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EP0486318
European procedure
Extract from the Register of European Patents
EP About this file: EP0486318
| EP0486318 - Semiconductor device for use in a light valve device, and process for manufacturing the same [Right-click to bookmark this link] | Status | No opposition filed within time limit Status updated on 25.11.2005 Database last updated on 11.05.2024 | Most recent event Tooltip | 25.11.2005 | No opposition filed within time limit | published on 11.01.2006 [2006/02] | Applicant(s) | For all designated states Seiko Instruments Inc. 31-1, Kameido 6-chome Koto-ku Tokyo 136 / JP | [N/P] |
| Former [1992/21] | For all designated states SEIKO INSTRUMENTS INC. 31-1, Kameido 6-chome Koto-ku Tokyo 136 / JP | Inventor(s) | 01 /
Takahashi, Kunihiro c/o Seiko Instruments Inc., 31-1 Kameido, 6-chome Koto-ku, Tokyo / JP | 02 /
Kojima, Yoshikazu c/o Seiko Instruments Inc., 31-1 Kameido, 6-chome Koto-ku, Tokyo / JP | 03 /
Takasu, Hiroaki c/o Seiko Instruments Inc., 31-1 Kameido, 6-chome Koto-ku, Tokyo / JP | 04 /
Matsuyama, Nobuyoshi c/o Seiko Instruments Inc., 31-1 Kameido, 6-chome Koto-ku, Tokyo / JP | 05 /
Niwa, Hitoshi c/o Seiko Instruments Inc., 31-1 Kameido, 6-chome Koto-ku, Tokyo / JP | 06 /
Yoshino, Tomoyuki c/o Seiko Instruments Inc., 31-1 Kameido, 6-chome Koto-ku, Tokyo / JP | 07 /
Yamazaki, Tsuneo c/o Seiko Instruments Inc., 31-1 Kameido, 6-chome Koto-ku, Tokyo / JP | [1992/21] | Representative(s) | Sturt, Clifford Mark, et al Miller Sturt Kenyon 9 John Street London WC1N 2ES / GB | [N/P] |
| Former [1992/21] | Sturt, Clifford Mark, et al J. MILLER & CO. 34 Bedford Row Holborn London WC1R 4JH / GB | Application number, filing date | 91310565.6 | 15.11.1991 | [1992/21] | Priority number, date | JP19900309437 | 15.11.1990 Original published format: JP 30943790 | JP19910006561 | 23.01.1991 Original published format: JP 656191 | JP19910022420 | 16.02.1991 Original published format: JP 2242091 | JP19910079330 | 11.04.1991 Original published format: JP 7933091 | JP19910079337 | 11.04.1991 Original published format: JP 7933791 | [1992/21] | Filing language | EN | Procedural language | EN | Publication | Type: | A1 Application with search report | No.: | EP0486318 | Date: | 20.05.1992 | Language: | EN | [1992/21] | Type: | B1 Patent specification | No.: | EP0486318 | Date: | 19.01.2005 | Language: | EN | [2005/03] | Search report(s) | (Supplementary) European search report - dispatched on: | EP | 24.03.1992 | Classification | IPC: | H01L21/58, H01L21/76, H01L21/84, H01L21/336, G02F1/136 | [1999/05] | CPC: |
H01L27/1266 (EP,US);
H01L29/78 (KR);
G02F1/13454 (EP,US);
H01L21/76264 (EP,US);
H01L27/1214 (EP,US);
H01L29/66772 (EP,US);
H01L29/78648 (EP,US);
G02F1/133512 (EP,US);
G02F1/13613 (EP,US);
G02F2202/105 (EP,US);
H01L21/76289 (EP,US);
H01L2221/68363 (EP,US);
|
| Former IPC [1992/21] | H01L21/336, H01L21/58, H01L21/76, H01L21/84, G02F1/136 | Designated contracting states | DE, FR, GB, IT, NL [1992/21] | Title | German: | Halbleitervorrichtung zur Verwendung in einem Lichtventil und deren Herstellungsmethode | [1992/21] | English: | Semiconductor device for use in a light valve device, and process for manufacturing the same | [1992/21] | French: | Dispositif semi-conducteur pour utilisation dans une vanne de lumière et son procédé de fabrication | [1992/21] | Examination procedure | 04.11.1992 | Examination requested [1992/53] | 01.08.1995 | Despatch of a communication from the examining division (Time limit: M06) | 07.02.1996 | Reply to a communication from the examining division | 29.11.1996 | Despatch of a communication from the examining division (Time limit: M06) | 06.06.1997 | Reply to a communication from the examining division | 10.12.1998 | Date of oral proceedings | 20.04.1999 | Despatch of communication of intention to grant (Approval: No) | 20.04.1999 | Minutes of oral proceedings despatched | 18.10.1999 | Despatch of communication of intention to grant (Approval: later approval) | 03.11.1999 | Despatch of a communication from the examining division (Time limit: M04) | 03.12.1999 | Despatch of a communication from the examining division (Time limit: M04) | 13.04.2000 | Reply to a communication from the examining division | 23.07.2004 | Communication of intention to grant the patent | 18.10.2004 | Fee for grant paid | 18.10.2004 | Fee for publishing/printing paid | Appeal following examination | 22.04.2002 | Appeal received No. T0749/02 | 25.06.2002 | Statement of grounds filed | 20.01.2004 | Result of appeal procedure: remittal for grant | Divisional application(s) | EP00200828.2 / EP1026733 | EP98204180.8 / EP0915503 | Opposition(s) | 20.10.2005 | No opposition filed within time limit [2006/02] | Fees paid | Renewal fee | 29.11.1993 | Renewal fee patent year 03 | 15.11.1994 | Renewal fee patent year 04 | 09.11.1995 | Renewal fee patent year 05 | 11.11.1996 | Renewal fee patent year 06 | 10.11.1997 | Renewal fee patent year 07 | 10.11.1998 | Renewal fee patent year 08 | 12.11.1999 | Renewal fee patent year 09 | 13.11.2000 | Renewal fee patent year 10 | 14.11.2001 | Renewal fee patent year 11 | 13.11.2002 | Renewal fee patent year 12 | 12.11.2003 | Renewal fee patent year 13 | 12.11.2004 | Renewal fee patent year 14 |
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| Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Documents cited: | Search | [Y]EP0211402 (GEN ELECTRIC [US]); | [A]US4024626 (LEUPP ALEX M, et al); | [A]DE2715446 (SIEMENS AG); | [Y]DD134283 ; | [A]EP0164646 (IBM [US]); | [A]GB2206445 (SPECTROL RELIANCE LTD) | [Y] - IEEE TRANSACTIONS ON ELECTRON DEVICES vol. 37, no. 1, January 1990, pages 121-127, New York, US; E. FUJII et al.: "A laser-recrystallization technique for silicon-TFT integrated circuits on quartz substrates and its application to small-size monolithic active-matrix LCD's" | [A] - JAPANESE JOURNAL OF APPLIED PHYSICS vol. 29, no. 4, part 2, April 1990, pages L521-L523, Tokyo, JP; K. ISHII et al.: "Experimental fabrication of XMOS transistors using lateral solid-phase epitaxy of CVD silicon films" | [Y] - FUJITSU SCIENTIFIC AND TECHNICAL JOURNAL vol. 24, no. 4 + index, December 1988, pages 408-417, Kawasaki, JP; H. GOTOU et al.: "SOI-Device on Bonded Wafer" | [A] - JOURNAL OF THE ELECTROMECHANICAL SOCIETY vol. 120, no. 11, November 1973, pages 1563-1566, Manchester, NH, US; G.L. KUHN et al.: "Thin silicon film on insulating substrate" | Examination | - EIJI FUJII, ET AL., "A LASER-RECRYSTALLIZATION TECHNIQUE FOR SILICON-TFT INTEGRATED CIRCUITS ON QUARTZ SUBSTRATES AND ITS APPLICATION TO SMALL-SIZE MONOLITHIC ACTIVE-MATRIX LCD'S.", IEEE TRANSACTIONS ON ELECTRON DEVICES, IEEE SERVICE CENTER, PISACATAWAY, NJ., US, US, (19900101), vol. 37., no. 01., doi:10.1109/16.43808, ISSN 0018-9383, pages 121 - 127., XP000086899 DOI: http://dx.doi.org/10.1109/16.43808 | - KENICHI ISHII, YUTAKA HAYASHI, TOSHIHIRO SEKIGAWA., "EXPERIMENTAL FABRICATION OF XMOS TRANSISTORS USING LATERAL SOLID-PHASE EPITAXY OF CVD SILICON FILMS.", JAPANESE JOURNAL OF APPLIED PHYSICS, Japan Society of Applied Physics, JP, JP, (19900401), vol. 29., no. 04., doi:10.1143/JJAP.29.L521, ISSN 0021-4922, pages L521 - L523., XP000136262 DOI: http://dx.doi.org/10.1143/JJAP.29.L521 | - GOTOU H., ET AL., "SOI-DEVICE ON BONDED WAFER.", FUJITSU-SCIENTIFIC AND TECHNICAL JOURNAL., Fujitsu Ltd., JP, JP, (19881221), vol. 24., no. 04 + INDEX., ISSN 0016-2523, pages 408 - 417., XP000112818 | - G.L.KUHN, "Thin silicon film on insulating substrate", Journal of The Electrochemical Society, Electrochemical Society, (19731101), vol. 120, no. 11, ISSN 0013-4651, pages 1563 - 1566, XP002097278 |