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EP0383958
European procedure
Extract from the Register of European Patents
EP About this file: EP0383958
| EP0383958 - Tunable semiconductor laser [Right-click to bookmark this link] | Status | No opposition filed within time limit Status updated on 01.04.1994 Database last updated on 14.06.2024 | Most recent event Tooltip | 01.04.1994 | No opposition filed within time limit | published on 25.05.1994 [1994/21] | Applicant(s) | For all designated states SIEMENS AKTIENGESELLSCHAFT Werner-von-Siemens-Str. 1 DE-80333 München / DE | [N/P] |
| Former [1990/35] | For all designated states SIEMENS AKTIENGESELLSCHAFT Wittelsbacherplatz 2 D-80333 München / DE | Inventor(s) | 01 /
Amann, Markus-Christian, Dr.-Ing. Unterhachinger Strasse 89 D-8000 München 83 / DE | 02 /
Baumann, Gerhard G., Dr.rer.nat. Friedenstrasse 6 D-8012 Ottobrunn / DE | 03 /
Heinen, Jochen, Dr.-Ing. Dianastrasse 38 D-8013 Haar / DE | 04 /
Thulke, Wolfgang, Dr. rer. nat. Neubiberger Strasse 38 D-8000 München 83 / DE | [1990/35] | Application number, filing date | 89102596.7 | 15.02.1989 | [1990/35] | Filing language | DE | Procedural language | DE | Publication | Type: | A1 Application with search report | No.: | EP0383958 | Date: | 29.08.1990 | Language: | DE | [1990/35] | Type: | B1 Patent specification | No.: | EP0383958 | Date: | 02.06.1993 | Language: | DE | [1993/22] | Search report(s) | (Supplementary) European search report - dispatched on: | EP | 16.10.1989 | Classification | IPC: | H01S3/103, H01S3/08, H01S3/06 | [1993/22] | CPC: |
H01S5/06206 (EP,US);
H01S5/12 (EP,US)
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| Former IPC [1990/35] | H01S3/103, H01S3/08 | Designated contracting states | DE, ES, FR, GB, IT [1990/41] |
| Former [1990/35] | AT, BE, CH, DE, ES, FR, GB, GR, IT, LI, LU, SE | Title | German: | Abstimmbarer Halbleiterlaser | [1990/35] | English: | Tunable semiconductor laser | [1990/35] | French: | Laser à semi-conducteur accordable | [1990/35] | Examination procedure | 16.02.1990 | Loss of particular rights, legal effect: designated state(s) | 16.05.1990 | Despatch of communication of loss of particular rights: designated state(s) AT, BE, CH, GR, LU, NL, SE | 19.09.1990 | Examination requested [1990/46] | 04.11.1992 | Despatch of communication of intention to grant (Approval: Yes) | 24.11.1992 | Communication of intention to grant the patent | 18.02.1993 | Fee for grant paid | 18.02.1993 | Fee for publishing/printing paid | Opposition(s) | 03.03.1994 | No opposition filed within time limit [1994/21] | Fees paid | Renewal fee | 20.12.1990 | Renewal fee patent year 03 | 25.02.1992 | Renewal fee patent year 04 | 18.02.1993 | Renewal fee patent year 05 | Penalty fee | Penalty fee Rule 85a EPC 1973 | 13.03.1990 | AT M01 Not yet paid | 13.03.1990 | BE M01 Not yet paid | 13.03.1990 | CH M01 Not yet paid | 13.03.1990 | GR M01 Not yet paid | 13.03.1990 | LI M01 Not yet paid | 13.03.1990 | LU M01 Not yet paid | 13.03.1990 | NL M01 Not yet paid | 13.03.1990 | SE M01 Not yet paid |
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| Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Documents cited: | Search | [A]EP0173269 (NEC CORP [JP]); | [A]US4607370 (MUKAI SEIJI [US], et al); | [A]JPS63272088 (FUJITSU LTD); | [A]EP0296066 (FUJITSU LTD [JP]); | [A]EP0300790 (KOKUSAI DENSHIN DENWA CO LTD [JP]) | [A] - JOURNAL OF OPTICAL COMMUNICATIONS, Band 6, Nr. 2, Juni 1985, Seiten 42-43, Fachverlag Schiele & Schon, Berlin, DE; G. MÜLLER et al.: "Fabrication and characteristics of MCRW GaAs/GaAlAs lasers on semiinsulating substrate" |