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Extract from the Register of European Patents

EP About this file: EP0285410

EP0285410 - Forming metal interconnects on uneven substrates [Right-click to bookmark this link]
StatusThe application is deemed to be withdrawn
Status updated on  09.01.1992
Database last updated on 30.10.2024
Most recent event   Tooltip09.01.1992Application deemed to be withdrawnpublished on 26.02.1992 [1992/09]
Applicant(s)For all designated states
FAIRCHILD SEMICONDUCTOR CORPORATION
10400 Ridgeview Court P.O. Box 1500
Cupertino, California 95014 / US
[N/P]
Former [1989/35]For all designated states
FAIRCHILD SEMICONDUCTOR CORPORATION
10400 Ridgeview Court P.O. Box 1500
Cupertino, California 95014 / US
Former [1988/40]For all designated states
FAIRCHILD SEMICONDUCTOR CORPORATION
10400 Ridgeview Court P.O. Box 1500
Cupertino California 95014 / US
Inventor(s)01 / Kulkarni, Vivek D.
474 Hawthrone Avenue
No.4 Sunnyvale, California 94086 / US
02 / Castel, Egil D.
10668C Maplewood
Cupertino, California 95014 / US
[1988/40]
Representative(s)Jones, Ian, et al
W.P. Thompson & Co. Celcon House 289-293 High Holborn
London WC1V 7HU / GB
[N/P]
Former [1988/40]Jones, Ian, et al
W.P. THOMPSON & CO. Celcon House 289-293 High Holborn
London WC1V 7HU / GB
Application number, filing date88302872.230.03.1988
[1988/40]
Priority number, dateUS1987003396101.04.1987         Original published format: US 33961
[1988/40]
Filing languageEN
Procedural languageEN
PublicationType: A1 Application with search report 
No.:EP0285410
Date:05.10.1988
Language:EN
[1988/40]
Search report(s)(Supplementary) European search report - dispatched on:EP06.07.1988
ClassificationIPC:H01L21/90
[1988/40]
CPC:
H01L21/7684 (EP,US); H01L21/302 (KR); H01L21/76819 (EP,US)
Designated contracting statesDE,   FR,   GB,   IT,   NL [1988/40]
TitleGerman:Ausbildung von metallischen Verbindungen auf unebenen Substraten[1988/40]
English:Forming metal interconnects on uneven substrates[1988/40]
French:Formation de connexions métalliques sur des substrats inégaux[1988/40]
File destroyed:12.06.1999
Examination procedure25.10.1988Examination requested  [1988/51]
04.04.1991Despatch of a communication from the examining division (Time limit: M04)
15.08.1991Application deemed to be withdrawn, date of legal effect  [1992/09]
12.09.1991Despatch of communication that the application is deemed to be withdrawn, reason: reply to the communication from the examining division not received in time  [1992/09]
Fees paidRenewal fee
04.01.1990Renewal fee patent year 03
20.12.1990Renewal fee patent year 04
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Documents cited:Search[A]EP0215542  (TOSHIBA KK [JP])
 [X]  - IBM TECHNICAL DISCLOSURE BULLETIN, vol. 28, no. 2, July 1985, pages 827-828, New York US; "Method of adjusting conductive stud surfaces to the same level"
 [A]  - IBM TECHNICAL DISCLOSURE BULLETIN, vol. 24, no 4, September 1981, pages 2189-2191, New York US; T.M.REITH et al.: "Hybrid contact metal planarization process"
The EPO accepts no responsibility for the accuracy of data originating from other authorities; in particular, it does not guarantee that it is complete, up to date or fit for specific purposes.