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Extract from the Register of European Patents

EP About this file: EP0466051

EP0466051 - Non-volatile progammable read only memory device having memory cells each implemented by a memory transistor and a switching transistor coupled in parallel and method of memorizing a data bit [Right-click to bookmark this link]
StatusNo opposition filed within time limit
Status updated on  17.01.1997
Database last updated on 05.10.2024
Most recent event   Tooltip17.01.1997No opposition filed within time limitpublished on 05.03.1997 [1997/10]
Applicant(s)For all designated states
NEC Corporation
7-1, Shiba 5-chome Minato-ku
Tokyo 108-8001 / JP
[N/P]
Former [1992/03]For all designated states
NEC CORPORATION
7-1, Shiba 5-chome Minato-ku
Tokyo / JP
Inventor(s)01 / Koyama, Shoji, c/o NEC Corporation
7-1, Shiba 5-chome
Minato-ku, Tokyo / JP
[1992/03]
Representative(s)Glawe, Delfs, Moll
Partnerschaft mbB von
Patent- und Rechtsanwälten
Postfach 26 01 62
80058 München / DE
[N/P]
Former [1992/03]Glawe, Delfs, Moll & Partner
Patentanwälte Postfach 26 01 62
D-80058 München / DE
Application number, filing date91111235.705.07.1991
[1992/03]
Priority number, dateJP1990018481611.07.1990         Original published format: JP 18481690
[1992/03]
Filing languageEN
Procedural languageEN
PublicationType: A2 Application without search report 
No.:EP0466051
Date:15.01.1992
Language:EN
[1992/03]
Type: A3 Search report 
No.:EP0466051
Date:07.01.1993
Language:EN
[1993/01]
Type: B1 Patent specification 
No.:EP0466051
Date:13.03.1996
Language:EN
[1996/11]
Search report(s)(Supplementary) European search report - dispatched on:EP13.11.1992
ClassificationIPC:G11C16/04
[1992/03]
CPC:
G11C16/0483 (EP,US)
Designated contracting statesDE,   FR,   GB [1992/03]
TitleGerman:Programmierbarer nichtflüchtiger Festwertspeicher mit Speicherzellen, jeder mit einem Speichertransistor und einem parallel gekoppelten Schalttransistor und Verfahren zur Speicherung eines Datenbit[1992/03]
English:Non-volatile progammable read only memory device having memory cells each implemented by a memory transistor and a switching transistor coupled in parallel and method of memorizing a data bit[1992/03]
French:Dispositif de mémoire morte nonvolatile programmable ayant des cellules de mémoire chacune comprenant entre autres un transistor de mémoire et un transistor de commutation couplé en parallèle et méthode d'emmagasinage d'un bit de donnée[1992/03]
Examination procedure05.07.1991Examination requested  [1992/03]
12.05.1995Despatch of communication of intention to grant (Approval: Yes)
19.09.1995Communication of intention to grant the patent
Opposition(s)14.12.1996No opposition filed within time limit [1997/10]
Fees paidRenewal fee
16.07.1993Renewal fee patent year 03
20.07.1994Renewal fee patent year 04
18.07.1995Renewal fee patent year 05
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Documents cited:Search[Y]EP0135824  (FUJITSU LTD [JP]);
 [YP]EP0419663  (TOSHIBA KK [JP], et al)
The EPO accepts no responsibility for the accuracy of data originating from other authorities; in particular, it does not guarantee that it is complete, up to date or fit for specific purposes.