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Extract from the Register of European Patents

EP About this file: EP0452495

EP0452495 - MISFET AND METHOD OF PRODUCING THE SAME [Right-click to bookmark this link]
StatusThe application is deemed to be withdrawn
Status updated on  18.03.1992
Database last updated on 18.10.2024
Most recent event   Tooltip18.03.1992Application deemed to be withdrawnpublished on 06.05.1992 [1992/19]
Applicant(s)For all designated states
Seiko Instruments Inc.
31-1, Kameido 6-chome Koto-ku
Tokyo 136 / JP
[N/P]
Former [1991/43]For all designated states
SEIKO INSTRUMENTS INC.
31-1, Kameido 6-chome Koto-ku
Tokyo 136 / JP
Inventor(s)01 / SAITO, Naoto, c/o Seiko Instruments Inc.
31-1, Kameido 6-chome, Koto-ku
Tokyo 136 / JP
[1991/44]
Former [1991/43]01 / SAITO, Naoto Seiko Instruments Inc.
31-1, Kameido 6-chome Koto-ku
Tokyo 136 / JP
Representative(s)Fleuchaus, Leo, et al
Fleuchaus & Gallo Melchiorstrasse 42
81479 München / DE
[N/P]
Former [1991/43]Fleuchaus, Leo, Dipl.-Ing., et al
Melchiorstrasse 42
D-81479 München / DE
Application number, filing date90910925.816.07.1990
[1991/43]
WO1990JP00917
Priority number, dateJP1989019474927.07.1989         Original published format: JP 19474989
JP1989019475027.07.1989         Original published format: JP 19475089
[1991/43]
Filing languageJA
Procedural languageEN
PublicationType: A1 Application with search report
No.:WO9102379
Date:21.02.1991
Language:EN
[1991/05]
Type: A1 Application with search report 
No.:EP0452495
Date:23.10.1991
Language:EN
The application published by WIPO in one of the EPO official languages on 21.02.1991 takes the place of the publication of the European patent application.
[1991/43]
Search report(s)International search report - published on:JP21.02.1991
(Supplementary) European search report - dispatched on:EP02.08.1991
ClassificationIPC:H01L29/784
[1991/43]
CPC:
H01L29/6659 (EP); H01L29/7836 (EP)
Designated contracting statesDE,   FR,   GB,   NL [1991/43]
TitleGerman:MISFET UND HERSTELLUNGSVERFAHREN[1991/43]
English:MISFET AND METHOD OF PRODUCING THE SAME[1991/43]
French:TRANSISTOR A EFFET DE CHAMP MIS ET PROCEDE DE PRODUCTION D'UN TEL TRANSISTOR[1991/43]
File destroyed:22.02.2000
Entry into regional phase12.03.1991Translation filed 
12.03.1991National basic fee paid 
12.03.1991Search fee paid 
12.03.1991Designation fee(s) paid 
12.03.1991Examination fee paid 
Examination procedure12.03.1991Examination requested  [1991/44]
28.03.1991Application deemed to be withdrawn, date of legal effect  [1992/19]
09.12.1991Despatch of communication that the application is deemed to be withdrawn, reason: reply to the communication from the examining division not received in time  [1992/19]
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Documents cited:Search[X]DE3530065  ;
 [X]US4597824  ;
 [XP]EP0355691  ;
 [X]US4808544  ;
 [A]JPS63142677
 [X]  - PROC. 1987 INT. SYMP. VLSI TECHNOLOGY, SYSTEM AND APPLICATION (TAIPEI)pages 260 - 264; Tiao-yuan Huang et al.: "ELIMINATING SPACER-INDUCED DEGRATIONS IN LDD TRANSISTORS"
 [A]  - PATENT ABSTRACTS OF JAPAN, vol. 012, no. 402 (E-673) 25 October 1988& JP-A-63 142 677 (SEIKO INSTR & ELECTRONICS LTD) 15 June 1988,
International search[X]JPS63217664  ;
 [X]JPS63168050  ;
 [Y]JPS63275181  ;
 [Y]JPS63244884
The EPO accepts no responsibility for the accuracy of data originating from other authorities; in particular, it does not guarantee that it is complete, up to date or fit for specific purposes.