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EP0430691
European procedure
Extract from the Register of European Patents
EP About this file: EP0430691
| EP0430691 - Semiconductor heterostructures [Right-click to bookmark this link] | Status | No opposition filed within time limit Status updated on 01.04.1995 Database last updated on 21.05.2024 | Most recent event Tooltip | 01.04.1995 | No opposition filed within time limit | published on 24.05.1995 [1995/21] | Applicant(s) | For all designated states Xerox Corporation Xerox Square Rochester New York 14644 / US | [N/P] |
| Former [1991/23] | For all designated states XEROX CORPORATION Xerox Square Rochester New York 14644 / US | Inventor(s) | 01 /
Thornton, Robert L. 123 Mission Drive East Palo Alto, California, 94303 / US | [1991/23] | Representative(s) | Weatherald, Keith Baynes, et al Rank Xerox Ltd Patent Department Parkway Marlow Buckinghamshire SL7 1YL / GB | [N/P] |
| Former [1991/23] | Weatherald, Keith Baynes, et al Rank Xerox Ltd Patent Department Parkway Marlow Buckinghamshire SL7 1YL / GB | Application number, filing date | 90312999.7 | 29.11.1990 | [1991/23] | Priority number, date | US19890443999 | 30.11.1989 Original published format: US 443999 | [1991/23] | Filing language | EN | Procedural language | EN | Publication | Type: | A2 Application without search report | No.: | EP0430691 | Date: | 05.06.1991 | Language: | EN | [1991/23] | Type: | A3 Search report | No.: | EP0430691 | Date: | 21.11.1991 | Language: | EN | [1991/47] | Type: | B1 Patent specification | No.: | EP0430691 | Date: | 01.06.1994 | Language: | EN | [1994/22] | Search report(s) | (Supplementary) European search report - dispatched on: | EP | 02.10.1991 | Classification | IPC: | H01S3/19, H01S3/085, H01L29/72, H01L27/15, H01S3/109 | [1994/22] | CPC: |
H01S5/187 (EP,US);
H01S5/026 (EP,US);
H01S5/0422 (EP,US);
H01S5/12 (EP,US);
H01S5/005 (EP,US);
H01S5/0605 (EP,US);
H01S5/06203 (EP,US)
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| Former IPC [1991/23] | H01S3/19, H01S3/085, H01L29/72 | Designated contracting states | DE, FR, GB [1991/23] | Title | German: | Halbleiter-Heterostrukturen | [1991/23] | English: | Semiconductor heterostructures | [1991/23] | French: | Hétérostructures semi-conductrices | [1991/23] | Examination procedure | 29.04.1992 | Examination requested [1992/26] | 09.02.1993 | Despatch of a communication from the examining division (Time limit: M04) | 24.05.1993 | Reply to a communication from the examining division | 14.07.1993 | Despatch of communication of intention to grant (Approval: Yes) | 23.11.1993 | Communication of intention to grant the patent | 02.12.1993 | Fee for grant paid | 02.12.1993 | Fee for publishing/printing paid | Opposition(s) | 02.03.1995 | No opposition filed within time limit [1995/21] | Fees paid | Renewal fee | 25.09.1992 | Renewal fee patent year 03 | 28.09.1993 | Renewal fee patent year 04 |
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| Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Documents cited: | Search | [A]JP1020690 ; | [A]EP0322847 (CANON KK [JP]) | [A] - IEEE TRANSACTIONS ON ELECTRON DEVICES, vol. 35, no. 12, December 1988, pages 2456-2457, New York, US; R.L. THORNTON et al.: "Unified planar process for fabricating heterojunction bipolar transistors and buried heterostructure lasers utilizing impurity-induced disordering" | [AD] - IEEE TRANSACTIONS ON ELECTRON DEVICES, vol. 36, no. 10, October 1989, pages 2156-2164, New York, US; R.L. THORNTON et al.: "Demonstration and properties of a planar heterojunction bipolar transistor with lateral current flow" | [A] - ELECTRONICS LETTERS, vol. 24, no. 2, 21st January 1988, pages 97-99, Stevenage, Herts, GB; F. BRILLOUET et al.: "New low capacitance transverse junction stripe AlGaAs/GaAs laser for planar laser-MESFET integration" | [A] - APPLIED PHYSICS LETTERS, vol. 50, no. 25, 22nd June 1987, pages 1788-1790, New York, US; K. MITSUNAGA et al.: "CW surface-emitting grating-coupled GaAs/AlGaAs distributed feedback laser with very narrow beam divergence" | [A] - PATENT ABSTRACTS OF JAPAN, vol. 13, no. 198 (E-756), 11th May 1989; & JP-A-1 020 690 (MITSUBISHI ELECTRIC CORP.) 24-01-1989, & JP1020690 A 00000000 | [AP] - APPLIED PHYSICS LETTERS, vol. 56, no. 17, 23rd April 1990, pages 1670-1672, New York, US; R.L. THORNTON et al.: "Achievement of high gain in a multiple quantum channel lateral heterojunction bipolar transistor" |