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EP0527194
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EP About this file: EP0527194
| EP0527194 - HIGH DENSITY LOCAL INTERCONNECT IN A SEMICONDUCTOR CIRCUIT USING METAL SILICIDE [Right-click to bookmark this link] | Status | The application is deemed to be withdrawn Status updated on 18.04.1995 Database last updated on 15.06.2024 | Most recent event Tooltip | 18.04.1995 | Application deemed to be withdrawn | published on 07.06.1995 [1995/23] | Applicant(s) | For all designated states QUALITY SEMICONDUCTOR, INC. 851 Martin Avenue Santa Clara, CA 95050-2903 / US | [1993/07] | Inventor(s) | 01 /
MALWAH, Manohar, L. 26460 Taaffe Lane Los Altos Hills, CA 94022 / US | [1993/07] | Representative(s) | Waldren, Robin Michael Marks & Clerk LLP 90 Long Acre London WC2E 9RA / GB | [N/P] |
| Former [1993/07] | Waldren, Robin Michael MARKS & CLERK, 57-60 Lincoln's Inn Fields London WC2A 3LS / GB | Application number, filing date | 91909507.5 | 25.04.1991 | [1993/07] | WO1991US02872 | Priority number, date | US19900518016 | 02.05.1990 Original published format: US 518016 | [1993/07] | Filing language | EN | Procedural language | EN | Publication | Type: | A1 Application with search report | No.: | WO9117576 | Date: | 14.11.1991 | Language: | EN | [1991/26] | Type: | A1 Application with search report | No.: | EP0527194 | Date: | 17.02.1993 | Language: | EN | The application published by WIPO in one of the EPO official languages on 14.11.1991 takes the place of the publication of the European patent application. | [1993/07] | Search report(s) | International search report - published on: | US | 14.11.1991 | (Supplementary) European search report - dispatched on: | EP | 22.02.1993 | Classification | IPC: | H01L45/00, H01L27/02, H01L29/04, H01L23/48, H01L21/44, H01L21/265 | [1993/07] | CPC: |
H01L23/53271 (EP);
H01L21/76889 (EP);
H01L21/76895 (EP);
H01L2924/0002 (EP)
| C-Set: |
H01L2924/0002, H01L2924/00 (EP)
| Designated contracting states | AT, CH, DE, FR, GB, LI, NL [1993/07] | Title | German: | LOKALE VERBINDUNGEN HOHER DICHTE IN EINER HALBLEITERSCHALTUNG UNTER VERWENDUNG VON METALLSILICIDEN | [1993/07] | English: | HIGH DENSITY LOCAL INTERCONNECT IN A SEMICONDUCTOR CIRCUIT USING METAL SILICIDE | [1993/07] | French: | INTERCONNEXION LOCALE A HAUTE DENSITE DANS UN CIRCUIT A SEMICONDUCTEURS OBTENUE AU MOYEN D'UN SILICIURE DE METAL | [1993/07] | File destroyed: | 03.03.2001 | Entry into regional phase | 30.11.1992 | National basic fee paid | 30.11.1992 | Search fee paid | 30.11.1992 | Designation fee(s) paid | 30.11.1992 | Examination fee paid | Examination procedure | 04.06.1991 | Request for preliminary examination filed International Preliminary Examining Authority: DE | 01.12.1992 | Examination requested [1993/07] | 27.05.1994 | Despatch of a communication from the examining division (Time limit: M06) | 07.12.1994 | Application deemed to be withdrawn, date of legal effect [1995/23] | 09.01.1995 | Despatch of communication that the application is deemed to be withdrawn, reason: reply to the communication from the examining division not received in time [1995/23] | Fees paid | Renewal fee | 27.05.1993 | Renewal fee patent year 03 | 18.03.1994 | Renewal fee patent year 04 | Penalty fee | Additional fee for renewal fee | 30.04.1993 | 03 M06 Fee paid on 27.05.1993 |
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| Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Documents cited: | Search | [A]EP0163132 (TOSHIBA KK [JP]) | International search | [YP]US4951117 (KASAI NAOKI [JP]); | [Y]US4873204 (WONG SIU-WENG S [US], et al); | [Y]US4679310 (RAMACHANDRA GOVARDHAN [US], et al); | [Y]US4549914 (OH KYE H [US]) |