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EP0472970
European procedure
Extract from the Register of European Patents
EP About this file: EP0472970
| EP0472970 - Process for growing crystalline thin film [Right-click to bookmark this link] | Status | No opposition filed within time limit Status updated on 16.05.1997 Database last updated on 24.07.2024 | Most recent event Tooltip | 07.12.2007 | Lapse of the patent in a contracting state | published on 09.01.2008 [2008/02] | Applicant(s) | For all designated states CANON KABUSHIKI KAISHA 30-2, 3-chome, Shimomaruko, Ohta-ku Tokyo / JP | [N/P] |
| Former [1992/10] | For all designated states CANON KABUSHIKI KAISHA 30-2, 3-chome, Shimomaruko, Ohta-ku Tokyo / JP | Inventor(s) | 01 /
Kumomi, Hideya, c/o Canon Kabushiki Kaisha 30-2, 3-chome, Shimomaruko Ohta-ku, Tokyo / JP | [1992/10] | Representative(s) | Bühling, Gerhard Patentanwaltsbüro Tiedtke-Bühling-Kinne & Partner Bavariaring 4 80336 München / DE | [N/P] |
| Former [1992/10] | Bühling, Gerhard, Dipl.-Chem. Patentanwaltsbüro Tiedtke-Bühling-Kinne & Partner Bavariaring 4 D-80336 München / DE | Application number, filing date | 91113264.5 | 07.08.1991 | [1992/10] | Priority number, date | JP19900208174 | 08.08.1990 Original published format: JP 20817490 | [1992/10] | Filing language | EN | Procedural language | EN | Publication | Type: | A2 Application without search report | No.: | EP0472970 | Date: | 04.03.1992 | Language: | EN | [1992/10] | Type: | A3 Search report | No.: | EP0472970 | Date: | 08.04.1992 | Language: | EN | [1992/15] | Type: | B1 Patent specification | No.: | EP0472970 | Date: | 10.07.1996 | Language: | EN | [1996/28] | Search report(s) | (Supplementary) European search report - dispatched on: | EP | 20.02.1992 | Classification | IPC: | C30B1/02, C30B29/06 | [1992/10] | CPC: |
C30B1/023 (EP,US);
C30B29/06 (EP,US);
Y10S117/913 (EP,US)
| Designated contracting states | DE, FR, GB, IT, NL [1992/10] | Title | German: | Verfahren zur Züchtung eines dünnen kristallinen Films | [1992/10] | English: | Process for growing crystalline thin film | [1992/10] | French: | Procédé pour la croissance d'un film mince cristallin | [1992/10] | Examination procedure | 25.08.1992 | Examination requested [1992/43] | 29.04.1994 | Despatch of a communication from the examining division (Time limit: M06) | 07.11.1994 | Reply to a communication from the examining division | 31.01.1995 | Despatch of a communication from the examining division (Time limit: M06) | 02.08.1995 | Reply to a communication from the examining division | 04.09.1995 | Despatch of communication of intention to grant (Approval: Yes) | 10.01.1996 | Communication of intention to grant the patent | 10.04.1996 | Fee for grant paid | 10.04.1996 | Fee for publishing/printing paid | Opposition(s) | 11.04.1997 | No opposition filed within time limit [1997/27] | Fees paid | Renewal fee | 26.08.1993 | Renewal fee patent year 03 | 30.08.1994 | Renewal fee patent year 04 | 29.08.1995 | Renewal fee patent year 05 |
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| Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Lapses during opposition Tooltip | FR | 10.07.1996 | IT | 10.07.1996 | [2008/02] |
| Former [2004/35] | FR | 10.07.1996 | |
| IT | 10.07.1996 | ||
| Former [1999/42] | IT | 10.07.1996 | |
| FR | 06.12.1996 | ||
| Former [1997/18] | FR | 06.12.1996 | Documents cited: | Search | [X]JP61261285 ; | [A]JP62167295 ; | [YD]JPS63253616 (SONY CORP); | [A]EP0306154 (CANON KK [JP]) | [X] - PATENT ABSTRACTS OF JAPAN, vol. 11, no. 124 (C-416)[2571], 17th April 1987; & JP-A-61 261 285 (NEC CORP.) 19-11-1986, & JP61261285 A 00000000 | [AD] - J. APPL. PHYSICS, vol. 65, no. 10, 15th May 1989, pages 4036-4039, New York, US; I.-W. WU et al.: "Retardation of nucleation rate for grain size enhancement by deep silicon ion implantation of low-pressure chemical vapor deposited amorphous silicon films" | [A] - PATENT ABSTRACTS OF JAPAN, vol. 12, no. 11 (C-468)[2858], 13th january 1988; & JP-A-62 167 295 (NEC CORP.) 23-07-1987, & JP62167295 A 00000000 | [AD] - ELECTRONIC LETTERS, vol. 17, no. 17, 20th August 1981, pages 586-588; R. REIF et al.: "Low-temperature process to increase the grain size in polysilicon films" | Examination | - J. APPL. PHYSICS, vol. 65, no. 10, 15th May 1989, pages 4036-4039, New York, US; Summary page 4039 |