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EP0366423
European procedure
Extract from the Register of European Patents
EP About this file: EP0366423
| EP0366423 - Manufacturing method of semiconductor non-volatile memory device [Right-click to bookmark this link] | Status | No opposition filed within time limit Status updated on 30.03.1995 Database last updated on 26.07.2024 | Most recent event Tooltip | 30.03.1995 | No opposition filed within time limit | published on 17.05.1995 [1995/20] | Applicant(s) | For all designated states Matsushita Electronics Corporation 1006, Oaza-Kadoma Kadoma-shi Osaka 571-8501 / JP | [N/P] |
| Former [1990/18] | For all designated states Matsushita Electronics Corporation 1006, Oaza-Kadoma Kadoma-shi, Osaka 571 / JP | Inventor(s) | 01 /
Sugaya, Tadashi 1-1-57-104, Sujyaku, 5-chome Nara-shi Nara / JP | [1990/18] | Representative(s) | Crawford, Andrew Birkby, et al A.A. Thornton & Co. 235 High Holborn London WC1V 7LE / GB | [N/P] |
| Former [1990/18] | Crawford, Andrew Birkby, et al A.A. THORNTON & CO. Northumberland House 303-306 High Holborn London WC1V 7LE / GB | Application number, filing date | 89310967.8 | 24.10.1989 | [1990/18] | Priority number, date | JP19880267041 | 25.10.1988 Original published format: JP 26704188 | [1990/18] | Filing language | EN | Procedural language | EN | Publication | Type: | A2 Application without search report | No.: | EP0366423 | Date: | 02.05.1990 | Language: | EN | [1990/18] | Type: | A3 Search report | No.: | EP0366423 | Date: | 11.09.1991 | Language: | EN | [1991/37] | Type: | B1 Patent specification | No.: | EP0366423 | Date: | 25.05.1994 | Language: | EN | [1994/21] | Search report(s) | (Supplementary) European search report - dispatched on: | EP | 19.07.1991 | Classification | IPC: | H01L21/28, H01L21/316 | [1991/43] | CPC: |
H01L21/28202 (EP,US);
H01L21/02238 (EP,US);
H01L21/02255 (EP,US);
H01L21/02299 (EP,US);
H01L21/28211 (EP,US);
H01L21/31662 (US);
H01L29/512 (EP,US);
H01L29/518 (EP,US);
H10B69/00 (EP,US);
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| Former IPC [1990/18] | H01L21/82 | Designated contracting states | DE, FR, GB, NL [1990/18] | Title | German: | Verfahren zur Herstellung einer nicht-flüchtigen Speicheranordnung | [1990/18] | English: | Manufacturing method of semiconductor non-volatile memory device | [1990/18] | French: | Méthode de fabrication d'un dispositif de mémoire non volatile en semi-conducteur | [1990/18] | Examination procedure | 14.10.1991 | Examination requested [1991/52] | 18.08.1993 | Despatch of communication of intention to grant (Approval: Yes) | 19.11.1993 | Communication of intention to grant the patent | 09.02.1994 | Fee for grant paid | 09.02.1994 | Fee for publishing/printing paid | Opposition(s) | 28.02.1995 | No opposition filed within time limit [1995/20] | Fees paid | Renewal fee | 10.10.1991 | Renewal fee patent year 03 | 09.10.1992 | Renewal fee patent year 04 | 11.10.1993 | Renewal fee patent year 05 |
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| Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Documents cited: | Search | [A]US4302766 (GUTERMAN DANIEL C, et al); | [A]EP0051534 (FAIRCHILD CAMERA INSTR CO [US]); | [A]EP0197284 (FUJITSU LTD [JP]); | [A]US4635344 (HAVEMANN ROBERT H [US]) |