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Extract from the Register of European Patents

EP About this file: EP0548407

EP0548407 - Tungsten chemical vapor deposition method [Right-click to bookmark this link]
StatusNo opposition filed within time limit
Status updated on  24.01.1997
Database last updated on 20.07.2024
Most recent event   Tooltip17.02.2006Change - lapse in a contracting state
Updated state(s): FR
published on 05.04.2006  [2006/14]
Applicant(s)For all designated states
SMALL POWER COMMUNICATION SYSTEMS RESEARCH LABORATORIES CO., LTD.
Mubanchi, Kawauchi, Aoba-ku Sendai-shi
Miyagi-ken / JP
[N/P]
Former [1993/26]For all designated states
SMALL POWER COMMUNICATION SYSTEMS RESEARCH LABORATORIES CO., LTD.
Mubanchi, Kawauchi, Aoba-ku
Sendai-shi, Miyagi-ken / JP
Inventor(s)01 / Hirano, Kiichi, Small Power Communication Systems
Research Lab., Co., Ltd., Mubanchi, Kawauchi
Aoba-ku, Sendai-shi, Miyagi-ken / JP
02 / Takeda, Nobuo, Small Power Communication Systems
Research Lab., Co., Ltd., Mubanchi, Kawauchi
Aoba-ku, Sendai-shi, Miyagi-ken / JP
[1993/26]
Representative(s)Sajda, Wolf E., et al
Meissner Bolte Patentanwälte
Rechtsanwälte Partnerschaft mbB
Widenmayerstrasse 47
80538 München / DE
[N/P]
Former [1993/26]Sajda, Wolf E., Dipl.-Phys., et al
MEISSNER, BOLTE & PARTNER Widenmayerstrasse 48
D-80538 München / DE
Application number, filing date91122326.127.12.1991
[1993/26]
Filing languageEN
Procedural languageEN
PublicationType: A1 Application with search report 
No.:EP0548407
Date:30.06.1993
Language:EN
[1993/26]
Type: B1 Patent specification 
No.:EP0548407
Date:20.03.1996
Language:EN
[1996/12]
Search report(s)(Supplementary) European search report - dispatched on:EP03.10.1992
ClassificationIPC:C23C16/14, C23C16/52, H01L21/285, C23C16/08
[1993/26]
CPC:
C23C16/14 (EP); C23C16/52 (EP); H01L21/28562 (EP)
Designated contracting statesDE,   FR [1993/26]
TitleGerman:CVD-Verfahren zur Herstellung von Wolfram[1993/26]
English:Tungsten chemical vapor deposition method[1993/26]
French:Méthode de dépôt chimique en phase vapeur de tungstene[1993/26]
Examination procedure27.12.1991Examination requested  [1993/26]
19.01.1994Despatch of a communication from the examining division (Time limit: M06)
29.07.1994Reply to a communication from the examining division
13.04.1995Despatch of communication of intention to grant (Approval: Yes)
24.08.1995Communication of intention to grant the patent
30.11.1995Fee for grant paid
30.11.1995Fee for publishing/printing paid
Opposition(s)21.12.1996No opposition filed within time limit [1997/11]
Fees paidRenewal fee
30.12.1993Renewal fee patent year 03
27.12.1994Renewal fee patent year 04
28.12.1995Renewal fee patent year 05
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Lapses during opposition  TooltipFR20.03.1996
[2006/14]
Former [1997/12]FR14.08.1996
Documents cited:Search[A]US4823291  ;
 [A]EP0252667
 [Y]  - A. NISHIYAMA ET AL '1988 SYMPOSIUM ON VLSI TECHNOLOGY' 10 May 1988 , THE IEEE ELECTRON DEVICES SOCIETY , SAN DIEGO, USA
 [Y]  - SOLID STATE TECHNOLOGY vol. 28, no. 12, 1 December 1985, NEW YORK, USA pages 51 - 59; E.K. BROADBENT ET AL.: 'SELECTIVE TUNGSTEN PROCESSING BY LOW PRESSURE CVD'
 [A]  - JOURNAL OF THE ELECTROCHEMICAL SOCIETY vol. 138, no. 3, 1 March 1991, MANCHESTER, NH, USA pages 783 - 788; J. HOLLEMAN ET AL.: 'A REFLECTOMETRIC STUDY OF THE REACTION BETWEEN SI AND WF6 DURING W-LPCVD ON SI AND OF THE RENUCLEATION DURING THE H2 REDUCTION OF WF6'
The EPO accepts no responsibility for the accuracy of data originating from other authorities; in particular, it does not guarantee that it is complete, up to date or fit for specific purposes.