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EP0427910
European procedure
Extract from the Register of European Patents
EP About this file: EP0427910
| EP0427910 - A boron source for silicon molecular beam epitaxy [Right-click to bookmark this link] | Status | No opposition filed within time limit Status updated on 24.12.1994 Database last updated on 19.10.2024 | Most recent event Tooltip | 26.07.1995 | Lapse of the patent in a contracting state | published on 13.09.1995 [1995/37] | Applicant(s) | For all designated states International Business Machines Corporation New Orchard Road Armonk, NY 10504 / US | [N/P] |
| Former [1991/21] | For all designated states International Business Machines Corporation Old Orchard Road Armonk, N.Y. 10504 / US | Inventor(s) | 01 /
Delage, Sylvain Laurent 49 rue de Dantzig F-75015 Paris / FR | 02 /
Ek, Bruce Allen 15 Shore Road Pelham Manor, New York 10803 / US | 03 /
Iyer, Subramanian Sirkanteswara 3172 Cedar Road Yorktown Heights, New York 10598 / US | [1991/21] | Representative(s) | Schäfer, Wolfgang IBM Deutschland Informationssysteme GmbH Patentwesen und Urheberrecht 70548 Stuttgart / DE | [N/P] |
| Former [1994/38] | Schäfer, Wolfgang, Dipl.-Ing. IBM Deutschland Informationssysteme GmbH Patentwesen und Urheberrecht D-70548 Stuttgart / DE | ||
| Former [1994/08] | Mönig, Anton, Dipl.-Ing. IBM Deutschland Informationssysteme GmbH, Patentwesen und Urheberrecht D-70548 Stuttgart / DE | ||
| Former [1991/21] | Klocke, Peter, Dipl.-Ing. IBM Deutschland Informationssysteme GmbH Patentwesen und Urheberrecht Pascalstrasse 100 D-70569 Stuttgart / DE | Application number, filing date | 90111167.4 | 13.06.1990 | [1991/21] | Priority number, date | US19890419188 | 10.10.1989 Original published format: US 419188 | [1991/21] | Filing language | EN | Procedural language | EN | Publication | Type: | A1 Application with search report | No.: | EP0427910 | Date: | 22.05.1991 | Language: | EN | [1991/21] | Type: | B1 Patent specification | No.: | EP0427910 | Date: | 23.02.1994 | Language: | EN | [1994/08] | Search report(s) | (Supplementary) European search report - dispatched on: | EP | 22.03.1991 | Classification | IPC: | C30B23/02, C30B29/06, C22C1/02 | [1991/21] | CPC: |
C30B29/06 (EP,US);
C30B23/002 (EP,US)
| Designated contracting states | DE, FR, GB [1991/21] | Title | German: | Borquelle für Molekularstrahlepitaxie | [1991/21] | English: | A boron source for silicon molecular beam epitaxy | [1991/21] | French: | Source de bore pour l'épitaxie par jets moléculaires | [1991/21] | File destroyed: | 03.03.2001 | Examination procedure | 13.12.1990 | Examination requested [1991/21] | 26.04.1993 | Despatch of communication of intention to grant (Approval: Yes) | 03.08.1993 | Communication of intention to grant the patent | 23.10.1993 | Fee for grant paid | 23.10.1993 | Fee for publishing/printing paid | Opposition(s) | 24.11.1994 | No opposition filed within time limit [1995/07] | Fees paid | Renewal fee | 19.06.1992 | Renewal fee patent year 03 | 24.06.1993 | Renewal fee patent year 04 |
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| Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Lapses during opposition Tooltip | GB | 13.06.1994 | [1995/37] | Documents cited: | Search | [AD]US3949119 (SHEWCHUN JOHN, et al) | [A] - APPLIED PHYSICS LETTERS, vol. 48, no. 3, January 1986, pages 221-223, New York, NY, US; R. OSTROM et al.: "Boron doping in Si-molecular beam epitaxy by co-evaporation of B2O3 or doped silicon" | [AD] - J. ELECTROCHEM. SOC., vol. 124, no. 11, November 1977, pages 1795-1802, Manchester, MH, US; Y. OTA: "Si molecular beam epitaxy (n in n+) with wide range doping control" |