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EP0263690
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EP About this file: EP0263690
| EP0263690 - A distributed feedback semiconductor laser device [Right-click to bookmark this link] | Status | The application is deemed to be withdrawn Status updated on 20.08.1991 Database last updated on 09.04.2026 | Most recent event Tooltip | 07.07.2007 | Change - inventor | published on 08.08.2007 [2007/32] | Applicant(s) | For all designated states Sharp Kabushiki Kaisha 22-22 Nagaike-cho Abeno-ku Osaka-shi Osaka-fu 545-0013 / JP | [N/P] |
| Former [1988/15] | For all designated states SHARP KABUSHIKI KAISHA 22-22 Nagaike-cho Abeno-ku Osaka 545 / JP | Inventor(s) | 01 /
Yoshida, Toshihiko 2613-1 Ichinomoto-cho Tenri-shi Nara-ken / JP | 02 /
Takiguchi, Haruhisa 7-98 Aoyama Nara-shi Nara-ken / JP | 03 /
Kaneiwa, Shinji 2-301 Katsuragi-cho Nara-shi Nara-ken / JP | 04 /
Kudo, Hiroaki 2613-1 Ichinomoto-cho Tenri-shi Nara-ken / JP | [1988/15] | Representative(s) | Huntingford, David Ian, et al W.P. Thompson & Co. Coopers Building Church Street Liverpool L1 3AB / GB | [N/P] |
| Former [1988/15] | Huntingford, David Ian, et al W.P. THOMPSON & CO. Coopers Building Church Street Liverpool L1 3AB / GB | Application number, filing date | 87308877.7 | 07.10.1987 | [1988/15] | Priority number, date | JP19860239480 | 08.10.1986 Original published format: JP 23948086 | [1988/15] | Filing language | EN | Procedural language | EN | Publication | Type: | A2 Application without search report | No.: | EP0263690 | Date: | 13.04.1988 | Language: | EN | [1988/15] | Type: | A3 Search report | No.: | EP0263690 | Date: | 05.04.1989 | Language: | EN | [1989/14] | Search report(s) | (Supplementary) European search report - dispatched on: | EP | 16.02.1989 | Classification | IPC: | H01S3/06, H01S3/08, H01S3/19 | [1988/15] | CPC: |
H01S5/12 (EP,US);
H01S5/1082 (EP,US);
H01S5/4031 (EP,US)
| Designated contracting states | DE, GB, NL [1988/15] | Title | German: | Halbleiterlaservorrichtung mit verteilter Rückkopplung | [1988/15] | English: | A distributed feedback semiconductor laser device | [1988/15] | French: | Dispositif laser à semi-conducteur à réflecteur distribué | [1988/15] | File destroyed: | 02.03.1998 | Examination procedure | 15.10.1987 | Examination requested [1988/15] | 23.11.1990 | Despatch of a communication from the examining division (Time limit: M04) | 04.04.1991 | Application deemed to be withdrawn, date of legal effect [1991/41] | 08.05.1991 | Despatch of communication that the application is deemed to be withdrawn, reason: reply to the communication from the examining division not received in time [1991/41] | Fees paid | Renewal fee | 09.10.1989 | Renewal fee patent year 03 | 12.10.1990 | Renewal fee patent year 04 |
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| Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Documents cited: | Search | JP6016086 | JP5810882 | JP5286786 | PATENT ABSTRACTS OF JAPAN, vol. 9, no. 173 (E-329)[1896], 18th July 1985; & JP-A-60 16 086 (NIPPON DENKI K.K.) 12-03-1985 | APPLIED PHYSICS LETTERS, vol. 47, no. 1, 1st July 1985, pages 9-11, American Institute of Physics, Woodbury, New York, US; J. SALZMAN et al.: "Tilted-mirror semiconductor lasers" | IEEE JOURNAL OF QUANTUM ELECTRONICS, vol. QE-16, no. 10, October 1980, pages 1039-1044, IEEE, New York, US; H.-H. HSIEH et al.: "Liquid-phase epitaxy grown PbSnTe distributed feedback laser diodes with broad continuous single-mode tuning range" | PATENT ABSTRACTS OF JAPAN, vol. 7, no. 84 (E-169)[1229], 8th April 1983; & JP-A-58 10 882 (KOKUSAI DENSHIN DENWA K.K.) 21-01-1983 | PATENT ABSTRACTS OF JAPAN, vol. 1, no. 146, 26th November 1977, page 7554 E 77; & JP-A-52 86 786 (TOKYO SHIBAURA DENKI K.K.) 19-07-1977 |