blank Quick help
blank Maintenance news

Scheduled maintenance

Regular maintenance outages:
between 05.00 and 05.15 hrs CET (Monday to Sunday).

Other outages
Availability

2022.02.11

More...
blank News flashes

News Flashes

New version of the European Patent Register – SPC proceedings information in the Unitary Patent Register.

2024-07-24

More...
blank Related links

Extract from the Register of European Patents

EP About this file: EP0286428

EP0286428 - Method of fabricating a junction field effect transistor [Right-click to bookmark this link]
StatusThe application is deemed to be withdrawn
Status updated on  02.08.1991
Database last updated on 03.10.2024
Most recent event   Tooltip02.08.1991Application deemed to be withdrawnpublished on 18.09.1991 [1991/38]
Applicant(s)For all designated states
GTE Laboratories Incorporated
1209 Orange Street Wilmington
Delaware 19801 / US
[N/P]
Former [1988/41]For all designated states
GTE LABORATORIES INCORPORATED
1209 Orange Street
Wilmington Delaware 19801 / US
Inventor(s)01 / Armiento, Craig A.
4 Badger Circle
Acton Massachusetts 01720 / US
[1988/41]
Representative(s)Bubb, Antony John Allen, et al
Wilson Gunn Chancery House, Chancery Lane
London WC2A 1QU / GB
[N/P]
Former [1988/41]Bubb, Antony John Allen, et al
GEE & CO. Chancery House Chancery Lane
London WC2A 1QU / GB
Application number, filing date88303166.808.04.1988
[1988/41]
Priority number, dateUS1987003641109.04.1987         Original published format: US 36411
[1988/41]
Filing languageEN
Procedural languageEN
PublicationType: A2 Application without search report 
No.:EP0286428
Date:12.10.1988
Language:EN
[1988/41]
Type: A3 Search report 
No.:EP0286428
Date:01.08.1990
Language:EN
[1990/31]
Search report(s)(Supplementary) European search report - dispatched on:EP12.06.1990
ClassificationIPC:H01L29/80, H01L21/28
[1990/25]
CPC:
H01L29/66924 (EP,US); H01L29/7722 (EP,US); H01L29/8083 (EP,US);
H01L29/20 (EP); Y10S148/088 (EP,US); Y10S438/944 (EP,US)
Former IPC [1988/41]H01L29/80
Designated contracting statesDE,   FR,   GB,   NL [1988/41]
TitleGerman:Verfahren zur Herstellung eines Jonction-Feldeffekt-Transistors[1988/41]
English:Method of fabricating a junction field effect transistor[1988/41]
French:Procédé pour la fabrication d'un transistor à effet de champ à jonction[1988/41]
File destroyed:08.03.1999
Examination procedure02.02.1991Application deemed to be withdrawn, date of legal effect  [1991/38]
25.04.1991Despatch of communication that the application is deemed to be withdrawn, reason: examination fee not paid in time  [1991/38]
Fees paidRenewal fee
21.03.1990Renewal fee patent year 03
Penalty fee
Penalty fee Rule 85b EPC 1973
28.02.1991M01   Not yet paid
Opt-out from the exclusive  Tooltip
competence of the Unified
Patent Court
See the Register of the Unified Patent Court for opt-out data
Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court.
Documents cited:Search[A]EP0197838  (THOMSON CSF [FR])
 [A]  - JOURNAL OF THE ELECTROCHEMICAL SOCIETY
 [A]  - JOURNAL OF THE ELECTROCHEMICAL SOCIETY: SOLID-STATE SCIENCE AND TECHNOLOGY
 [A]  - (J.R. SHEALY et al.)
The EPO accepts no responsibility for the accuracy of data originating from other authorities; in particular, it does not guarantee that it is complete, up to date or fit for specific purposes.