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EP0396239
European procedure
Extract from the Register of European Patents
EP About this file: EP0396239
| EP0396239 - Apparatus for producing semiconductors by vapour phase deposition [Right-click to bookmark this link] | Status | No opposition filed within time limit Status updated on 15.07.1995 Database last updated on 03.09.2024 | Most recent event Tooltip | 15.07.1995 | No opposition filed within time limit | published on 06.09.1995 [1995/36] | Applicant(s) | For all designated states DAIDOUSANSO CO., LTD. 20-16, Higashishinsaibashi 1-chome, Chuo-ku Osaka-shi Osaka 542 / JP | [N/P] |
| Former [1990/45] | For all designated states DAIDOUSANSO CO., LTD. 20-16, Higashishinsaibashi 1-chome, Chuo-ku Osaka-shi, Osaka 542 / JP | Inventor(s) | 01 /
Yoshino, Akira 30-13, Nishiyamadai 2-chome Osakasayama-shi, Osaka 589 / JP | 02 /
Ohmori, Yoshinori Shomonoike Jutaku 13-109 545 Nagasonecho Saika-shi, Osaka 591 / JP | 03 /
Okumura, Kenji 2-134-2 Aho Matsubara-shi, Osaka 580 / JP | 04 /
Ohnishi, Toshiharu 3-20-504, Takabedai 3-chome Tondabayashi-shi, Osaka 584 / JP | [1990/45] | Representative(s) | Marlow, Nicholas Simon, et al Reddie & Grose LLP The White Chapel Building 10 Whitechapel High Street London E1 8QS / GB | [N/P] |
| Former [1990/45] | Marlow, Nicholas Simon, et al Reddie & Grose 16, Theobalds Road London WC1X 8PL / GB | Application number, filing date | 90302831.4 | 16.03.1990 | [1990/45] | Priority number, date | JP19890091651 | 10.04.1989 Original published format: JP 9165189 | JP19890039862U | 03.04.1989 Original published format: JP 3986289 U | [1990/45] | Filing language | EN | Procedural language | EN | Publication | Type: | A2 Application without search report | No.: | EP0396239 | Date: | 07.11.1990 | Language: | EN | [1990/45] | Type: | A3 Search report | No.: | EP0396239 | Date: | 27.03.1991 | Language: | EN | [1991/13] | Type: | B1 Patent specification | No.: | EP0396239 | Date: | 14.09.1994 | Language: | EN | [1994/37] | Search report(s) | (Supplementary) European search report - dispatched on: | EP | 07.02.1991 | Classification | IPC: | C30B25/14, C23C16/44 | [1991/19] | CPC: |
C23C16/45514 (EP,US);
H01L21/205 (KR);
C23C16/455 (EP,US);
C23C16/45591 (EP,US);
C30B25/14 (EP,US)
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| Former IPC [1990/45] | C30B25/14 | Designated contracting states | DE, FR, GB, NL [1990/45] | Title | German: | Vorrichtung zur Herstellung von Halbleitern durch Abscheidung aus der Gasphase | [1990/45] | English: | Apparatus for producing semiconductors by vapour phase deposition | [1990/45] | French: | Appareillage pour la production de semi-conducteurs par dépôt à partir de la phase gazeuse | [1990/45] | Examination procedure | 10.09.1991 | Examination requested [1991/45] | 08.11.1993 | Despatch of communication of intention to grant (Approval: No) | 04.03.1994 | Despatch of communication of intention to grant (Approval: later approval) | 09.03.1994 | Communication of intention to grant the patent | 31.05.1994 | Fee for grant paid | 31.05.1994 | Fee for publishing/printing paid | Opposition(s) | 15.06.1995 | No opposition filed within time limit [1995/36] | Fees paid | Renewal fee | 27.03.1992 | Renewal fee patent year 03 | 23.03.1993 | Renewal fee patent year 04 | 21.03.1994 | Renewal fee patent year 05 |
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| Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Documents cited: | Search | [A]JP59104117 ; | [A]US3916822 (ROBINSON MCDONALD) | [A] - PATENT ABSTRACTS OF JAPAN, vol. 8, no. 221 (E-271)[1658], 1st October 1984; & JP-A-59 104 117 (KOGYO GIJUTSUIN (JAPAN)) 15-06-1984, & JP59104117 A 00000000 |