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Extract from the Register of European Patents

EP About this file: EP0298778

EP0298778 - Semiconductor laser devices and methods of making same [Right-click to bookmark this link]
StatusNo opposition filed within time limit
Status updated on  03.12.1994
Database last updated on 06.07.2024
Most recent event   Tooltip03.12.1994No opposition filed within time limitpublished on 25.01.1995 [1995/04]
Applicant(s)For all designated states
Sharp Kabushiki Kaisha
22-22 Nagaike-cho
Abeno-ku
Osaka-shi
Osaka-fu 545-0013 / JP
[N/P]
Former [1989/02]For all designated states
SHARP KABUSHIKI KAISHA
22-22 Nagaike-cho Abeno-ku
Osaka 545 / JP
Inventor(s)01 / Morimoto, Taiji
989-4, Hokkejishin-machi
Nara-shi Nara-ken / JP
02 / Yamaguchi, Masahiro
2-11, Kagiya-cho
Tokai-shi Aichi-ken / JP
03 / Kaneiwa, Shinji
2-301, Katsuragi-cho
Nara-shi Nara-ken / JP
04 / Hayashi, Hiroshi
11-5-8, nagamodai
Kamo-cho Soraku-gun / JP
05 / Kawanishi, Hidenori
46-2, Konoike
Higashiosaka-shi Osaka / JP
[1989/02]
Representative(s)White, Martin David, et al
MARKS & CLERK, 57-60 Lincoln's Inn Fields
London WC2A 3LS / GB
[N/P]
Former [1989/02]White, Martin David, et al
MARKS & CLERK, 57/60 Lincoln's Inn Fields
London WC2A 3LS / GB
Application number, filing date88306284.608.07.1988
[1989/02]
Priority number, dateJP1987017329410.07.1987         Original published format: JP 17329487
JP1988000874919.01.1988         Original published format: JP 874988
[1989/02]
Filing languageEN
Procedural languageEN
PublicationType: A2 Application without search report 
No.:EP0298778
Date:11.01.1989
Language:EN
[1989/02]
Type: A3 Search report 
No.:EP0298778
Date:30.05.1990
Language:EN
[1990/22]
Type: B1 Patent specification 
No.:EP0298778
Date:02.02.1994
Language:EN
[1994/05]
Search report(s)(Supplementary) European search report - dispatched on:EP12.04.1990
ClassificationIPC:H01S3/18
[1989/02]
CPC:
H01S5/24 (EP,US); H01S5/16 (EP,US); H01S5/168 (EP,US)
Designated contracting statesDE,   FR,   GB [1989/02]
TitleGerman:Halbleiterlaservorrichtungen und Verfahren zur Herstellung derselben[1989/02]
English:Semiconductor laser devices and methods of making same[1989/02]
French:Dispositifs de laser semi-conducteur et leur procédé de fabrication[1994/05]
Former [1989/02]Dispositifs de laser semi-conducteur et procédés pour faire celui-ci
Examination procedure18.07.1988Examination requested  [1989/02]
02.11.1992Despatch of a communication from the examining division (Time limit: M04)
01.03.1993Reply to a communication from the examining division
04.05.1993Despatch of communication of intention to grant (Approval: Yes)
12.07.1993Communication of intention to grant the patent
22.09.1993Fee for grant paid
22.09.1993Fee for publishing/printing paid
Opposition(s)03.11.1994No opposition filed within time limit [1995/04]
Fees paidRenewal fee
17.07.1990Renewal fee patent year 03
13.07.1991Renewal fee patent year 04
09.07.1992Renewal fee patent year 05
12.07.1993Renewal fee patent year 06
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Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court.
Documents cited:Search[A]US4371966  (SCIFRES DONALD R, et al);
 [A]US4349905  (ACKLEY DONALD E);
 [A]EP0073548  (PHILIPS NV [NL]);
 [A]EP0174635  (SIEMENS AG [DE]);
 [A]EP0115390  (XEROX CORP [US]);
 [A]US4282494  (YONEZU HIROO, et al)
 [A]  - PATENT ABSTRACTS OF JAPAN, unexamined applications, E section, vol. 6, no. 205, October 16, 1982 THE PATENT OFFICE JAPANESE GOVERNMENT page 67 E 136
 [A]  - PATENT ABSTRACTS OF JAPAN, unexamined applications, E section, vol. 5, no. 186, November 25, 1981 THE PATENT OFFICE JAPANESE GOVERNMENT page 139 E 84
The EPO accepts no responsibility for the accuracy of data originating from other authorities; in particular, it does not guarantee that it is complete, up to date or fit for specific purposes.