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Extract from the Register of European Patents

EP About this file: EP0294868

EP0294868 - Semiconductor device of the SOI type and method of manufacturing same [Right-click to bookmark this link]
StatusThe application is deemed to be withdrawn
Status updated on  29.04.1993
Database last updated on 26.06.2024
Most recent event   Tooltip29.04.1993Application deemed to be withdrawnpublished on 16.06.1993 [1993/24]
Applicant(s)For all designated states
Koninklijke Philips Electronics N.V.
Groenewoudseweg 1
5621 BA Eindhoven / NL
[N/P]
Former [1988/50]For all designated states
Philips Electronics N.V.
Groenewoudseweg 1
NL-5621 BA Eindhoven / NL
Inventor(s)01 / Widdershoven, Franciscus Petrus
c/o INT. OCTROOIBUREAU B.V. Prof. Holstlaan 6
NL-5656 AA Eindhoven / NL
[1988/50]
Representative(s)Veerman, Jan Willem, et al
INTERNATIONAAL OCTROOIBUREAU B.V., Prof. Holstlaan 6
5656 AA Eindhoven / NL
[N/P]
Former [1993/17]Veerman, Jan Willem, et al
INTERNATIONAAL OCTROOIBUREAU B.V., Prof. Holstlaan 6
NL-5656 AA Eindhoven / NL
Former [1992/09]Jilderda, Anne Ayolt
Internationaal Octrooibureau B.V. Prof. Holstlaan 6 P.O. Box 220
NL-5600 AE Eindhoven / NL
Former [1988/50]Houbiers, Ernest Emile Marie Gerlach
INTERNATIONAAL OCTROOIBUREAU B.V., Prof. Holstlaan 6
NL-5656 AA Eindhoven / NL
Application number, filing date88201023.420.05.1988
[1988/50]
Priority number, dateNL1987000125126.05.1987         Original published format: NL 8701251
[1988/50]
Filing languageEN
Procedural languageEN
PublicationType: A1 Application with search report 
No.:EP0294868
Date:14.12.1988
Language:EN
[1988/50]
Search report(s)(Supplementary) European search report - dispatched on:EP25.10.1988
ClassificationIPC:H01L21/74, H01L29/78, H01L29/10
[1988/50]
CPC:
H01L21/266 (EP,US); H01L21/00 (KR); H01L21/743 (EP,US);
H01L29/0684 (EP,US); H01L29/10 (EP,US); H01L29/1087 (EP,US);
H01L29/78609 (EP,US); Y10S257/901 (EP,US) (-)
Designated contracting statesDE,   FR,   GB,   IT,   NL [1988/50]
TitleGerman:SOI-Halbleiteranordnung und Verfahren zu deren Herstellung[1988/50]
English:Semiconductor device of the SOI type and method of manufacturing same[1988/50]
French:Dispositif semi-conducteur du type SOI et procédé pour sa fabrication[1988/50]
File destroyed:12.06.1999
Examination procedure08.06.1989Examination requested  [1989/32]
02.12.1992Application deemed to be withdrawn, date of legal effect  [1993/24]
19.01.1993Despatch of communication that the application is deemed to be withdrawn, reason: renewal fee not paid in time  [1993/24]
15.02.1993Despatch of communication of intention to grant (Approval: )
Fees paidRenewal fee
25.05.1990Renewal fee patent year 03
28.05.1991Renewal fee patent year 04
Penalty fee
Additional fee for renewal fee
01.06.199205   M06   Not yet paid
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Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court.
Documents cited:Search[A]JP59207640  ;
 [A]JP5856352  ;
 [A]JP56137674  ;
 [A]JP5687340  ;
 [A]US3925120  (SAIDA HIROJI, et al);
 [A]US3879745  (THARMARATNAM POOTHATHAMBY);
 [A]DE2641302  (SIEMENS AG);
 [A]US4199773  (GOODMAN ALVIN M [US], et al);
 [A]US4202002  (LA MONEDA F H DE [US]);
 [A]EP0032022  (FUJITSU LTD [JP])
 [A]  - PATENT ABSTRACTS OF JAPAN, vol. 9, no. 69 (E-305), 29th March 1985, page 88 E 305; & JP-A-59 207 640 (HITACHI SEISAKUSHO K.K.) 24-11-1984, & JP59207640 A 00000000
 [A]  - IEEE TRANSACTIONS ON ELECTRON DEVICES, vol. ED-24, no. 6, June 1977, pages 730-738, New York, US; D.J. McGREIVY: "On the origin of leakage currents in silicon-on-sapphire MOS transistors"
 [A]  - PATENT ABSTRACTS OF JAPAN, vol. 7, no. 144 (E-183), 23rd June 1983, page 30 E 183; & JP-A-58 56 352 (HITACHI SEISAKUSHO K.K.) 04-04-1983, & JP5856352 A 00000000
 [A]  - PATENT ABSTRACTS OF JAPAN, vol. 6, no. 16 (E-92), 29th January 1982, page 72 E 92; & JP-A-56 137 674 (CHO LSI GIJUTSU KENKYU KUMIAI) 27-10-1981, & JP56137674 A 00000000
 [A]  - PATENT ABSTRACTS OF JAPAN, vol. 5, no. 159 (E-77), 14th October 1981, page 3 E 77; & JP-A-56 87 340 (FUJITSU K.K.) 15-07-1981, & JP5687340 A 00000000
The EPO accepts no responsibility for the accuracy of data originating from other authorities; in particular, it does not guarantee that it is complete, up to date or fit for specific purposes.