Extract from the Register of European Patents

EP About this file: EP0453026

EP0453026 - Process for forming a buried drain or collector region in monolithic semiconductor devices [Right-click to bookmark this link]
StatusNo opposition filed within time limit
Status updated on  28.04.2000
Database last updated on 19.03.2026
Most recent event   Tooltip28.04.2000No opposition filed within time limitpublished on 14.06.2000 [2000/24]
Applicant(s)For all designated states
Consorzio per la Ricerca sulla Microelettronica nel Mezzogiorno - CoRiMMe
Stradale Primosole, 50
95121 Catania / IT
[N/P]
Former [1999/26]For all designated states
Consorzio per la Ricerca sulla Microelettronica nel Mezzogiorno - CoRiMMe
Stradale Primosole, 50
95100 Catania / IT
Former [1991/43]For all designated states
CONSORZIO PER LA RICERCA SULLA MICROELETTRONICA NEL MEZZOGIORNO
Stradale Primosole, 50
I-95121 Catania / IT
Inventor(s)01 / Zambrano, Raffaele
Via Duca d'Aosta 43/A
I-95037 San Giovanni La Punta CT / IT
[1992/19]
Former [1991/43]01 / Zambrano, Raffaele
Via Duca d'Aosta 43/A
I-95037 Catania CT / IT
Representative(s)Arena, Giovanni
Viale Certosa 135
20151 Milano / IT
[N/P]
Former [1991/43]Arena, Giovanni
Viale Certosa 135
I-20151 Milano / IT
Application number, filing date91200853.911.04.1991
[1991/43]
Priority number, dateIT1990000660920.04.1990         Original published format: IT 660990
[1991/43]
Filing languageIT
Procedural languageEN
PublicationType: A2 Application without search report 
No.:EP0453026
Date:23.10.1991
Language:EN
[1991/43]
Type: A3 Search report 
No.:EP0453026
Date:15.02.1995
Language:EN
[1995/07]
Type: B1 Patent specification 
No.:EP0453026
Date:30.06.1999
Language:EN
[1999/26]
Search report(s)(Supplementary) European search report - dispatched on:EP29.12.1994
ClassificationIPC:H01L21/74, H01L29/06
[1995/18]
CPC:
H10D30/66 (EP,US); H10D30/0291 (EP,US); H10D62/157 (EP,US);
H10D84/0109 (EP,US); H10D84/0112 (EP,US); H10D84/038 (EP,US);
H10W15/00 (EP,US); H10W15/01 (EP,US); H10D62/151 (EP,US);
Y10S148/126 (EP,US); Y10S438/98 (EP,US) (-)
Former IPC [1991/43]H01L21/74
Designated contracting statesDE,   FR,   GB [1991/43]
TitleGerman:Verfahren zur Herstellung einer vergrabenen Drain- oder Kollektorzone für monolythische Halbleiteranordnungen[1991/43]
English:Process for forming a buried drain or collector region in monolithic semiconductor devices[1991/43]
French:Procédé pour la formation d'une région de drain et de collecteur enterrée pour dispositifs semi-conducteurs monolithiques[1991/43]
Examination procedure27.02.1995Examination requested  [1995/17]
02.08.1995Despatch of a communication from the examining division (Time limit: M06)
06.02.1996Reply to a communication from the examining division
02.12.1996Despatch of a communication from the examining division (Time limit: M06)
03.06.1997Reply to a communication from the examining division
10.10.1997Despatch of a communication from the examining division (Time limit: M06)
02.04.1998Reply to a communication from the examining division
21.10.1998Despatch of communication of intention to grant (Approval: Yes)
05.11.1998Communication of intention to grant the patent
08.01.1999Fee for grant paid
08.01.1999Fee for publishing/printing paid
Opposition(s)31.03.2000No opposition filed within time limit [2000/24]
Fees paidRenewal fee
21.04.1993Renewal fee patent year 03
18.04.1994Renewal fee patent year 04
12.04.1995Renewal fee patent year 05
12.04.1996Renewal fee patent year 06
07.04.1997Renewal fee patent year 07
20.04.1998Renewal fee patent year 08
23.04.1999Renewal fee patent year 09
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Documents cited:Search[Y]   PATENT ABSTRACTS OF JAPAN [Y] 9
 [Y]   PATENT ABSTRACTS OF JAPAN [Y] 9
 [PA]   PATENT ABSTRACTS OF JAPAN [PA] 1,3,4,6
Examination  Electronics, 2oth November 1980, pages 40-41
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