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EP0262356
European procedure
Extract from the Register of European Patents
EP About this file: EP0262356
| EP0262356 - Process for manufacturing a high-voltage resistant PN junction [Right-click to bookmark this link] | Status | No opposition filed within time limit Status updated on 03.02.1994 Database last updated on 06.07.2024 | Most recent event Tooltip | 03.02.1994 | No opposition filed within time limit | published on 23.03.1994 [1994/12] | Applicant(s) | For all designated states SIEMENS AKTIENGESELLSCHAFT Werner-von-Siemens-Str. 1 DE-80333 München / DE | [N/P] |
| Former [1988/14] | For all designated states SIEMENS AKTIENGESELLSCHAFT Wittelsbacherplatz 2 D-80333 München / DE | Inventor(s) | 01 /
Kuhnert, Reinhold, Dr. Dipl.-Phys. Dachauer Strasse 140 d D-8000 München 2 / DE | 02 /
Schulze, Hans-Joachim, Dr. Dipl.-Phys. Ringstrasse 16 D-8011 Anzing / DE | [1988/14] | Application number, filing date | 87111702.4 | 12.08.1987 | [1988/14] | Priority number, date | DE19863633188 | 30.09.1986 Original published format: DE 3633188 | [1988/14] | Filing language | DE | Procedural language | DE | Publication | Type: | A2 Application without search report | No.: | EP0262356 | Date: | 06.04.1988 | Language: | DE | [1988/14] | Type: | A3 Search report | No.: | EP0262356 | Date: | 20.09.1989 | Language: | DE | [1989/38] | Type: | B1 Patent specification | No.: | EP0262356 | Date: | 31.03.1993 | Language: | DE | [1993/13] | Search report(s) | (Supplementary) European search report - dispatched on: | EP | 02.08.1989 | Classification | IPC: | H01L21/225, H01L21/306, H01L29/06 | [1988/14] | CPC: |
H01L29/0615 (EP,US);
H01L21/0334 (EP,US);
H01L21/2252 (EP,US);
Y10S438/965 (EP,US)
| Designated contracting states | BE, CH, DE, FR, GB, IT, LI, SE [1988/14] | Title | German: | Verfahren zur Herstellung eines pn-Übergangs hoher Spannungsfestigkeit | [1988/14] | English: | Process for manufacturing a high-voltage resistant PN junction | [1988/14] | French: | Méthode de fabrication d'une jonction P-N à haute tenue en tension | [1988/14] | Examination procedure | 09.03.1990 | Examination requested [1990/18] | 06.12.1991 | Despatch of a communication from the examining division (Time limit: M04) | 14.04.1992 | Reply to a communication from the examining division | 27.05.1992 | Despatch of communication of intention to grant (Approval: Yes) | 02.10.1992 | Communication of intention to grant the patent | 16.12.1992 | Fee for grant paid | 16.12.1992 | Fee for publishing/printing paid | Opposition(s) | 04.01.1994 | No opposition filed within time limit [1994/12] | Fees paid | Renewal fee | 30.08.1989 | Renewal fee patent year 03 | 28.08.1990 | Renewal fee patent year 04 | 20.12.1990 | Renewal fee patent year 05 | 24.08.1992 | Renewal fee patent year 06 |
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| Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Documents cited: | Search | [Y]USB480292I ; | [Y]EP0176778 (SIEMENS AG [DE]); | [A]US4450469 (YAMAMOTO TAKESKI [JP]); | [A]GB2131603 (PHILIPS ELECTRONIC ASSOCIATED) | [A] - INTERNATIONAL ELECTRON DEVICES MEETING, Washington, D.C., 1.-4. Dezember 1985, Seiten 154-157, IEEE, New York, US; R. STENGL et al.: "Variation of lateral doping - A new concept to avoid high voltage breakdown of planar junctions" |