM 1988, pages 618-621 | - IEDM 1989, pages 297-300 | - IEDM 1991, pages 149-152 |