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EP0487083
European procedure
Extract from the Register of European Patents
EP About this file: EP0487083
| EP0487083 - SOI type vertical channel field effect transistor and process of manufacturing the same [Right-click to bookmark this link] | Status | No opposition filed within time limit Status updated on 18.07.1997 Database last updated on 03.09.2024 | Most recent event Tooltip | 18.07.1997 | No opposition filed within time limit | published on 03.09.1997 [1997/36] | Applicant(s) | For all designated states Sony Corporation 7-35, Kitashinagawa 6-chome Shinagawa-ku Tokyo / JP | [N/P] |
| Former [1992/22] | For all designated states SONY CORPORATION 7-35, Kitashinagawa 6-chome Shinagawa-ku Tokyo / JP | Inventor(s) | 01 /
Miyazawa, Yoshihiro c/o Sony Corporation, 7-35 Kitashinagawa 6-chome Shinagawa-ku, Tokyo / JP | [1992/22] | Representative(s) | Müller, Frithjof E. Müller Hoffmann & Partner Patentanwälte Innere Wiener Strasse 17 81667 München / DE | [N/P] |
| Former [1997/12] | Müller, Frithjof E., Dipl.-Ing. Patentanwälte MÜLLER & HOFFMANN, Innere Wiener Strasse 17 81667 München / DE | ||
| Former [1992/22] | TER MEER - MÜLLER - STEINMEISTER & PARTNER Mauerkircherstrasse 45 D-81679 München / DE | Application number, filing date | 91119874.5 | 21.11.1991 | [1992/22] | Priority number, date | JP19900319597 | 23.11.1990 Original published format: JP 31959790 | JP19900319596 | 23.11.1990 Original published format: JP 31959690 | JP19900319398 | 24.11.1990 Original published format: JP 31939890 | [1992/22] | Filing language | EN | Procedural language | EN | Publication | Type: | A2 Application without search report | No.: | EP0487083 | Date: | 27.05.1992 | Language: | EN | [1992/22] | Type: | A3 Search report | No.: | EP0487083 | Date: | 26.08.1992 | Language: | EN | [1992/35] | Type: | B1 Patent specification | No.: | EP0487083 | Date: | 11.09.1996 | Language: | EN | [1996/37] | Search report(s) | (Supplementary) European search report - dispatched on: | EP | 09.07.1992 | Classification | IPC: | H01L29/772, H01L21/336, H01L21/331 | [1996/37] | CPC: |
H01L29/66666 (EP,US);
H01L29/772 (KR);
H01L29/66909 (EP,US);
H01L29/78642 (EP,US)
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| Former IPC [1992/35] | H01L29/784, H01L21/336, H01L21/331 | ||
| Former IPC [1992/22] | H01L29/784, H01L21/331 | Designated contracting states | DE, FR, GB [1992/22] | Title | German: | Vertikaler SOI-Feldeffekttransistor und dessen Herstellungsprozess | [1992/22] | English: | SOI type vertical channel field effect transistor and process of manufacturing the same | [1992/22] | French: | Transistor à effet de champ à canal vertical du type SOI et procédé pour sa fabrication | [1992/22] | Examination procedure | 20.01.1993 | Examination requested [1993/11] | 12.10.1994 | Despatch of a communication from the examining division (Time limit: M04) | 14.02.1995 | Reply to a communication from the examining division | 24.02.1995 | Despatch of a communication from the examining division (Time limit: M04) | 23.05.1995 | Reply to a communication from the examining division | 09.06.1995 | Despatch of a communication from the examining division (Time limit: M04) | 16.08.1995 | Reply to a communication from the examining division | 31.10.1995 | Despatch of communication of intention to grant (Approval: Yes) | 15.03.1996 | Communication of intention to grant the patent | 13.06.1996 | Fee for grant paid | 13.06.1996 | Fee for publishing/printing paid | Opposition(s) | 12.06.1997 | No opposition filed within time limit [1997/36] | Fees paid | Renewal fee | 16.11.1993 | Renewal fee patent year 03 | 15.11.1994 | Renewal fee patent year 04 | 09.11.1995 | Renewal fee patent year 05 |
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| Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Documents cited: | Search | [A]US4523963 (OHTA TAKAO [JP], et al); | [A]EP0166003 (HITACHI LTD [JP]); | [A]EP0377084 (TOSHIBA KK [JP]) | Examination | JPH06340376 |