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EP0343563
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EP About this file: EP0343563
| EP0343563 - Bipolar transistor with a reduced base resistance, and method for the production of a base connection region for a bipolar transistor structure [Right-click to bookmark this link] | Status | The application is deemed to be withdrawn Status updated on 28.04.1993 Database last updated on 09.09.2024 | Most recent event Tooltip | 28.04.1993 | Application deemed to be withdrawn | published on 16.06.1993 [1993/24] | Applicant(s) | For all designated states SIEMENS AKTIENGESELLSCHAFT Werner-von-Siemens-Str. 1 DE-80333 München / DE | [N/P] |
| Former [1989/48] | For all designated states SIEMENS AKTIENGESELLSCHAFT Wittelsbacherplatz 2 D-80333 München / DE | Inventor(s) | 01 /
Kabza, Herbert, Dr. Eschenrieder Strasse 13/B D-8000 München 60 / DE | 02 /
Probst, Volker Ehrengutstrasse 15 D-8000 München 5 / DE | 03 /
Schaber, Hans-Christian, Dr. Kreuzlinger Strasse 72 D-8034 Unterpfaffenhofen / DE | [1989/48] | Application number, filing date | 89109171.2 | 22.05.1989 | [1989/48] | Priority number, date | DE19883817881 | 26.05.1988 Original published format: DE 3817881 | [1989/48] | Filing language | DE | Procedural language | DE | Publication | Type: | A2 Application without search report | No.: | EP0343563 | Date: | 29.11.1989 | Language: | DE | [1989/48] | Type: | A3 Search report | No.: | EP0343563 | Date: | 09.05.1990 | Language: | DE | [1990/19] | Search report(s) | (Supplementary) European search report - dispatched on: | EP | 19.03.1990 | Classification | IPC: | H01L29/60, H01L29/58, H01L29/73 | [1990/18] | CPC: |
H01L29/66272 (EP);
H01L23/53271 (EP);
H01L29/42304 (EP);
H01L2924/0002 (EP)
| C-Set: |
H01L2924/0002, H01L2924/00 (EP)
|
| Former IPC [1989/48] | H01L29/58, H01L29/72 | Designated contracting states | DE, FR, GB, IT [1989/48] | Title | German: | Bipolartransistorstruktur mit reduziertem Basiswiderstand und Verfahren zur Herstellung eines Basisanschlussbereiches für eine Bipolartransistorstruktur | [1989/48] | English: | Bipolar transistor with a reduced base resistance, and method for the production of a base connection region for a bipolar transistor structure | [1989/48] | French: | Transistor bipolaire à résistance de base réduite et procédé de fabrication de la région de connexion de base d'une structure d'un transistor bipolaire | [1989/48] | File destroyed: | 20.04.2002 | Examination procedure | 09.10.1990 | Examination requested [1990/49] | 02.12.1992 | Application deemed to be withdrawn, date of legal effect [1993/24] | 19.01.1993 | Despatch of communication that the application is deemed to be withdrawn, reason: renewal fee not paid in time [1993/24] | Fees paid | Renewal fee | 20.12.1990 | Renewal fee patent year 03 | Penalty fee | Additional fee for renewal fee | 01.06.1992 | 04 M06 Not yet paid |
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| Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Documents cited: | Search | [A]JP62111466 ; | [AD]EP0226890 | [A] - PATENT ABSTRACTS OF JAPAN, Band 11, Nr. 320 (E-550)[2767], 17. Oktober 1987; & JP-A-62 111 466 (TOSHIBA), & JP62111466 A 00000000 | [A] - JOURNAL OF VACUUM SCIENCE & TECHNOLOGY - PART B, Band 5, Nr. 2, März/April 1987, Seiten 508-514; GIERISCH et al.: "Dopant diffusion from ion-implanted TaSi2 into Si" |