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Extract from the Register of European Patents

EP About this file: EP0241991

EP0241991 - Field effect transistor having a membrane overlying the gate insulator [Right-click to bookmark this link]
StatusThe application has been withdrawn
Status updated on  19.01.1989
Database last updated on 11.09.2024
Most recent event   Tooltip07.07.2007Change - inventorpublished on 08.08.2007  [2007/32]
Applicant(s)For all designated states
Sentron v.o.f.
Oosteinde 8
NL-9301 LJ Roden / NL
[1987/43]
Inventor(s)01 / Schreurs, Joannes Peter Gerardus Maria
Roderweg 72
NL-9301 RG Roden / NL
02 / Talma, Auke Gerardus
't Zuden 18
NL-9351 CV Leek / NL
[1987/43]
Representative(s)Smulders, Theodorus A.H.J., et al
Vereenigde Postbus 87930
2508 DH Den Haag / NL
[N/P]
Former [1987/43]Smulders, Theodorus A.H.J., Ir., et al
Vereenigde Octrooibureaux Nieuwe Parklaan 97
NL-2587 BN 's-Gravenhage / NL
Application number, filing date87200648.106.04.1987
[1987/43]
Priority number, dateNL1986000087207.04.1986         Original published format: NL 8600872
[1987/43]
Filing languageEN
Procedural languageEN
PublicationType: A2 Application without search report 
No.:EP0241991
Date:21.10.1987
Language:EN
[1987/43]
ClassificationIPC:G01N27/00
[1987/43]
CPC:
G01N27/414 (EP)
Designated contracting statesDE,   FR,   GB,   IT,   NL [1987/43]
TitleGerman:Feldeffekttransistor mit einer Membrane auf dem Torisolierstoff[1987/43]
English:Field effect transistor having a membrane overlying the gate insulator[1987/43]
French:Transistor à effet de champ ayant une membrane par-dessus l'isolant de porte[1987/43]
File destroyed:08.05.1995
Examination procedure18.01.1989Application withdrawn by applicant  [1989/10]
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