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Extract from the Register of European Patents

EP About this file: EP0410116

EP0410116 - Method of manufacturing a wire-bonded semiconductor device [Right-click to bookmark this link]
Former [1991/05]Semiconductor device including lead frames
[1995/36]
StatusNo opposition filed within time limit
Status updated on  12.07.1996
Database last updated on 07.10.2024
Most recent event   Tooltip12.07.1996No opposition filed within time limitpublished on 28.08.1996 [1996/35]
Applicant(s)For all designated states
Kabushiki Kaisha Toshiba
72, Horikawa-cho, Saiwai-ku Kawasaki-shi
Kanagawa-ken 210-8572 / JP
[N/P]
Former [1995/01]For all designated states
KABUSHIKI KAISHA TOSHIBA
72, Horikawa-cho, Saiwai-ku
Kawasaki-shi, Kanagawa-ken 210, Tokyo / JP
Former [1991/05]For all designated states
Kabushiki Kaisha Toshiba
72, Horikawa-cho Saiwai-ku
Kawasaki-shi / JP
Inventor(s)01 / Ikenoue, Kazuhisa, C/o Intellectual Property Div.
K.K. Toshiba, 1-1 Shibaura 1-chome
Minato-ku, Tokyo 105 / JP
[1991/05]
Representative(s)Lehn, Werner, et al
Hoffmann Eitle, Patent- und Rechtsanwälte, Postfach 81 04 20
81904 München / DE
[N/P]
Former [1991/05]Lehn, Werner, Dipl.-Ing., et al
Hoffmann, Eitle & Partner, Patentanwälte, Postfach 81 04 20
D-81904 München / DE
Application number, filing date90110621.105.06.1990
[1991/05]
Priority number, dateJP1989016368628.06.1989         Original published format: JP 16368689
[1991/05]
Filing languageEN
Procedural languageEN
PublicationType: A2 Application without search report 
No.:EP0410116
Date:30.01.1991
Language:EN
[1991/05]
Type: A3 Search report 
No.:EP0410116
Date:06.05.1992
Language:EN
[1992/19]
Type: B1 Patent specification 
No.:EP0410116
Date:06.09.1995
Language:EN
[1995/36]
Search report(s)(Supplementary) European search report - dispatched on:EP16.03.1992
ClassificationIPC:H01L21/60, H01L23/495
[1995/36]
CPC:
H01L21/60 (KR); H01L23/4951 (EP); H01L23/49537 (EP);
H01L23/49586 (EP); H01L23/52 (KR); H01L2224/48091 (EP);
H01L2224/48247 (EP); H01L24/48 (EP); H01L2924/00014 (EP);
H01L2924/181 (EP) (-)
C-Set:
H01L2224/48091, H01L2924/00014 (EP);
H01L2924/00014, H01L2224/05599 (EP);
H01L2924/00014, H01L2224/45099 (EP);
H01L2924/181, H01L2924/00 (EP)
Former IPC [1991/05]H01L23/495
Designated contracting statesDE,   FR,   GB [1991/05]
TitleGerman:Verfahren zur Herstellung einer Halbleiteranordnung durch "Wire-bonding"[1995/36]
English:Method of manufacturing a wire-bonded semiconductor device[1995/36]
French:Procédé de fabrication d'un dispositif semiconducteur à connexion par fil[1995/36]
Former [1991/05]Halbleiteranordnung mit Leiterrahmen
Former [1991/05]Semiconductor device including lead frames
Former [1991/05]Dispositif semi-conducteur comprenant des cadres conducteurs
Examination procedure05.06.1990Examination requested  [1991/05]
19.07.1994Despatch of a communication from the examining division (Time limit: M04)
09.09.1994Reply to a communication from the examining division
11.11.1994Despatch of communication of intention to grant (Approval: Yes)
09.03.1995Communication of intention to grant the patent
31.05.1995Fee for grant paid
31.05.1995Fee for publishing/printing paid
Opposition(s)08.06.1996No opposition filed within time limit [1996/35]
Fees paidRenewal fee
09.06.1992Renewal fee patent year 03
14.06.1993Renewal fee patent year 04
11.06.1994Renewal fee patent year 05
01.05.1995Renewal fee patent year 06
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Documents cited:Search[XP]EP0354696  (TOSHIBA KK [JP], et al);
 [X]EP0108502  (FUJITSU LTD [JP])
The EPO accepts no responsibility for the accuracy of data originating from other authorities; in particular, it does not guarantee that it is complete, up to date or fit for specific purposes.