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EP0313452
European procedure
Extract from the Register of European Patents
EP About this file: EP0313452
| EP0313452 - Process of depositing a refractory metal-silicide for integrated circuits manufacturing [Right-click to bookmark this link] | Status | No opposition filed within time limit Status updated on 23.07.1992 Database last updated on 28.05.2024 | Most recent event Tooltip | 04.07.2008 | Change - representative | published on 06.08.2008 [2008/32] | Applicant(s) | For all designated states L'AIR LIQUIDE, SOCIETE ANONYME POUR L'ETUDE ET L'EXPLOITATION DES PROCEDES GEORGES CLAUDE 75, Quai d'Orsay 75321 Paris Cédex 07 / FR | [N/P] |
| Former [1989/17] | For all designated states L'AIR LIQUIDE, SOCIETE ANONYME POUR L'ETUDE ET L'EXPLOITATION DES PROCEDES GEORGES CLAUDE 75, Quai d'Orsay F-75321 Paris Cédex 07 / FR | Inventor(s) | 01 /
Hirase, Ikuo 75, quai d'Orsay F-75321 Paris cedex 07 / FR | 02 /
Rufin, Denis 75, quai d'Orsay F-75321 Paris cedex 07 / FR | 03 /
Sumiya, Tooru 2500 Hagisono Chigasaki 253 / JP | 04 /
Matsuura, Masamichi 2500 Hagisono Chigasaki 253 / JP | 05 /
Schack, Michael 75, quai d'Orsay F-75321 Paris cedex 07 / FR | 06 /
Ukishima, Sadayuki 2500 Hagisono Chigasaki 253 / JP | [1989/17] | Representative(s) | Vesin, Jacques, et al L'Air Liquide S.A. Service Propriété Industrielle, 75 Quai d'Orsay 75321 Paris Cedex 07 / FR | [2008/32] |
| Former [1989/17] | Vesin, Jacques, et al L'AIR LIQUIDE, SOCIETE ANONYME POUR L'ETUDE ET L'EXPLOITATION DES PROCEDES GEORGES CLAUDE 75, quai d'Orsay F-75321 Paris Cédex 07 / FR | Application number, filing date | 88402620.4 | 18.10.1988 | [1989/17] | Priority number, date | FR19870014383 | 19.10.1987 Original published format: FR 8714383 | [1989/17] | Filing language | FR | Procedural language | FR | Publication | Type: | A1 Application with search report | No.: | EP0313452 | Date: | 26.04.1989 | Language: | FR | [1989/17] | Type: | B1 Patent specification | No.: | EP0313452 | Date: | 18.09.1991 | Language: | FR | [1991/38] | Search report(s) | (Supplementary) European search report - dispatched on: | EP | 31.01.1989 | Classification | IPC: | H01L21/285, C23C16/42 | [1989/17] | CPC: |
C23C16/42 (EP,US);
H01L21/28 (KR);
H01L21/28518 (EP,US);
H01L21/32053 (EP,US)
| Designated contracting states | AT, BE, CH, DE, ES, FR, GB, IT, LI, NL, SE [1989/17] | Title | German: | Verfahren um hochschmelzendes Metallsilizid niederzuschlagen zur Herstellung von integrierten Schaltungen | [1991/38] | English: | Process of depositing a refractory metal-silicide for integrated circuits manufacturing | [1989/17] | French: | Procédé de dépot de siliciure de métal réfractaire pour la fabrication de circuits intégrés | [1989/17] |
| Former [1989/17] | Verfahren um feuerfestes Metallsilizid niederzuschlagen zur Herstellung von integrierten Schaltungen | Examination procedure | 26.10.1988 | Examination requested [1989/17] | 05.03.1991 | Despatch of communication of intention to grant (Approval: Yes) | 25.03.1991 | Communication of intention to grant the patent | 14.06.1991 | Fee for grant paid | 14.06.1991 | Fee for publishing/printing paid | Opposition(s) | 20.06.1992 | No opposition filed within time limit [1992/37] | Fees paid | Renewal fee | 11.09.1990 | Renewal fee patent year 03 |
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| Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Lapses during opposition Tooltip | AT | 18.09.1991 | [1992/29] | Documents cited: | Search | [A]EP0077535 (SIEMENS AG [DE]); | [A]GB2148946 (ADVANCED SEMICONDUCTOR MAT); | [A]EP0157052 (GENUS INC [US]) | [A] - JOURNAL OF MATERIALS SCIENCE | Examination | - JOURNAL OF MATERIALS SCIENCE, vol. 22, no. 2, février 1987, pages 547-553, Londres, GB; S.MOTOJIMA et al.: "PREPARATION AND PROPERTIES OF NICKEL SILICIDE LAYERS BY THE DIFFUSION AND CVD processes using Si2C16 as a source of silicon". |