| EP0453026 - Process for forming a buried drain or collector region in monolithic semiconductor devices [Right-click to bookmark this link] | Status | No opposition filed within time limit Status updated on 28.04.2000 Database last updated on 19.03.2026 | Most recent event Tooltip | 28.04.2000 | No opposition filed within time limit | published on 14.06.2000 [2000/24] | Applicant(s) | For all designated states Consorzio per la Ricerca sulla Microelettronica nel Mezzogiorno - CoRiMMe Stradale Primosole, 50 95121 Catania / IT | [N/P] |
| Former [1999/26] | For all designated states Consorzio per la Ricerca sulla Microelettronica nel Mezzogiorno - CoRiMMe Stradale Primosole, 50 95100 Catania / IT | ||
| Former [1991/43] | For all designated states CONSORZIO PER LA RICERCA SULLA MICROELETTRONICA NEL MEZZOGIORNO Stradale Primosole, 50 I-95121 Catania / IT | Inventor(s) | 01 /
Zambrano, Raffaele Via Duca d'Aosta 43/A I-95037 San Giovanni La Punta CT / IT | [1992/19] |
| Former [1991/43] | 01 /
Zambrano, Raffaele Via Duca d'Aosta 43/A I-95037 Catania CT / IT | Representative(s) | Arena, Giovanni Viale Certosa 135 20151 Milano / IT | [N/P] |
| Former [1991/43] | Arena, Giovanni Viale Certosa 135 I-20151 Milano / IT | Application number, filing date | 91200853.9 | 11.04.1991 | [1991/43] | Priority number, date | IT19900006609 | 20.04.1990 Original published format: IT 660990 | [1991/43] | Filing language | IT | Procedural language | EN | Publication | Type: | A2 Application without search report | No.: | EP0453026 | Date: | 23.10.1991 | Language: | EN | [1991/43] | Type: | A3 Search report | No.: | EP0453026 | Date: | 15.02.1995 | Language: | EN | [1995/07] | Type: | B1 Patent specification | No.: | EP0453026 | Date: | 30.06.1999 | Language: | EN | [1999/26] | Search report(s) | (Supplementary) European search report - dispatched on: | EP | 29.12.1994 | Classification | IPC: | H01L21/74, H01L29/06 | [1995/18] | CPC: |
H10D30/66 (EP,US);
H10D30/0291 (EP,US);
H10D62/157 (EP,US);
H10D84/0109 (EP,US);
H10D84/0112 (EP,US);
H10D84/038 (EP,US);
H10W15/00 (EP,US);
H10W15/01 (EP,US);
H10D62/151 (EP,US);
|
| Former IPC [1991/43] | H01L21/74 | Designated contracting states | DE, FR, GB [1991/43] | Title | German: | Verfahren zur Herstellung einer vergrabenen Drain- oder Kollektorzone für monolythische Halbleiteranordnungen | [1991/43] | English: | Process for forming a buried drain or collector region in monolithic semiconductor devices | [1991/43] | French: | Procédé pour la formation d'une région de drain et de collecteur enterrée pour dispositifs semi-conducteurs monolithiques | [1991/43] | Examination procedure | 27.02.1995 | Examination requested [1995/17] | 02.08.1995 | Despatch of a communication from the examining division (Time limit: M06) | 06.02.1996 | Reply to a communication from the examining division | 02.12.1996 | Despatch of a communication from the examining division (Time limit: M06) | 03.06.1997 | Reply to a communication from the examining division | 10.10.1997 | Despatch of a communication from the examining division (Time limit: M06) | 02.04.1998 | Reply to a communication from the examining division | 21.10.1998 | Despatch of communication of intention to grant (Approval: Yes) | 05.11.1998 | Communication of intention to grant the patent | 08.01.1999 | Fee for grant paid | 08.01.1999 | Fee for publishing/printing paid | Opposition(s) | 31.03.2000 | No opposition filed within time limit [2000/24] | Fees paid | Renewal fee | 21.04.1993 | Renewal fee patent year 03 | 18.04.1994 | Renewal fee patent year 04 | 12.04.1995 | Renewal fee patent year 05 | 12.04.1996 | Renewal fee patent year 06 | 07.04.1997 | Renewal fee patent year 07 | 20.04.1998 | Renewal fee patent year 08 | 23.04.1999 | Renewal fee patent year 09 |
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| Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Documents cited: | Search | [Y] PATENT ABSTRACTS OF JAPAN [Y] 9 | [Y] PATENT ABSTRACTS OF JAPAN [Y] 9 | [PA] PATENT ABSTRACTS OF JAPAN [PA] 1,3,4,6 | Examination | Electronics, 2oth November 1980, pages 40-41 |