Extract from the Register of European Patents

EP About this file: EP0416805

EP0416805 - Transistor with voltage clamp [Right-click to bookmark this link]
StatusNo opposition filed within time limit
Status updated on  26.09.1997
Database last updated on 18.03.2026
Most recent event   Tooltip20.11.2009Change - representativepublished on 23.12.2009  [2009/52]
Applicant(s)For all designated states
SILICONIX, INC.
2201 Laurelwood Road (MS 36) Santa Clara
California 95054 / US
[N/P]
Former [1991/11]For all designated states
SILICONIX, INC.
2201 Laurelwood Road (MS 36)
Santa Clara, California 95054 / US
Inventor(s)01 / Yilmaz, Hamza
18549 Paseo Pueblo
Saratoga, California 95070 / US
02 / Bencuya, Izak
6220 Tracel Drive
San Jose, California 95129 / US
[1991/14]
Former [1991/11]01 / Yilmaz, Hamza
450 N. Mathilda Avenue M208
Sunnyvale, California 94086 / US
02 / Bencuya, Izak
6220 Tracel Drive
San Jose, California 95129 / US
Representative(s)Jones, Ian, et al
W.P. Thompson & Co. Celcon House 289-293 High Holborn
London WC1V 7HU / GB
[2009/52]
Former [1991/11]Jones, Ian, et al
W.P. THOMPSON & CO. Celcon House 289-293 High Holborn
London WC1V 7HU / GB
Application number, filing date90309443.129.08.1990
[1991/11]
Priority number, dateUS1989040084830.08.1989         Original published format: US 400848
[1991/11]
Filing languageEN
Procedural languageEN
PublicationType: A2 Application without search report 
No.:EP0416805
Date:13.03.1991
Language:EN
[1991/11]
Type: A3 Search report 
No.:EP0416805
Date:27.03.1991
Language:EN
[1991/13]
Type: B1 Patent specification 
No.:EP0416805
Date:20.11.1996
Language:EN
[1996/47]
Search report(s)(Supplementary) European search report - dispatched on:EP04.02.1991
ClassificationIPC:H01L29/06, H01L29/739, H01L29/78, // H01L27/07
[1996/47]
CPC:
H10D30/0291 (EP,US); H10D12/032 (EP,US); H10D12/441 (EP,US);
H10D18/655 (EP,US); H10D30/66 (EP); H10D62/108 (EP,US);
H10D62/125 (EP,US); H10D62/127 (EP,US); H10D62/393 (EP,US);
H10D64/519 (EP,US); H10D84/148 (EP,US) (-)
Former IPC [1991/11]H01L29/06, H01L29/72, H01L29/784, H01L29/74, // H01L27/07
Designated contracting statesDE,   IT,   NL [1991/11]
TitleGerman:Transistor mit Spannungsbegrenzungsanordnung[1991/11]
English:Transistor with voltage clamp[1991/11]
French:Transistor comportant un limiteur de tension[1991/11]
Examination procedure26.09.1991Examination requested  [1991/48]
14.10.1993Despatch of a communication from the examining division (Time limit: M04)
20.09.1994Despatch of a communication from the examining division (Time limit: M06)
30.03.1995Reply to a communication from the examining division
17.07.1995Despatch of communication of intention to grant (Approval: Yes)
30.01.1996Communication of intention to grant the patent
12.04.1996Fee for grant paid
12.04.1996Fee for publishing/printing paid
Opposition(s)21.08.1997No opposition filed within time limit [1997/46]
Fees paidRenewal fee
10.08.1992Renewal fee patent year 03
31.08.1993Renewal fee patent year 04
25.08.1994Renewal fee patent year 05
25.07.1995Renewal fee patent year 06
19.08.1996Renewal fee patent year 07
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Documents cited:Search[A] JP59149058  
 [A] JP60249367  
 [A]   PATENT ABSTRACTS OF JAPAN, vol. 8, no. 281 (E-286)[1718], 21st December 1984; & JP-A-59 149 058 (MATSUSHITA DENKO K.K.) 25-08-1984 [A]
 [A]   PATENT ABSTRACTS OF JAPAN, vol. 10, no. 113 (E-399)[2170], 26th April 1986; & JP-A-60 249 367 (HITACHI SEISAKUSHO K.K.) 10-12-1985 [A]
 [A]   IEEE ELECTRON DEVICE LETTERS, vol. EDL-6, no. 7, July 1985, pages 378-380, IEEE, New York, US; A. NAKAGAWA: "600- and 1200-V bipolar-mode MOSFET's with high current capability" [A]
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