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Extract from the Register of European Patents

EP About this file: EP0536227

EP0536227 - PROCESS FOR MANUFACTURING PMOS-TRANSISTORS AND PMOS-TRANSISTORS THUS PRODUCED [Right-click to bookmark this link]
StatusNo opposition filed within time limit
Status updated on  22.07.1995
Database last updated on 14.09.2024
Most recent event   Tooltip03.05.2002Lapse of the patent in a contracting statepublished on 19.06.2002  [2002/25]
Applicant(s)For all designated states
EL-MOS ELEKTRONIK IN MOS-TECHNOLOGIE GmbH
Emil-Figge-Strasse 81
D-44227 Dortmund / DE
[1993/15]
Inventor(s)01 / ROTH, Walter
Am Oelspeler Dorney 2
D-4600 Dortmund 1 / DE
[1993/15]
Representative(s)dompatent von Kreisler Selting Werner - Partnerschaft von Patent- und Rechtsanwälten mbB
Deichmannhaus am Dom
Bahnhofsvorplatz 1
50667 Köln / DE
[N/P]
Former [1993/15]Dallmeyer, Georg, et al
Patentanwälte von Kreisler-Selting-Werner Postfach 10 22 41
D-50462 Köln / DE
Application number, filing date91911911.522.06.1991
[1993/15]
WO1991EP01157
Priority number, dateDE1990402007623.06.1990         Original published format: DE 4020076
[1993/15]
Filing languageDE
Procedural languageDE
PublicationType: A1 Application with search report
No.:WO9200608
Date:09.01.1992
Language:DE
[1992/02]
Type: A1 Application with search report 
No.:EP0536227
Date:14.04.1993
Language:DE
The application published by WIPO in one of the EPO official languages on 09.01.1992 takes the place of the publication of the European patent application.
[1993/15]
Type: B1 Patent specification 
No.:EP0536227
Date:21.09.1994
Language:DE
[1994/38]
Search report(s)International search report - published on:EP09.01.1992
ClassificationIPC:H01L29/784, H01L21/266, H01L21/336
[1993/15]
CPC:
H01L21/266 (EP); H01L29/66659 (EP); H01L29/7835 (EP)
Designated contracting statesCH,   DE,   ES,   FR,   GB,   IT,   LI [1993/15]
TitleGerman:VERFAHREN ZUR HERSTELLUNG EINES PMOS-TRANSISTORS, SOWIE PMOS-TRANSISTOR[1993/15]
English:PROCESS FOR MANUFACTURING PMOS-TRANSISTORS AND PMOS-TRANSISTORS THUS PRODUCED[1993/15]
French:PROCEDE DE FABRICATION DE TRANSISTORS M.O.S. POSITIFS ET TRANSISTORS M.O.S. POSITIFS AINSI PRODUITS[1993/15]
Entry into regional phase21.11.1992National basic fee paid 
21.11.1992Designation fee(s) paid 
21.11.1992Examination fee paid 
Examination procedure21.01.1992Request for preliminary examination filed
International Preliminary Examining Authority: DE
21.11.1992Examination requested  [1993/15]
16.12.1992Request for accelerated examination filed
08.12.1993Despatch of communication of intention to grant (Approval: Yes)
08.12.1993Decision about request for accelerated examination - accepted: Yes
21.03.1994Communication of intention to grant the patent
12.06.1994Fee for grant paid
12.06.1994Fee for publishing/printing paid
Opposition(s)22.06.1995No opposition filed within time limit [1995/37]
Fees paidRenewal fee
26.06.1993Renewal fee patent year 03
28.06.1994Renewal fee patent year 04
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Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court.
Lapses during opposition  TooltipES21.09.1994
[2002/25]
Cited inInternational search[Y]JP62245675  ;
 [X]DE2636214  (IBM);
 [X]FR2216676  (HITACHI LTD [JP]);
 [A]FR2331884  (PHILIPS NV [NL])
 [Y]  - PATENT ABSTRACTS OF JAPAN vol. 12, no. 115 (E-599)12. April 1988 & JP,A,62 245 675 ( CITIZEN WATCH CO LTD ) 26. Oktober 1987 siehe Zusammenfassung, & JP62245675 A 00000000
 [A]  - IBM TECHNICAL DISCLOSURE BULLETIN. Bd. 26, Nr. 6, November 1983, NEW YORK US Seiten 2682 - 2683; D.A. BADAMI ET AL.: 'Tapered photoresist for a doping profile' siehe das ganze Dokument
The EPO accepts no responsibility for the accuracy of data originating from other authorities; in particular, it does not guarantee that it is complete, up to date or fit for specific purposes.