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Extract from the Register of European Patents

EP About this file: EP0287120

EP0287120 - Semiconductor memory device having improved sense amplifier arrangement [Right-click to bookmark this link]
StatusNo opposition filed within time limit
Status updated on  06.01.1994
Database last updated on 02.07.2024
Most recent event   Tooltip06.01.1994No opposition filed within time limitpublished on 23.02.1994 [1994/08]
Applicant(s)For all designated states
NEC Corporation
7-1, Shiba 5-chome Minato-ku
Tokyo 108-8001 / JP
[N/P]
Former [1988/42]For all designated states
NEC CORPORATION
7-1, Shiba 5-chome Minato-ku
Tokyo / JP
Inventor(s)01 / Hannai, Seiichi
c/o NEC Corporation 7-1, Shiba 5-chome
Minato-ku Tokyo / JP
[1993/09]
Former [1988/42]01 / Hannai, Seiichi
c/o NEC Corporation 33-1, Shiba 5-chome
Minato-ku Tokyo / JP
Representative(s)Glawe, Delfs, Moll
Partnerschaft mbB von
Patent- und Rechtsanwälten
Postfach 26 01 62
80058 München / DE
[N/P]
Former [1988/42]Glawe, Delfs, Moll & Partner
Patentanwälte Postfach 26 01 62
D-80058 München / DE
Application number, filing date88106063.615.04.1988
[1988/42]
Priority number, dateJP1987009290915.04.1987         Original published format: JP 9290987
[1988/42]
Filing languageEN
Procedural languageEN
PublicationType: A2 Application without search report 
No.:EP0287120
Date:19.10.1988
Language:EN
[1988/42]
Type: A3 Search report 
No.:EP0287120
Date:07.11.1990
Language:EN
[1990/45]
Type: B1 Patent specification 
No.:EP0287120
Date:03.03.1993
Language:EN
[1993/09]
Search report(s)(Supplementary) European search report - dispatched on:EP20.09.1990
ClassificationIPC:G11C7/00, G11C7/06, G11C11/409
[1993/09]
CPC:
G11C7/065 (EP,US); G11C11/40 (KR); G11C11/4091 (EP,US);
G11C11/4097 (EP,US); G11C7/18 (EP,US)
Former IPC [1988/42]G11C7/00, G11C11/24, G11C7/06
Designated contracting statesDE,   FR,   GB [1988/42]
TitleGerman:Halbleiterspeichervorrichtung mit einer Abfühlverstärkeranordnung[1988/42]
English:Semiconductor memory device having improved sense amplifier arrangement[1988/42]
French:Dispositif de mémoire à semi-conducteurs avec un agencement d'amplificateurs de détection[1988/42]
Examination procedure15.04.1988Examination requested  [1988/42]
24.04.1992Despatch of communication of intention to grant (Approval: Yes)
01.09.1992Communication of intention to grant the patent
29.09.1992Fee for grant paid
29.09.1992Fee for publishing/printing paid
Opposition(s)04.12.1993No opposition filed within time limit [1994/08]
Fees paidRenewal fee
20.04.1990Renewal fee patent year 03
22.04.1991Renewal fee patent year 04
22.04.1992Renewal fee patent year 05
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Documents cited:Search[A]US4656613  (NORWOOD ROGER D [US], et al);
 [A]US4233675  (KARP JOEL A, et al)
The EPO accepts no responsibility for the accuracy of data originating from other authorities; in particular, it does not guarantee that it is complete, up to date or fit for specific purposes.