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EP0256904
European procedure
Extract from the Register of European Patents
EP About this file: EP0256904
| EP0256904 - A method of fabricating high performance BiCMOS structures having poly emitters and silicided bases [Right-click to bookmark this link] | Status | No opposition filed within time limit Status updated on 03.12.1992 Database last updated on 19.10.2024 | Most recent event Tooltip | 03.12.1992 | No opposition filed within time limit | published on 20.01.1993 [1993/03] | Applicant(s) | For all designated states FAIRCHILD SEMICONDUCTOR CORPORATION 10400 Ridgeview Court P.O. Box 1500 Cupertino, California 95014 / US | [N/P] |
| Former [1989/35] | For all designated states FAIRCHILD SEMICONDUCTOR CORPORATION 10400 Ridgeview Court P.O. Box 1500 Cupertino, California 95014 / US | ||
| Former [1988/08] | For all designated states FAIRCHILD SEMICONDUCTOR CORPORATION 10400 Ridgeview Court P.O. Box 1500 Cupertino California 95014 / US | Inventor(s) | 01 /
Tuntasood, Prateep 3077 Centerwood Way San Jose California 95148 / US | 02 /
Manoliu, Juliana 1431 Arcadia Place Palo Alto California 94303 / US | [1988/08] | Representative(s) | Sparing Röhl Henseler Postfach 14 04 43 40074 Düsseldorf / DE | [N/P] |
| Former [1989/49] | Sparing Röhl Henseler Patentanwälte Postfach 14 04 43 D-40074 Düsseldorf / DE | ||
| Former [1988/34] | Dipl.-Ing. H. Marsch Dipl.-Ing. K. Sparing Dipl.-Phys.Dr. W.H. Röhl Patentanwälte Rethelstrasse 123 D-4000 Düsseldorf 1 / DE | ||
| Former [1988/08] | Chareyron, Lucien Service Brevets Patent Department Etudes et Productions Schlumberger BP 202 F-92142 Clamart Cédex / FR | Application number, filing date | 87401630.6 | 10.07.1987 | [1988/08] | Priority number, date | US19860887007 | 16.07.1986 Original published format: US 887007 | [1988/08] | Filing language | EN | Procedural language | EN | Publication | Type: | A1 Application with search report | No.: | EP0256904 | Date: | 24.02.1988 | Language: | EN | [1988/08] | Type: | B1 Patent specification | No.: | EP0256904 | Date: | 29.01.1992 | Language: | EN | [1992/05] | Search report(s) | (Supplementary) European search report - dispatched on: | EP | 26.11.1987 | Classification | IPC: | H01L21/82, // H01L21/74 | [1988/08] | CPC: |
H01L27/0623 (EP,US);
H01L21/74 (EP,US);
H01L21/8249 (EP,US);
Y10S257/90 (EP,US)
| Designated contracting states | DE, FR, GB, IT, NL [1988/08] | Title | German: | Verfahren zur Herstellung von BiCMOS-Strukturen von hoher Leistungsfähigkeit mit Polysilizium-Emittern und Transistorbasen aus Siliziden | [1988/08] | English: | A method of fabricating high performance BiCMOS structures having poly emitters and silicided bases | [1988/08] | French: | Méthode pour fabriquer des structures BiCMOS à haute performance ayant des émetteurs en polysilicium et des bases silicidées | [1988/08] | Examination procedure | 23.08.1988 | Examination requested [1988/43] | 14.09.1990 | Despatch of a communication from the examining division (Time limit: M04) | 11.01.1991 | Reply to a communication from the examining division | 04.06.1991 | Despatch of communication of intention to grant (Approval: Yes) | 30.07.1991 | Communication of intention to grant the patent | 08.10.1991 | Fee for grant paid | 08.10.1991 | Fee for publishing/printing paid | Opposition(s) | 30.10.1992 | No opposition filed within time limit [1993/03] | Fees paid | Renewal fee | 11.07.1989 | Renewal fee patent year 03 | 03.07.1990 | Renewal fee patent year 04 | 26.06.1991 | Renewal fee patent year 05 |
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| Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Documents cited: | Search | [AD]US4484388 (IWASAKI HIROSHI [JP]); | [A]FR2134360 (IBM) |