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EP0266268
European procedure
Extract from the Register of European Patents
EP About this file: EP0266268
| EP0266268 - Method of depositing an insulating layer on a III-V material substrate by chemical vapour deposition with thermal irradiation, use in the production of an MIS structure [Right-click to bookmark this link] | Status | No opposition filed within time limit Status updated on 27.05.1993 Database last updated on 07.06.2024 | Most recent event Tooltip | 27.05.1993 | No opposition filed within time limit | published on 14.07.1993 [1993/28] | Applicant(s) | For all designated states Nissim, Yves 14, rue des Pavillons F-92800 Puteaux / FR | For all designated states BENSOUSSAN, Marcel 881 Cours Aquitaine F-92100 Boulogne / FR | [1988/18] | Inventor(s) | 01 /
Nissim, Yves 14, rue des Pavillons F-92800 Puteaux / FR | 02 /
Bensoussan, Marcel 991 Cours Aquitaine F-92100 Boulogne / FR | [1988/18] | Representative(s) | Mongrédien, André, et al c/o BREVATOME 25, rue de Ponthieu F-75008 Paris / FR | [1988/18] | Application number, filing date | 87402397.1 | 23.10.1987 | [1988/18] | Priority number, date | FR19860014896 | 27.10.1986 Original published format: FR 8614896 | [1988/18] | Filing language | FR | Procedural language | FR | Publication | Type: | A1 Application with search report | No.: | EP0266268 | Date: | 04.05.1988 | Language: | FR | [1988/18] | Type: | B1 Patent specification | No.: | EP0266268 | Date: | 22.07.1992 | Language: | FR | [1992/30] | Search report(s) | (Supplementary) European search report - dispatched on: | EP | 03.03.1988 | Classification | IPC: | H01L21/314, H01L21/316, H01L21/318, H01L21/28 | [1988/18] | CPC: |
H01L29/66522 (EP,US);
H01L21/02112 (EP,US);
H01L21/02164 (EP,US);
H01L21/0217 (EP,US);
H01L21/02247 (EP,US);
H01L21/02255 (EP,US);
H01L21/02271 (EP,US);
H01L21/02312 (EP,US);
H01L21/28264 (EP,US);
| Designated contracting states | DE, FR, GB [1988/18] | Title | German: | Chemischer Dampfniederschlag mit Wärmestrahlung von einer Isolierschicht auf ein Substrat aus III-V-Material, Verwendung zur Herstellung einer MIS-Struktur | [1988/18] | English: | Method of depositing an insulating layer on a III-V material substrate by chemical vapour deposition with thermal irradiation, use in the production of an MIS structure | [1988/18] | French: | Procédé de dépot en phase vapeur à flash thermique d'une couche isolante sur un substrat en matériau III-V, application à la fabrication d'une structure MIS | [1992/30] |
| Former [1988/18] | Procédé de dépot en phase vapeur à flash thermique d'une couche isolante sur un substrat en matériau III-V, application à la fabrication d'une structure mis | Examination procedure | 06.10.1988 | Examination requested [1988/48] | 11.12.1990 | Despatch of a communication from the examining division (Time limit: M04) | 30.03.1991 | Reply to a communication from the examining division | 08.10.1991 | Despatch of communication of intention to grant (Approval: Yes) | 22.01.1992 | Communication of intention to grant the patent | 09.03.1992 | Fee for grant paid | 09.03.1992 | Fee for publishing/printing paid | Opposition(s) | 23.04.1993 | No opposition filed within time limit [1993/28] | Fees paid | Renewal fee | 20.10.1989 | Renewal fee patent year 03 | 19.10.1990 | Renewal fee patent year 04 | 18.10.1991 | Renewal fee patent year 05 |
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| Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Documents cited: | Search | [Y]JP5710240 ; | [A]US4371587 (PETERS JOHN W); | [A]US4532695 (SCHUERMEYER FRITZ L [US]); | [A]WO8605320 (SONY CORP [JP]) | [X] - EXTENDED ABSTRACTS OF THE 16TH (1984 INTERNATIONAL) CONFERENCE ON SOLID STATE DEVICES AND MATERIALS, Kobe, 30 août - 1 septembre 1984, pages 663-666, Tokyo, JP; N. HAYAFUJI et al.: "Photo-CVD dielectric films on InP" | [Y] - PATENT ABSTRACTS OF JAPAN, vol 6, no. 67 (E-104)[945], 28 avril 1982; & JP-A-57 10 240 (SONY K.K.) 19-01-1982, & JP5710240 A 00000000 | [Y] - REVUE DE PHYSIQUE APPLIQUEE, vol. 19, no. 2, février 1984, pages 155-159, Orsay, FR; R. CARMONA et al.: "The rôle of plasma oxide in InP MIS structures" | [A] - JOURNAL OF THE ELECTROCHEMICAL SOCIETY, vol. 124, no. 11, novembre 1977, pages 1781-1784; K.V. VAIDYANATHAN et al.: "Study of encapsulants for annealing GaAs" | [A] - THIN SOLID FILMS, vol. 64, no. 1, novembre 1979, pages 49-55, Elsevier Sequoia S.A., Lausanne, CH; C.W. WILMSEN et al.: "Interface formation of deposited insulator layers on GaAs and InP" | [A] - APPLIED PHYSICS LETTERS, vol. 42, no. 11, 1 juin 1983, pages 950-952, American Institute of Physics, New York, US; F.H.P.M. HABRAKEN et al.: "Surface and interface nitridation of thin polycrystalline silicon films" |