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Extract from the Register of European Patents

EP About this file: EP0304035

EP0304035 - Bi-mos circuit capable of high speed operation with low power consumption [Right-click to bookmark this link]
StatusNo opposition filed within time limit
Status updated on  11.12.1993
Database last updated on 24.04.2024
Most recent event   Tooltip11.12.1993No opposition filed within time limitpublished on 02.02.1994 [1994/05]
Applicant(s)For all designated states
NEC Corporation
7-1, Shiba 5-chome Minato-ku
Tokyo 108-8001 / JP
[N/P]
Former [1989/08]For all designated states
NEC CORPORATION
7-1, Shiba 5-chome Minato-ku
Tokyo / JP
Inventor(s)01 / Yamazaki, Toru
c/o NEC Corporation 33-1, Shiba 5-chome
Minato-ku Tokyo / JP
[1989/08]
Representative(s)Glawe, Delfs, Moll
Partnerschaft mbB von
Patent- und Rechtsanwälten
Postfach 26 01 62
80058 München / DE
[N/P]
Former [1989/08]Glawe, Delfs, Moll & Partner
Patentanwälte Postfach 26 01 62
D-80058 München / DE
Application number, filing date88113356.517.08.1988
[1989/08]
Priority number, dateJP1987020315617.08.1987         Original published format: JP 20315687
JP1988002027829.01.1988         Original published format: JP 2027888
[1989/08]
Filing languageEN
Procedural languageEN
PublicationType: A2 Application without search report 
No.:EP0304035
Date:22.02.1989
Language:EN
[1989/08]
Type: A3 Search report 
No.:EP0304035
Date:12.07.1989
Language:EN
[1989/28]
Type: B1 Patent specification 
No.:EP0304035
Date:10.02.1993
Language:EN
[1993/06]
Search report(s)(Supplementary) European search report - dispatched on:EP23.05.1989
ClassificationIPC:H03K19/094
[1989/08]
CPC:
H03K19/0013 (EP,US); H03K19/09448 (EP,US)
Designated contracting statesDE,   FR,   GB [1989/08]
TitleGerman:Bimosschaltung, fähig zum Betrieb bei hoher Geschwindigkeit mit niedrigem Verbrauch[1989/08]
English:Bi-mos circuit capable of high speed operation with low power consumption[1989/08]
French:Circuit Bimos capable d'une grande vitesse de fonctionnement avec une faible consommation[1989/08]
Examination procedure17.08.1988Examination requested  [1989/08]
06.12.1990Despatch of a communication from the examining division (Time limit: M06)
07.06.1991Reply to a communication from the examining division
27.03.1992Despatch of communication of intention to grant (Approval: Yes)
07.08.1992Communication of intention to grant the patent
22.09.1992Fee for grant paid
22.09.1992Fee for publishing/printing paid
Opposition(s)11.11.1993No opposition filed within time limit [1994/05]
Fees paidRenewal fee
21.08.1990Renewal fee patent year 03
16.08.1991Renewal fee patent year 04
20.08.1992Renewal fee patent year 05
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Documents cited:Search[X]EP0209805  (HITACHI LTD [JP]);
 [Y]EP0132822  (HITACHI LTD [JP]);
 [X]US4675557  (HUNTINGTON ROBERT C [US])
 [YD]  - NEC RESEARCH AND DEVELOPMENT, no. 84, January 1987, pages 125-130, Tokyo, JP; H. NAKASHIBA et al.: "Low power and high-speed BiCMOS gate arrays"
 [AD]  - VLSI DESIGN, August 1984, pages 98-100; S.-C. LEE et al.: "Bi-CMOS technology for high-performance VLSI circuits"
The EPO accepts no responsibility for the accuracy of data originating from other authorities; in particular, it does not guarantee that it is complete, up to date or fit for specific purposes.