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Extract from the Register of European Patents

EP About this file: EP0356218

EP0356218 - Semiconductor memories and methods of manufacturing such memories [Right-click to bookmark this link]
StatusNo opposition filed within time limit
Status updated on  23.02.1996
Database last updated on 20.07.2024
Most recent event   Tooltip23.02.1996No opposition filed within time limitpublished on 10.04.1996 [1996/15]
Applicant(s)For all designated states
Sony Corporation
7-35 Kitashinagawa 6-chome
Shinagawa-ku
Tokyo 141 / JP
[N/P]
Former [1990/09]For all designated states
SONY CORPORATION
7-35 Kitashinagawa 6-chome Shinagawa-ku
Tokyo 141 / JP
Inventor(s)01 / Matsushita, Takeshi
Pat. Div. Sony Corporation 6-7-35 Kitashinagawa
Shinagawa-ku Tokyo 141 / JP
02 / Shimanoe, Muneharu
Pat. Div. Sony Corporation 6-7-35 Kitashinagawa
Shinagawa-ku Tokyo 141 / JP
03 / Sato, Hiroshi
Pat. Div. Sony Corporation 6-7-35 Kitashinagawa
Shinagawa-ku Tokyo 141 / JP
04 / Nieda, Akira
Pat. Div. Sony Corporation 6-7-35 Kitashinagawa
Shinagawa-ku Tokyo 141 / JP
[1990/09]
Representative(s)Cotter, Ivan John, et al
D Young & Co LLP 120 Holborn
London EC1N 2DY / GB
[N/P]
Former [1996/12]Cotter, Ivan John, et al
D. YOUNG & CO. 21 New Fetter Lane
London EC4A 1DA / GB
Former [1990/09]Thomas, Christopher Hugo, et al
D. Young & Co, 21 New Fetter Lane
London EC4A 1DA / GB
Application number, filing date89308540.723.08.1989
[1990/09]
Priority number, dateJP1988021215925.08.1988         Original published format: JP 21215988
[1990/09]
Filing languageEN
Procedural languageEN
PublicationType: A2 Application without search report 
No.:EP0356218
Date:28.02.1990
Language:EN
[1990/09]
Type: A3 Search report 
No.:EP0356218
Date:30.01.1991
Language:EN
[1991/05]
Type: B1 Patent specification 
No.:EP0356218
Date:19.04.1995
Language:EN
[1995/16]
Search report(s)(Supplementary) European search report - dispatched on:EP11.12.1990
ClassificationIPC:H01L21/82, H01L27/108, H01L27/10
[1990/52]
CPC:
H10B12/33 (EP,US); H01L21/70 (KR); H10B12/038 (EP,US);
H10B12/373 (EP,US)
Former IPC [1990/09]H01L27/10, H01L21/82
Designated contracting statesDE,   FR,   GB [1990/09]
TitleGerman:Halbleiterspeicher und Verfahren zu deren Herstellung[1990/09]
English:Semiconductor memories and methods of manufacturing such memories[1990/09]
French:Mémoires à semiconducteur et procédé pour leur fabrication[1990/09]
Examination procedure05.06.1991Examination requested  [1991/31]
11.10.1993Despatch of a communication from the examining division (Time limit: M06)
21.04.1994Reply to a communication from the examining division
01.07.1994Despatch of communication of intention to grant (Approval: Yes)
18.10.1994Communication of intention to grant the patent
30.11.1994Fee for grant paid
30.11.1994Fee for publishing/printing paid
Opposition(s)20.01.1996No opposition filed within time limit [1996/15]
Fees paidRenewal fee
21.12.1990Renewal fee patent year 03
07.08.1992Renewal fee patent year 04
12.08.1993Renewal fee patent year 05
09.08.1994Renewal fee patent year 06
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Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court.
Documents cited:Search[AD]JP62259769  ;
 [A]US4193836  (ALLISON DAVID F [US], et al);
 [A]EP0220410  (IBM [US])
 [AD]  - PATENT ABSTRACTS OF JAPAN vol. 12, no. 137 (M-690)(2984), 26 April 1988; & JP-A-62259769 (NEC) 12.11.1987, & JP62259769 A 19880426
The EPO accepts no responsibility for the accuracy of data originating from other authorities; in particular, it does not guarantee that it is complete, up to date or fit for specific purposes.