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EP0366472
European procedure
Extract from the Register of European Patents
EP About this file: EP0366472
| EP0366472 - Semiconductor laser apparatus [Right-click to bookmark this link] | Status | No opposition filed within time limit Status updated on 19.11.1994 Database last updated on 15.06.2024 | Most recent event Tooltip | 19.11.1994 | No opposition filed within time limit | published on 11.01.1995 [1995/02] | Applicant(s) | For all designated states MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. 1006, Oaza Kadoma Kadoma-shi Osaka 571-8501 / JP | [N/P] |
| Former [1990/18] | For all designated states MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. 1006, Ohaza Kadoma Kadoma-shi, Osaka-fu, 571 / JP | Inventor(s) | 01 /
Wada, Masaru 3-6-25 Sanyou-danchi Sanyou-cho Akaiwa-gun Okayama / JP | 02 /
Itoh, Kunio 78-1 Kohata-minamiyama Uji-shi Kyoto / JP | [1990/18] | Representative(s) | Crawford, Andrew Birkby, et al A.A. Thornton & Co. 235 High Holborn London WC1V 7LE / GB | [N/P] |
| Former [1990/18] | Crawford, Andrew Birkby, et al A.A. THORNTON & CO. Northumberland House 303-306 High Holborn London WC1V 7LE / GB | Application number, filing date | 89311073.4 | 26.10.1989 | [1990/18] | Priority number, date | JP19880274148 | 28.10.1988 Original published format: JP 27414888 | JP19880274149 | 28.10.1988 Original published format: JP 27414988 | [1990/18] | Filing language | EN | Procedural language | EN | Publication | Type: | A2 Application without search report | No.: | EP0366472 | Date: | 02.05.1990 | Language: | EN | [1990/18] | Type: | A3 Search report | No.: | EP0366472 | Date: | 05.12.1990 | Language: | EN | [1990/49] | Type: | B1 Patent specification | No.: | EP0366472 | Date: | 19.01.1994 | Language: | EN | [1994/03] | Search report(s) | (Supplementary) European search report - dispatched on: | EP | 16.10.1990 | Classification | IPC: | H01S3/025 | [1990/18] | CPC: |
H01S5/028 (EP,US);
H01L24/97 (EP,US);
H01S5/0232 (EP,US);
H01L2224/48091 (EP,US);
H01L2224/48247 (EP,US);
H01L2924/12042 (EP,US);
H01L2924/12043 (EP,US);
H01S5/02212 (EP,US);
H01S5/02234 (EP,US);
| C-Set: |
H01L2224/48091, H01L2924/00014 (EP,US);
H01L2924/12042, H01L2924/00 (US,EP);
H01L2924/12043, H01L2924/00 (US,EP)
| Designated contracting states | DE, FR, GB, NL [1990/18] | Title | German: | Halbleiterlaser-Vorrichtung | [1990/18] | English: | Semiconductor laser apparatus | [1990/18] | French: | Dispositif laser à semi-conducteur | [1990/18] | Examination procedure | 04.12.1990 | Examination requested [1991/05] | 31.07.1992 | Despatch of a communication from the examining division (Time limit: M06) | 02.02.1993 | Reply to a communication from the examining division | 10.03.1993 | Despatch of communication of intention to grant (Approval: Yes) | 16.07.1993 | Communication of intention to grant the patent | 06.10.1993 | Fee for grant paid | 06.10.1993 | Fee for publishing/printing paid | Opposition(s) | 20.10.1994 | No opposition filed within time limit [1995/02] | Fees paid | Renewal fee | 10.10.1991 | Renewal fee patent year 03 | 09.10.1992 | Renewal fee patent year 04 | 11.10.1993 | Renewal fee patent year 05 |
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| Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Documents cited: | Search | [A]JP60063977 ; | [A]JP62036614 ; | [A]JP59193080 ; | [Y]US4510607 (GARCIA GRAHAM A [US], et al); | [Y]DE3810899 (MITSUBISHI ELECTRIC CORP [JP]) | [A] - PATENT ABSTRACTS OF JAPAN, vol. 9, no. 197 (E-335)[1920], 14th August 1985; & JP-A-60 063 977 (MITSUBISHI DENKI K.K.), & JP60063977 A 00000000 | [A] - PATENT ABSTRACTS OF JAPAN, vol. 11, no. 219 (P-596)[2666], 16th July 1987; & JP-A-62 036 614 (MATSUSHITA ELECTRIC IND. CO., LTD), & JP62036614 A 00000000 | [A] - PATENT ABSTRACTS OF JAPAN, vol. 9, no. 53, (E-301), 7th march 1985; & JP-A-59 193 080 (HITACHI SEISAKUSHO K.K.), & JP59193080 A 00000000 | [A] - JOURNAL OF LIGHTWAVE TECHNOLOGY, vol. LT-5, no. 9, September 1987, pages 1263-1268, New York, US; Y. NAKAJIMA et al.: "High-power high-reliability operation of 1.3-mum p-substrate buried crescent laser diodes" |